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公开(公告)号：US20100128576A1
公开(公告)日：2010-05-27
申请号：US12275980
申请日：2008-11-21
IPC分类号： G11B11/00
CPC分类号： G11B5/314 , G11B5/455 , G11B5/6088 , G11B7/122 , G11B7/127 , G11B7/1387 , G11B11/10536 , G11B11/1058 , G11B2005/0005 , G11B2005/001 , G11B2005/0021
摘要： Apparatuses and methods for making and using laser-assisted magnetic recording devices. A slider for use in a magnetic recording apparatus in accordance with one or more embodiments of the present invention comprises a magnetic recording element having a first pole and a second pole, a magnetic reader, and a laser resonator integrally formed on said slider, having an optical emission point of said resonator positioned between the first pole and the second pole of the magnetic recording element; wherein the laser resonator comprises a semiconductor gain media positioned between a first reflector and a near field optical element having a nonzero optical reflection to the semiconductor gain media.
摘要翻译： 用于制造和使用激光辅助磁记录装置的装置和方法。 根据本发明的一个或多个实施例的用于磁记录装置的滑动件包括具有第一极和第二极的磁记录元件，磁读取器和整体地形成在所述滑块上的激光谐振器，具有 所述谐振器的光发射点位于磁记录元件的第一极和第二极之间; 其中激光谐振器包括位于第一反射器和具有对半导体增益介质的非零光学反射的近场光学元件之间的半导体增益介质。
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公开(公告)号：US08380033B1
公开(公告)日：2013-02-19
申请号：US13450328
申请日：2012-04-18
IPC分类号： G02B6/10
CPC分类号： H01S5/021 , H01S5/0218 , H01S5/22 , H01S5/3095 , H01S5/3211 , H01S2301/176
摘要： Embodiments of the invention relate to an electro-optic device comprising a first region of silicon semiconductor material and a second region of III-V semiconductor material. A waveguide of the optical device is formed in part by a ridge in the second region. An optical mode of the waveguide is laterally confined by the ridge of the second region and vertically confined by a vertical boundary included in the first region. The ridge structure further serves as a current confinement structure over the active region of the electro-optic device, eliminating the need for implantation or other structures that are known to present reliability problems during manufacturing. The lack of “voids” and implants in electro-optic devices according to embodiments of the invention leads to better device reliability, process repeatability and improved mechanical strength.
摘要翻译： 本发明的实施例涉及包括硅半导体材料的第一区域和III-V半导体材料的第二区域的电光器件。 光学器件的波导部分地由第二区域中的脊形成。 波导的光学模式由第二区域的脊横向限制，并且由包括在第一区域中的垂直边界垂直限制。 脊结构还用作电光器件的有源区域上的电流限制结构，消除了在制造期间已知可能出现可靠性问题的植入或其他结构的需要。 在根据本发明的实施例的电光装置中缺少空隙和植入物导致更好的装置可靠性，工艺重复性和改进的机械强度。
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公开(公告)号：US08781283B1
公开(公告)日：2014-07-15
申请号：US13745320
申请日：2013-01-18
IPC分类号： G02B6/10
CPC分类号： H01S5/021 , H01S5/0218 , H01S5/22 , H01S5/3095 , H01S5/3211 , H01S2301/176
摘要： Embodiments of the invention relate to an electro-optic device comprising a first region of silicon semiconductor material and a second region of III-V semiconductor material. A waveguide of the optical device is formed in part by a ridge in the second region. An optical mode of the waveguide is laterally confined by the ridge of the second region and vertically confined by a vertical boundary included in the first region. The ridge structure further serves as a current confinement structure over the active region of the electro-optic device, eliminating the need for implantation or other structures that are known to present reliability problems during manufacturing. The lack of “voids” and implants in electro-optic devices according to embodiments of the invention leads to better device reliability, process repeatability and improved mechanical strength.
摘要翻译： 本发明的实施例涉及包括硅半导体材料的第一区域和III-V半导体材料的第二区域的电光器件。 光学器件的波导部分地由第二区域中的脊形成。 波导的光学模式由第二区域的脊横向限制，并且由包括在第一区域中的垂直边界垂直限制。 脊结构还用作电光器件的有源区域上的电流限制结构，消除了在制造期间已知可能出现可靠性问题的植入或其他结构的需要。 根据本发明的实施例，电光装置中缺少“空隙”和植入物导致更好的装置可靠性，工艺重复性和改进的机械强度。
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公开(公告)号：US20120114001A1
公开(公告)日：2012-05-10
申请号：US12943743
申请日：2010-11-10
IPC分类号： H01S5/323
CPC分类号： H01S5/021 , H01S5/0218 , H01S5/22 , H01S5/3095 , H01S5/3211 , H01S2301/176
摘要： Embodiments of the invention relate to an electro-optic device comprising a first region of silicon semiconductor material and a second region of III-V semiconductor material. A waveguide of the optical device is formed in part by a ridge in the second region. An optical mode of the waveguide is laterally confined by the ridge of the second region and vertically confined by a vertical boundary included in the first region. The ridge structure further serves as a current confinement structure over the active region of the electro-optic device, eliminating the need for implantation or other structures that are known to present reliability problems during manufacturing. The lack of “voids” and implants in electro-optic devices according to embodiments of the invention leads to better device reliability, process repeatability and improved mechanical strength.
摘要翻译： 本发明的实施例涉及包括硅半导体材料的第一区域和III-V半导体材料的第二区域的电光器件。 光学器件的波导部分地由第二区域中的脊形成。 波导的光学模式由第二区域的脊横向限制，并且由包括在第一区域中的垂直边界垂直限制。 脊结构还用作电光器件的有源区域上的电流限制结构，消除了在制造期间已知可能出现可靠性问题的植入或其他结构的需要。 根据本发明的实施例，电光装置中缺少“空隙”和植入物导致更好的装置可靠性，工艺重复性和改进的机械强度。
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公开(公告)号：US08559478B2
公开(公告)日：2013-10-15
申请号：US12355628
申请日：2009-01-16
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/021 , H01S5/0215 , H01S5/0217 , H01S5/026 , H01S5/06256 , H01S5/1014 , H01S5/1032 , H01S5/1209 , H01S5/3414
摘要： Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.
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6.发明申请公开(公告)号：US20090245298A1
公开(公告)日：2009-10-01
申请号：US12355628
申请日：2009-01-16
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/021 , H01S5/0215 , H01S5/0217 , H01S5/026 , H01S5/06256 , H01S5/1014 , H01S5/1032 , H01S5/1209 , H01S5/3414
摘要： Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.
摘要翻译： 公开了硅上的光子集成电路。 通过将作为有源区的化合物半导体材料的晶片结合到硅并去除衬底，可以使用硅衬底上的标准光刻技术来处理激光器，放大器，调制器和其它器件。 根据本发明的一个或多个实施例的硅激光器混合集成器件包括绝缘体上硅衬底，其包括顶表面中的至少一个波导，以及包括增益层的化合物半导体衬底，化合物半导体衬底 进行量子阱混合处理，其中化合物半导体衬底的上表面结合到绝缘体上硅衬底的顶表面上。
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公开(公告)号：US20130195137A1
公开(公告)日：2013-08-01
申请号：US13838932
申请日：2013-03-15
申请人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
发明人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
CPC分类号： H01S5/30 , G02B2006/12121 , H01S5/021 , H01S5/026 , H01S5/0424 , H01S5/0425 , H01S5/1032 , H01S5/125 , H01S5/141 , H01S5/2214 , H01S5/223 , H01S5/34
摘要： Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.
摘要翻译： 一种方法的实施方案包括用设置在硅中的光波导引导光学模式，与光波导和有源半导体材料重叠，该有源半导体材料通过光波导引导而光学耦合到光波导，将活性半导体材料电泵送到 注入引导通过有源半导体材料并通过光学模式的电流，并响应于注入的电流产生有源半导体材料中的光。 公开和要求保护其他实施例。
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公开(公告)号：US08767792B2
公开(公告)日：2014-07-01
申请号：US13838932
申请日：2013-03-15
申请人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
发明人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
CPC分类号： H01S5/30 , G02B2006/12121 , H01S5/021 , H01S5/026 , H01S5/0424 , H01S5/0425 , H01S5/1032 , H01S5/125 , H01S5/141 , H01S5/2214 , H01S5/223 , H01S5/34
摘要： Embodiments of a method comprising guiding an optical mode with an optical waveguide disposed in silicon, overlapping both the optical waveguide and an active semiconductor material evanescently coupled to the optical waveguide with the optical mode guided through the optical waveguide, electrically pumping the active semiconductor material to inject current directed through the active semiconductor material and through the optical mode, and generating light in the active semiconductor material in response to the injected current. Other embodiments are disclosed and claimed.
摘要翻译： 一种方法的实施方案包括用设置在硅中的光波导引导光学模式，与光波导和有源半导体材料重叠，该有源半导体材料通过光波导引导而光学耦合到光波导，将活性半导体材料电泵送到 注入引导通过有源半导体材料并通过光学模式的电流，并响应于注入的电流产生有源半导体材料中的光。 公开和要求保护其他实施例。
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公开(公告)号：US20080002929A1
公开(公告)日：2008-01-03
申请号：US11479459
申请日：2006-06-30
申请人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
发明人： John E. Bowers , Oded Cohen , Alexander W. Fang , Richard Jones , Mario J. Paniccia , Hyundai Park
CPC分类号： H01S5/30 , G02B2006/12121 , H01S5/021 , H01S5/026 , H01S5/0424 , H01S5/0425 , H01S5/1032 , H01S5/125 , H01S5/141 , H01S5/2214 , H01S5/223 , H01S5/34
摘要： An apparatus and method electrically pumping a hybrid evanescent laser. For one example, an apparatus includes an optical waveguide disposed in silicon. An active semiconductor material is disposed over the optical waveguide defining an evanescent coupling interface between the optical waveguide and the active semiconductor material such that an optical mode to be guided by the optical waveguide overlaps both the optical waveguide and the active semiconductor material. A current injection path is defined through the active semiconductor material and at least partially overlapping the optical mode such that light is generated in response to electrical pumping of the active semiconductor material in response to current injection along the current injection path at least partially overlapping the optical mode.
摘要翻译： 一种电泵浦混合ev逝激光的装置和方法。 作为一个示例，设备包括设置在硅中的光波导。 有源半导体材料设置在光波导上，限定光波导和有源半导体材料之间的渐逝耦合接口，使得由光波导引导的光学模式与光波导和有源半导体材料重叠。 通过有源半导体材料限定电流注入路径，并且至少部分地与光学模式重叠，使得响应于沿着沿着电流注入路径的电流注入而响应于有源半导体材料的电泵浦产生光而至少部分地与光学 模式。
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公开(公告)号：US20170141536A1
公开(公告)日：2017-05-18
申请号：US15416434
申请日：2017-01-26
CPC分类号： H01S5/068 , H01S3/0014 , H01S3/0637 , H01S3/0675 , H01S3/10015 , H01S3/10023 , H01S3/1003 , H01S3/1055 , H01S3/1305 , H01S5/021 , H01S5/02453 , H01S5/026 , H01S5/0265 , H01S5/0612 , H01S5/1028 , H01S5/1209 , H01S5/142
摘要： In the prior art, tunable lasers utilizing silicon-based tunable ring filters and III-V semiconductor-based gain regions required the heterogeneous integration of independently formed silicon and III-V semiconductor based optical elements, resulting in large optical devices requiring a complex manufacturing process (e.g., airtight packaging to couple the devices formed on different substrates, precise alignment for the elements, etc.). Embodiments of the invention eliminate the need for bulk optical elements and hermetic packaging, via the use of hybridized III-V/silicon gain regions and silicon optical components, such as silicon wavelength filters and stabilized wavelength references, thereby reducing the size and manufacturing complexity of tunable lasing devices.
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