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公开(公告)号：US20120308933A1
公开(公告)日：2012-12-06
申请号：US13586475
申请日：2012-08-15
IPC分类号： G03F7/20
摘要： The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.
摘要翻译： 本发明涉及一种辐射敏感化合物，其包含接近化合物一端的表面结合基团，用于连接至底物，以及靠近化合物相对端的金属结合基团。 金属结合组不辐射敏感。 辐射敏感化合物还包括设置在表面结合基团和金属结合基团之间的主体部分和位于主体部分中或与金属结合基团相邻的辐射敏感组。 表面结合基团能够附着于选自金属，金属氧化物或半导体材料的基板。
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公开(公告)号：US07531293B2
公开(公告)日：2009-05-12
申请号：US11445326
申请日：2006-06-02
摘要： The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.
摘要翻译： 本发明涉及一种辐射敏感化合物，其包含接近化合物一端的表面结合基团，用于连接至底物，以及靠近化合物相对端的金属结合基团。 金属结合组不辐射敏感。 辐射敏感化合物还包括设置在表面结合基团和金属结合基团之间的主体部分和位于主体部分中或与金属结合基团相邻的辐射敏感组。 表面结合基团能够附着到选自金属，金属氧化物或半导体材料的基板上。
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公开(公告)号：US20070278179A1
公开(公告)日：2007-12-06
申请号：US11445326
申请日：2006-06-02
摘要： The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.
摘要翻译： 本发明涉及一种辐射敏感化合物，其包含接近化合物一端的表面结合基团，用于连接至底物，以及靠近化合物相对端的金属结合基团。 金属结合组不辐射敏感。 辐射敏感化合物还包括设置在表面结合基团和金属结合基团之间的主体部分和位于主体部分中或与金属结合基团相邻的辐射敏感组。 表面结合基团能够附着于选自金属，金属氧化物或半导体材料的基板。
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公开(公告)号：US08273886B2
公开(公告)日：2012-09-25
申请号：US12199607
申请日：2008-08-27
IPC分类号： C07F7/02 , C07F9/06 , C07F9/02 , C07D213/22
摘要： The invention is directed to a radiation sensitive compound comprising a surface binding group proximate to one end of the compound for attachment to a substrate, and a metal binding group proximate to an opposite end of the compound. The metal binding group is not radiation sensitive. The radiation sensitive compound also includes a body portion disposed between the surface binding group and the metal binding group, and a radiation sensitive group positioned in the body portion or adjacent to the metal binding group. The surface binding group is capable of attaching to a substrate selected from a metal, a metal oxide, or a semiconductor material.
摘要翻译： 本发明涉及一种辐射敏感化合物，其包含接近化合物一端的表面结合基团，用于连接至底物，以及靠近化合物相对端的金属结合基团。 金属结合组不辐射敏感。 辐射敏感化合物还包括设置在表面结合基团和金属结合基团之间的主体部分和位于主体部分中或与金属结合基团相邻的辐射敏感组。 表面结合基团能够附着于选自金属，金属氧化物或半导体材料的基板。
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5.发明申请FORMATION OF CARBON AND SEMICONDUCTOR NANOMATERIALS USING MOLECULAR ASSEMBLIES 有权使用分子组装法制备碳和半导体纳米材料公开(公告)号：US20110204318A1
公开(公告)日：2011-08-25
申请号：US12973063
申请日：2010-12-20
IPC分类号： H01L29/66
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/00 , C30B29/02 , C30B29/60 , H01L29/0673 , H01L29/0676 , H01L29/78681 , H01L29/78684 , Y10S977/762 , Y10S977/84 , Y10S977/89 , Y10S977/932 , Y10S977/936 , Y10S977/938
摘要： The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species. The metal-containing species is selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor. The metallized molecular precursor is then subjected to a heat treatment to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form. The heating of the metallized molecular precursor is conducted under conditions suitable for chemical vapor deposition of the carbon nanomaterials or semiconductor nanomaterials.
摘要翻译： 本发明涉及形成碳纳米材料或半导体纳米材料的方法。 该方法包括提供基底并将分子前体附着到基底上。 分子前体包括用于连接到底物的表面结合基团和用于附着含金属的物质的结合基团。 含金属的物质选自金属阳离子，金属化合物或金属或金属氧化物纳米颗粒，以形成金属化的分子前体。 然后对金属化分子前体进行热处理以提供形成碳纳米材料或半导体纳米材料的催化部位。 金属化分子前体的加热在适合于碳纳米材料或半导体纳米材料的化学气相沉积的条件下进行。
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6.发明授权公开(公告)号：US08138492B2
公开(公告)日：2012-03-20
申请号：US12973063
申请日：2010-12-20
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/00 , C30B29/02 , C30B29/60 , H01L29/0673 , H01L29/0676 , H01L29/78681 , H01L29/78684 , Y10S977/762 , Y10S977/84 , Y10S977/89 , Y10S977/932 , Y10S977/936 , Y10S977/938
摘要： The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species. The metal-containing species is selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor. The metallized molecular precursor is then subjected to a heat treatment to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form. The heating of the metallized molecular precursor is conducted under conditions suitable for chemical vapor deposition of the carbon nanomaterials or semiconductor nanomaterials.
摘要翻译： 本发明涉及形成碳纳米材料或半导体纳米材料的方法。 该方法包括提供基底并将分子前体附着到基底上。 分子前体包括用于连接到底物的表面结合基团和用于附着含金属的物质的结合基团。 含金属的物质选自金属阳离子，金属化合物或金属或金属氧化物纳米颗粒，以形成金属化的分子前体。 然后对金属化分子前体进行热处理以提供形成碳纳米材料或半导体纳米材料的催化部位。 金属化分子前体的加热在适于碳纳米材料或半导体纳米材料的化学气相沉积的条件下进行。
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7.发明授权公开(公告)号：US07855133B2
公开(公告)日：2010-12-21
申请号：US12199516
申请日：2008-08-27
IPC分类号： H01L21/4763 , H01L21/8232 , H01L21/336 , H01L21/28
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/00 , C30B29/02 , C30B29/60 , H01L29/0673 , H01L29/0676 , H01L29/78681 , H01L29/78684 , Y10S977/762 , Y10S977/84 , Y10S977/89 , Y10S977/932 , Y10S977/936 , Y10S977/938
摘要： The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species. The metal-containing species is selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor. The metallized molecular precursor is then subjected to a heat treatment to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form. The heating of the metallized molecular precursor is conducted under conditions suitable for chemical vapor deposition of the carbon nanomaterials or semiconductor nanomaterials.
摘要翻译： 本发明涉及形成碳纳米材料或半导体纳米材料的方法。 该方法包括提供基底并将分子前体附着到基底上。 分子前体包括用于连接到底物的表面结合基团和用于附着含金属的物质的结合基团。 含金属的物质选自金属阳离子，金属化合物或金属或金属氧化物纳米颗粒，以形成金属化的分子前体。 然后对金属化分子前体进行热处理以提供形成碳纳米材料或半导体纳米材料的催化部位。 金属化分子前体的加热在适于碳纳米材料或半导体纳米材料的化学气相沉积的条件下进行。
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8.发明授权公开(公告)号：US07544546B2
公开(公告)日：2009-06-09
申请号：US11433586
申请日：2006-05-15
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/00 , C30B29/02 , C30B29/60 , H01L29/0673 , H01L29/0676 , H01L29/78681 , H01L29/78684 , Y10S977/762 , Y10S977/84 , Y10S977/89 , Y10S977/932 , Y10S977/936 , Y10S977/938
摘要： The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species. The metal-containing species is selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor. The metallized molecular precursor is then subjected to a heat treatment to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form. The heating of the metallized molecular precursor is conducted under conditions suitable for chemical vapor deposition of the carbon nanomaterials or semiconductor nanomaterials.
摘要翻译： 本发明涉及形成碳纳米材料或半导体纳米材料的方法。 该方法包括提供基底并将分子前体附着到基底上。 分子前体包括用于连接到底物的表面结合基团和用于附着含金属的物质的结合基团。 含金属的物质选自金属阳离子，金属化合物或金属或金属氧化物纳米颗粒，以形成金属化的分子前体。 然后对金属化分子前体进行热处理以提供形成碳纳米材料或半导体纳米材料的催化部位。 金属化分子前体的加热在适于碳纳米材料或半导体纳米材料的化学气相沉积的条件下进行。
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9.发明申请FORMATION OF CARBON AND SEMICONDUCTOR NANOMATERIALS USING MOLECULAR ASSEMBLIES 有权使用分子组装法制备碳和半导体纳米材料公开(公告)号：US20090087972A1
公开(公告)日：2009-04-02
申请号：US12199516
申请日：2008-08-27
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/00 , C30B29/02 , C30B29/60 , H01L29/0673 , H01L29/0676 , H01L29/78681 , H01L29/78684 , Y10S977/762 , Y10S977/84 , Y10S977/89 , Y10S977/932 , Y10S977/936 , Y10S977/938
摘要： The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species. The metal-containing, species is selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor. The metallized molecular precursor is then subjected to a heat treatment to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form. The heating of the metallized molecular precursor is conducted under conditions suitable for chemical vapor deposition of the carbon nanomaterials or semiconductor nanomaterials.
摘要翻译： 本发明涉及形成碳纳米材料或半导体纳米材料的方法。 该方法包括提供基底并将分子前体附着到基底上。 分子前体包括用于连接到底物的表面结合基团和用于附着含金属的物质的结合基团。 含金属的物质选自金属阳离子，金属化合物或金属或金属氧化物纳米颗粒，以形成金属化的分子前体。 然后对金属化分子前体进行热处理以提供形成碳纳米材料或半导体纳米材料的催化部位。 金属化分子前体的加热在适于碳纳米材料或半导体纳米材料的化学气相沉积的条件下进行。
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10.发明授权Polymeric material, method of forming the polymeric material, and method of forming a thin film using the polymeric material 有权聚合材料，形成聚合物材料的方法以及使用聚合物材料形成薄膜的方法公开(公告)号：US07932128B2
公开(公告)日：2011-04-26
申请号：US11771854
申请日：2007-06-29
IPC分类号： H01L51/40
CPC分类号： H01L51/0508 , C08F12/22 , C08F12/26 , C08F12/30 , C08F112/32 , C09D125/18 , H01L51/004 , H01L51/0558 , C08F220/18 , C08F212/32
摘要： A method of forming a polymeric material with a pendant polycyclic aromatic compound precursor includes forming a polycyclic aromatic compound precursor (e.g., a pentacene precursor) including at least one polymerizable functionality, and polymerizing the polymerizable functionality to form the polymeric material with the pendant precursor.
摘要翻译： 用侧基多环芳族化合物前体形成聚合物材料的方法包括形成包含至少一种可聚合官能团的多环芳族化合物前体（如并五苯前体），并聚合可聚合官能团以形成具有侧挂前体的聚合物材料。
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