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公开(公告)号：US20080090401A1
公开(公告)日：2008-04-17
申请号：US11581969
申请日：2006-10-17
IPC分类号： H01L21/44
CPC分类号： H01Q15/0006 , H01Q15/0013 , Y10S977/742 , Y10S977/936 , Y10S977/948
摘要： An apparatus has multiple sets of independently addressable interdigitated nanowires. Nanowires of a set are in electrical communication with other nanowires of the same set and are electrically isolated from nanowires of other sets.
摘要翻译： 一种装置具有多组独立可寻址的交叉指示的纳米线。 一组的纳米线与相同组的其它纳米线电连通，并与其他组的纳米线电隔离。
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公开(公告)号：US07608905B2
公开(公告)日：2009-10-27
申请号：US11581969
申请日：2006-10-17
IPC分类号： H01L21/4763
CPC分类号： H01Q15/0006 , H01Q15/0013 , Y10S977/742 , Y10S977/936 , Y10S977/948
摘要： An apparatus has multiple sets of independently addressable interdigitated nanowires. Nanowires of a set are in electrical communication with other nanowires of the same set and are electrically isolated from nanowires of other sets.
摘要翻译： 一种装置具有多组独立可寻址的交叉指示的纳米线。 一组的纳米线与相同组的其它纳米线电连通，并与其他组的纳米线电隔离。
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公开(公告)号：US20120223286A1
公开(公告)日：2012-09-06
申请号：US13259173
申请日：2009-07-30
IPC分类号： H01L45/00
CPC分类号： H01L29/417 , B82Y10/00 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
摘要翻译： 构造纳米级开关器件，使得不需要电铸工艺来调节器件以进行正常的开关操作。 开关装置具有设置在两个电极之间的有源区域。 有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层，以及由掺杂剂源材料形成的至少一个导电层，所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。 开关层的厚度为6nm以下。
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4.发明授权公开(公告)号：US07561320B2
公开(公告)日：2009-07-14
申请号：US11977886
申请日：2007-10-26
CPC分类号： G03H1/02 , G02F2202/30 , G03H1/0005 , G03H1/2294 , G03H2001/0224 , G03H2225/12 , G03H2225/22 , H01L27/2463 , H01L45/04 , H01L45/085 , H01L45/1213 , H01L45/1233 , H01L45/14 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/147
摘要： An apparatus and related methods for modulating an electromagnetic radiation beam are described. A composite material is positioned in the path of the radiation beam, the composite material comprising a plurality of commonly oriented metallic first lines spaced apart by less than a wavelength of the radiation beam and a plurality of commonly oriented metallic second lines also spaced apart by less than that wavelength. The second lines are positioned in a crossing arrangement with the first lines, a crosspoint location being defined where each first line crosses each second line. An electrically programmable impedance memory element is positioned at each crosspoint location and is electrically coupled between the first and second lines corresponding to that crosspoint location, each impedance memory element having an electrically programmed state. The composite material modulates the radiation beam according to the electrically programmed states of the impedance memory elements.
摘要翻译： 描述了用于调制电磁辐射束的装置和相关方法。 复合材料定位在辐射束的路径中，复合材料包括多个共同定向的金属第一线，其间隔开小于辐射束的波长，以及多个共同定向的金属第二线，其间隔开较少 比那个波长。 第二行定位成与第一行的交叉排列，交叉点位置被定义为每个第一行与每个第二行交叉的位置。 电可编程阻抗存储元件位于每个交叉点位置处，并且电耦合在对应于该交叉点位置的第一和第二线之间，每个阻抗存储元件具有电编程状态。 复合材料根据阻抗存储器元件的电编程状态来调制辐射束。
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公开(公告)号：US20120122394A1
公开(公告)日：2012-05-17
申请号：US13386364
申请日：2010-01-29
IPC分类号： H04B7/24
摘要： Apparatus and systems are provided for data signaling between a centralized transceiver and a plurality of sensor nodes. Each sensor node independently generates electrical power from one or more renewable sources. Each sensor node transmits data corresponding to sensed physical variables to the transceiver by free-space signaling. Large areas can be monitored by a vast array of such sensors without the need for wiring, optical fibers or other tangible interconnections.
摘要翻译： 为集中收发器和多个传感器节点之间的数据信号提供装置和系统。 每个传感器节点独立地从一个或多个可再生能源产生电力。 每个传感器节点通过自由空间信令将与检测到的物理变量相对应的数据发送到收发器。 可以通过大量这样的传感器来监视大面积的区域，而不需要布线，光纤或其它有形互连。
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公开(公告)号：US08546898B2
公开(公告)日：2013-10-01
申请号：US13259196
申请日：2009-09-29
CPC分类号： H01L27/14609 , G11C7/005 , G11C13/0007 , G11C13/0014 , G11C13/047 , G11C2213/55 , G11C2213/56 , G11C2213/77 , H01L27/14621 , H01L27/307
摘要： An optoelectronic memory cell has a transparent top electrode, a photoactive layer, a latching layer, and a bottom electrode. The photoactive layer absorbs photons transmitted through the top electrode and generates charge carriers. During light exposure, the latching layer changes its resistance under an applied electric field in response to the generation of charge carriers in the photoactive layer.
摘要翻译： 光电存储单元具有透明的顶电极，光敏层，闭锁层和底电极。 光活性层吸收通过顶部电极传输的光子并产生电荷载体。 在曝光期间，响应于光活性层中的电荷载体的产生，锁存层在施加的电场下改变其电阻。
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公开(公告)号：US08519372B2
公开(公告)日：2013-08-27
申请号：US13259173
申请日：2009-07-30
IPC分类号： H01L29/02
CPC分类号： H01L29/417 , B82Y10/00 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
摘要翻译： 构造纳米级开关器件，使得不需要电铸工艺来调节器件以进行正常的开关操作。 开关装置具有设置在两个电极之间的有源区域。 有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层，以及由掺杂剂源材料形成的至少一个导电层，所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。 开关层的厚度为6nm以下。
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公开(公告)号：US20120039114A1
公开(公告)日：2012-02-16
申请号：US13256245
申请日：2009-06-18
IPC分类号： G11C11/24
CPC分类号： G11C11/24 , G11C13/0002 , H01G4/1272 , H01G4/255 , H01G4/33 , H01L27/101 , H01L28/40
摘要： A memcapacitor device (100) includes a first electrode (104) and a second electrode (106) and a memcapacitive matrix (102) interposed between the first electrode (104) and the second electrode (106). Mobile dopants (111) are contained within the memcapacitive matrix (102) and are repositioned within the memcapacitive matrix (102) by the application of a programming voltage (126) across the first electrode (104) and second electrode (106) to alter the capacitance of the memcapacitor (100). A method for utilizing a memcapacitive device (100) includes applying a programming voltage (126) across a memcapacitive matrix (102) such that mobile ions (111) contained within a memcapacitive matrix (102) are redistributed and alter a capacitance of the memcapacitive device (100), then removing the programming voltage (126) and applying a reading voltage to sense the capacitance of the memcapacitive device (100).
摘要翻译： 电容器装置（100）包括插入在第一电极（104）和第二电极（106）之间的第一电极（104）和第二电极（106）和存储电容矩阵（102）。 移动掺杂剂（111）被包含在存储器电容矩阵（102）内，并且通过跨越第一电极（104）和第二电极（106）施加编程电压（126）而重新定位在存储电容矩阵（102）内，以改变 电容器（100）的电容。 一种利用存储电容器件（100）的方法包括跨越存储电容矩阵（102）应用编程电压（126），使得包含在存储电容矩阵（102）内的移动离子（111）被重新分配并改变存储器件的电容 （100），然后去除所述编程电压（126）并施加读取电压以感测所述存储器件（100）的电容。
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公开(公告)号：US20110182108A1
公开(公告)日：2011-07-28
申请号：US13120905
申请日：2008-12-23
CPC分类号： H01L27/2463 , G11C13/02 , G11C2213/11 , H01L45/08 , H01L45/085 , H01L45/14 , H01L45/142 , H01L45/143 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/165 , H01L45/1658
摘要： A memristive device is disclosed herein. The device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. At least two mobile species are present in the active region. Each of the at least two mobile species is configured to define a separate state variable of the memristive device.
摘要翻译： 本文公开了忆阻装置。 该器件包括第一电极，第二电极和设置在第一和第二电极之间的有源区。 活性区域中至少有两种移动物种。 所述至少两个移动物种中的每一个被配置为限定所述忆阻器件的单独状态变量。
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公开(公告)号：US20120012810A1
公开(公告)日：2012-01-19
申请号：US13259196
申请日：2009-10-29
CPC分类号： H01L27/14609 , G11C7/005 , G11C13/0007 , G11C13/0014 , G11C13/047 , G11C2213/55 , G11C2213/56 , G11C2213/77 , H01L27/14621 , H01L27/307
摘要： An optoelectronic memory cell has a transparent top electrode, a photoactive layer, a latching layer, and a bottom electrode. The photoactive layer absorbs photons transmitted through the top electrode and generates charge carriers. During light exposure, the latching layer changes its resistance under an applied electric field in response to the generation of charge carriers in the photoactive layer.
摘要翻译： 光电存储单元具有透明的顶电极，光敏层，闭锁层和底电极。 光活性层吸收通过顶部电极传输的光子并产生电荷载体。 在曝光期间，响应于光活性层中的电荷载体的产生，锁存层在施加的电场下改变其电阻。
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