摘要:
An inorganic material is described, which consists of at least two elementary spherical particles, each one of said spherical particles comprising metallic nanoparticles of size ranging between 1 and 300 nm and a mesostructured matrix based on an oxide of at least one element X selected from the group made up of silicon, aluminium, titanium, tungsten, zirconium, gallium, germanium, tin, antimony, lead, vanadium, iron, manganese, hafnium, niobium, tantalum, yttrium, cerium, gadolinium, europium and neodymium, and the mixture of at least two of these elements, said mesostructured matrix having a pore diameter ranging between 1.5 and 30 nm and having amorphous walls of thickness ranging between 1 and 30 nm, said elementary spherical particles having a diameter D greater than 10 μm and less than or equal to 100 μm. Said material can also contain zeolite nanocrystals trapped within said mesostructured matrix.
摘要:
An inorganic material is described, which consists of at least two elementary spherical particles, each one of said spherical particles comprising metallic nanoparticles of size ranging between 1 and 300 nm and a mesostructured matrix based on an oxide of at least one element X selected from the group made up of silicon, aluminum, titanium, tungsten, zirconium, gallium, germanium, tin, antimony, lead, vanadium, iron, manganese, hafnium, niobium, tantalum, yttrium, cerium, gadolinium, europium and neodymium, and the mixture of at least two of these elements, said mesostructured matrix having a pore diameter ranging between 1.5 and 30 nm and having amorphous walls of thickness ranging between 1 and 30 nm, said elementary spherical particles having a diameter D greater than 10 μm and less than or equal to 100 μm. Said material can also contain zeolite nanocrystals trapped within said mesostructured matrix.
摘要:
A mesostructured aluminosilicate material is described, which consists of at least two elementary spherical particles, each one of said spherical particles consisting of a matrix based on silicon oxide and aluminium oxide, said matrix having a pore diameter ranging between 1.5 and 30 nm, a Si/Al molar ratio at least equal to 1 and amorphous walls of thickness ranging between 1 and 30 nm, said elementary spherical particles having a diameter D such that 10
摘要:
A mesostructured material is described, which consists of at least two elementary spherical particles, each one of said particles comprising a mesostructured matrix based on aluminium oxide, said matrix having a pore diameter ranging between 1.5 and 30 nm, and an aluminium oxide content representing more than 46 wt. % of the mass of said matrix, which has amorphous walls of thickness ranging between 1 and 30 nm, said elementary spherical particles having a diameter D greater than 10 μm and less than or equal to 100 μm (10
摘要:
A mesostructured aluminosilicate material is described, which consists of at least two elementary spherical particles, each one of said spherical particles consisting of a matrix based on silicon oxide and aluminium oxide, said matrix having a pore diameter ranging between 1.5 and 30 nm, a Si/Al molar ratio at least equal to 1 and amorphous walls of thickness ranging between 1 and 30 nm, said elementary spherical particles having a diameter D such that 10
摘要:
A mesostructured material is described, which consists of at least two elementary spherical particles, each one of said particles comprising a mesostructured matrix based on aluminium oxide, said matrix having a pore diameter ranging between 1.5 and 30 nm, and an aluminium oxide content representing more than 46 wt. % of the mass of said matrix, which has amorphous walls of thickness ranging between 1 and 30 nm, said elementary spherical particles having a diameter D greater than 10 μm and less than or equal to 100 μm (10
摘要:
The invention relates to a method for securing the execution of an onboard NFC application in a secure element which does not include a native OTA application. The secure element interacts with a mobile terminal including a removable card. According to the invention, the method includes recording an identifier of the removable card in the secure element no later than when the NFC application is loaded onto the secure element. When an event occurs, a verification is made, in the secure element, whether or not the identifier of the removable card present in the mobile terminal corresponds to the identifier previously stored in the secure element, in order to detect a possible change of the removable card.
摘要:
According to the method,drops of an adhesive material are deposited on one of the plates, with the drops being spaced from one another.A grid having a predefined thickness lower than that of the drops is applied to the plate receiving the drops.A perpendicular and uniform pressure is applied to at least one of the plates, so that the drops (3) spread and come into contact with the opposing sides of the two plates.The spacing of the drops is defined so that after spreading under the pressure applied, air is not trapped between the drops.
摘要:
The metal alloy based on aluminium and titanium includes an aluminium content between 80 and 90 atomic percent and a titanium content between 10 and 20 atomic percent. The alloy is microcrystalline and outside thermodynamic equilibrium, the alloy is thereby resistant to oxidation and corrosion and has at the same time remarkable adhesion to polymer materials. The metal alloy can be in the form of a reflecting coating of a thickness ranging between 0.01 and 3 &mgr;m, covered with a protective film of a polymer material. A mirror having specular reflectivity not less than about 65%, good resistance to corrosion and oxidation includes a substrate of a polymer material supporting the reflecting coating.
摘要:
To reduce the risks of erroneous data writing into an electrically erasable and programmable non-volatile memory (10) (EEPROM) when a failure in the memory (10) voltage supply (Vcc) occurs during a programming or erasing operation, the memory (10) comprising means (30) of generating programming or erasing high voltage (Vpp), means (SW.sub.i, TI.sub.i,) are provided for maintaining the high voltage (Vpp) supply to the cells (C.sub.i,j) of the memory and capacity (Chv, CR.sub.2) of sufficient power to maintain the high voltage (Vpp) during the time required for the programming or erasing operation. The invention is useful particularly for EEPROM memories mounted on chip cards and electronic labels.