专利检索 ap:("Alistair Graeme Prince" OR "Richard John Sheffield Young" OR "Giovanna Laudisio" OR "Gary Coultart" OR "Kenneth Warren Hang" OR "Ben Whittle") AND inv:"Kenneth Warren Hang" 第 1 页

1.

发明授权
Process for the formation of a silver back electrode of a passivated emitter and rear contact silicon solar cell 有权
标题翻译：用于形成钝化发射极和后接触硅太阳能电池的银背电极的工艺

公开(公告)号：US09343194B2

公开(公告)日：2016-05-17

申请号：US12954039

申请日：2010-11-24

申请人： Alistair Graeme Prince , Richard John Sheffield Young , Giovanna Laudisio , Gary Coultart , Kenneth Warren Hang , Ben Whittle

发明人： Alistair Graeme Prince , Richard John Sheffield Young , Giovanna Laudisio , Gary Coultart , Kenneth Warren Hang , Ben Whittle

IPC分类号： H01L31/18 , H01L31/0224 , H01B1/22 , B22F7/04 , H01B1/16 , B22F7/08 , C03C8/12 , H01L31/0264 , B22F1/00 , C03C8/10

CPC分类号： H01B1/22 , B22F1/0059 , B22F1/007 , B22F7/04 , B22F7/08 , B22F2007/047 , C03C8/10 , C03C8/12 , H01B1/16 , H01L31/022425 , H01L31/0264 , H01L31/1884 , H01L2924/00 , H01L2924/0002 , Y02E10/50 , Y02E10/52

摘要： A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a silicon wafer having an ARC layer on its front-side and a perforated dielectric passivation layer on its back-side, (2) applying and drying a silver paste to form a silver back electrode pattern on the perforated dielectric passivation layer on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.

摘要翻译： 一种用于形成PERC硅太阳能电池的导电银背电极的方法，包括以下步骤：（1）在其前侧提供具有ARC层的硅晶片及其背面上的穿孔电介质钝化层，（2）在硅晶片的背面的有孔电介质钝化层上施加和干燥银膏以形成银背电极图案，（3）烧制干燥的银浆，由此晶片达到峰值温度 700至900℃，其中银浆没有或仅仅具有差的穿透能力，并且包括颗粒状银和有机载体。

2.

发明授权
Aluminum pastes and use thereof in the production of passivated emitter and rear contact silicon solar cells 有权
标题翻译：铝浆及其在生产钝化发射器和后接触硅太阳能电池中的应用

公开(公告)号：US08999203B2

公开(公告)日：2015-04-07

申请号：US12952694

申请日：2010-11-23

申请人： Alistair Graeme Prince , Richard John Sheffield Young , Giovanna Laudisio , Gary Coultart , Kenneth Warren Hang , Ben Whittle

发明人： Alistair Graeme Prince , Richard John Sheffield Young , Giovanna Laudisio , Gary Coultart , Kenneth Warren Hang , Ben Whittle

IPC分类号： H01B1/02 , H01B1/12 , H01B1/22 , H01L31/0224

CPC分类号： H01B1/22 , H01L31/022425 , Y02E10/50

摘要： An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.

摘要翻译： 一种包含微粒铝，有机载体和玻璃料的铝糊料，其选自（i）软化点温度在550-611℃范围内并含有11至33重量％SiO 2的无铅玻璃料， > 0〜7重量％的Al 2 O 3和2〜10重量％的B 2 O 3和（ii）软化点温度在571〜636℃范围内的含铅玻璃料，含有53〜57重量％的PbO，25〜29重量％的SiO 2，2〜6重量％的Al 2 O 3和6〜9重量％的B 2 O 3，可用于生产PERC硅太阳能电池的铝背电极。

3.

发明申请
PROCESS FOR THE FORMATION OF A SILVER BACK ELECTRODE OF A PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELL 有权
标题翻译：形成钝化发射体和后接触硅太阳能电池的银背电极的工艺

公开(公告)号：US20110120551A1

公开(公告)日：2011-05-26

申请号：US12954039

申请日：2010-11-24

申请人： Alistair Graeme Prince , Richard John Sheffield Young , Giovanna Laudisio , Gary Coultart , Kenneth Warren Hang , Ben Whittle

发明人： Alistair Graeme Prince , Richard John Sheffield Young , Giovanna Laudisio , Gary Coultart , Kenneth Warren Hang , Ben Whittle

IPC分类号： H01L31/0224 , H01L31/18

CPC分类号： H01B1/22 , B22F1/0059 , B22F1/007 , B22F7/04 , B22F7/08 , B22F2007/047 , C03C8/10 , C03C8/12 , H01B1/16 , H01L31/022425 , H01L31/0264 , H01L31/1884 , H01L2924/00 , H01L2924/0002 , Y02E10/50 , Y02E10/52

摘要： A process for the formation of an electrically conductive silver back electrode of a PERC silicon solar cell comprising the steps: (1) providing a silicon wafer having an ARC layer on its front-side and a perforated dielectric passivation layer on its back-side, (2) applying and drying a silver paste to form a silver back electrode pattern on the perforated dielectric passivation layer on the back-side of the silicon wafer, and (3) firing the dried silver paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the silver paste has no or only poor fire-through capability and comprises particulate silver and an organic vehicle.

摘要翻译： 一种用于形成PERC硅太阳能电池的导电银背电极的方法，包括以下步骤：（1）在其前侧提供具有ARC层的硅晶片及其背面上的穿孔电介质钝化层，（2）在硅晶片的背面的有孔电介质钝化层上施加和干燥银膏以形成银背电极图案，（3）烧制干燥的银浆，由此晶片达到峰值温度 700至900℃，其中银浆没有或仅仅具有差的穿透能力，并且包括颗粒状银和有机载体。

4.

发明申请
ALUMINUM PASTES AND USE THEREOF IN THE PRODUCTION OF PASSIVATED EMITTER AND REAR CONTACT SILICON SOLAR CELLS 有权
标题翻译：铝废料及其在生产无源发射器和后接硅硅太阳能电池中的应用

公开(公告)号：US20110120535A1

公开(公告)日：2011-05-26

申请号：US12952694

申请日：2010-11-23

申请人： Alistair Graeme Prince , Richard John Sheffield Young , Glovanna Laudisio , Gary Coultart , Kenneth Warren Hang , Ben Whittle

发明人： Alistair Graeme Prince , Richard John Sheffield Young , Glovanna Laudisio , Gary Coultart , Kenneth Warren Hang , Ben Whittle

IPC分类号： H01L31/02 , H01B1/12 , H01L31/18

CPC分类号： H01B1/22 , H01L31/022425 , Y02E10/50

摘要： An aluminum paste comprising particulate aluminum, an organic vehicle and glass frit selected from (i) lead-free glass frits with a softening point temperature in the range of 550 to 611° C. and containing 11 to 33 wt.-% of SiO2, >0 to 7 wt.-% of Al2O3 and 2 to 10 wt.-% of B2O3 and (ii) lead-containing glass frits with a softening point temperature in the range of 571 to 636° C. and containing 53 to 57 wt.-% of PbO, 25 to 29 wt.-% of SiO2, 2 to 6 wt.-% of Al2O3 and 6 to 9 wt.-% of B2O3, useful in the production of aluminum back electrodes of PERC silicon solar cells.

摘要翻译： 一种包含微粒铝，有机载体和玻璃料的铝糊料，其选自（i）软化点温度在550-611℃范围内并含有11至33重量％SiO 2的无铅玻璃料， > 0〜7重量％的Al 2 O 3和2〜10重量％的B 2 O 3和（ii）软化点温度在571〜636℃范围内的含铅玻璃料，含有53〜57重量％的PbO，25〜29重量％的SiO 2，2〜6重量％的Al 2 O 3和6〜9重量％的B 2 O 3，可用于生产PERC硅太阳能电池的铝背电极。

5.

发明授权
Process for the production of a MWT silicon solar cell 有权
标题翻译：生产MWT硅太阳能电池的工艺

公开(公告)号：US09054242B2

公开(公告)日：2015-06-09

申请号：US13022799

申请日：2011-02-08

申请人： Kenneth Warren Hang , Giovanna Laudisio , Alistair Graeme Prince , Richard John Sheffield Young

发明人： Kenneth Warren Hang , Giovanna Laudisio , Alistair Graeme Prince , Richard John Sheffield Young

IPC分类号： H01L31/0224 , H01L31/18 , C03C8/02 , C03C8/10 , C03C8/24

CPC分类号： H01L31/02245 , C03C8/02 , C03C8/10 , C03C8/24 , Y02E10/50

摘要： A process for the production of a MWT silicon solar cell comprising the steps: (1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) a p-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.

摘要翻译： 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供n型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） p型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥施加的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，其中导电性金属糊料没有或仅有差的穿透能力，并且包括（a ）至少一种选自银，铜和镍的颗粒状导电金属，（b）至少一种颗粒型p型掺杂剂，和（c）有机载体。

6.

发明申请
PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL 失效
标题翻译：制造MWT硅太阳能电池的方法

公开(公告)号：US20110139238A1

公开(公告)日：2011-06-16

申请号：US12963003

申请日：2010-12-08

申请人： Kenneth Warren Hang , Giovanna Laudisio , Alistair Graeme Prince , Richard John Sheffield Young

发明人： Kenneth Warren Hang , Giovanna Laudisio , Alistair Graeme Prince , Richard John Sheffield Young

IPC分类号： H01L31/02 , H01L31/18

CPC分类号： C03C8/02 , C03C8/12 , C03C8/16 , C03C8/18 , H01B1/22 , H01L31/02245 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S438/928

摘要： A process for the production of a MWT silicon solar cell comprising the steps: (1) providing a p-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) an n-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel and (b) an organic vehicle.

摘要翻译： 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供p型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） n型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥施加的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，其中导电性金属糊料没有或仅有差的穿透能力，并且包括（a ）至少一种选自银，铜和镍的颗粒状导电金属和（b）有机载体。

7.

发明授权
Process for the production of a MWT silicon solar cell 失效
标题翻译：生产MWT硅太阳能电池的工艺

公开(公告)号：US08227292B2

公开(公告)日：2012-07-24

申请号：US12963003

申请日：2010-12-08

申请人： Kenneth Warren Hang , Giovanna Laudisio , Alistair Graeme Prince , Richard John Sheffield Young

发明人： Kenneth Warren Hang , Giovanna Laudisio , Alistair Graeme Prince , Richard John Sheffield Young

IPC分类号： H01L21/00 , H01L21/50 , H01L21/48 , H01L21/44 , H01L21/4763

CPC分类号： C03C8/02 , C03C8/12 , C03C8/16 , C03C8/18 , H01B1/22 , H01L31/02245 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S438/928

摘要： A process for the production of a MWT silicon solar cell comprising the steps: (1) providing a p-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) an n-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel and (b) an organic vehicle.

摘要翻译： 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供p型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） n型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥施加的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，其中导电性金属糊料没有或仅有差的穿透能力，并且包括（a ）至少一种选自银，铜和镍的颗粒状导电金属和（b）有机载体。

8.

发明申请
PROCESS FOR THE PRODUCTION OF A MWT SILICON SOLAR CELL 有权
标题翻译：制造MWT硅太阳能电池的方法

公开(公告)号：US20110192456A1

公开(公告)日：2011-08-11

申请号：US13022799

申请日：2011-02-08

申请人： Kenneth Warren Hang , Giovanna Laudisio , Alistair Graeme Prince , Richard John Sheffield Young

发明人： Kenneth Warren Hang , Giovanna Laudisio , Alistair Graeme Prince , Richard John Sheffield Young

IPC分类号： H01L31/0224 , H01L31/18

CPC分类号： H01L31/02245 , C03C8/02 , C03C8/10 , C03C8/24 , Y02E10/50

摘要： A process for the production of a MWT silicon solar cell comprising the steps:(1) providing an n-type silicon wafer with (i) holes forming vias between the front-side and the back-side of the wafer and (ii) a p-type emitter extending over the entire front-side and the inside of the holes, (2) applying a conductive metal paste to the holes of the silicon wafer to provide at least the inside of the holes with a metallization, (3) drying the applied conductive metal paste, and (4) firing the dried conductive metal paste, whereby the wafer reaches a peak temperature of 700 to 900° C., wherein the conductive metal paste has no or only poor fire-through capability and comprises (a) at least one particulate electrically conductive metal selected from the group consisting of silver, copper and nickel, (b) at least one particulate p-type dopant, and (c) an organic vehicle.

摘要翻译： 一种用于生产MWT硅太阳能电池的方法，包括以下步骤：（1）提供n型硅晶片，其具有（i）在晶片的前侧和后侧之间形成通孔的孔，以及（ii） p型发射体在孔的整个前侧和内侧延伸，（2）将导电金属膏施加到硅晶片的孔中，至少提供孔的内部金属化，（3）干燥施加的导电性金属糊料，（4）烧制干燥后的导电性金属糊料，由此晶片达到700〜900℃的峰值温度，其中导电性金属糊料没有或仅有差的穿透能力，并且包括（a ）至少一种选自银，铜和镍的颗粒状导电金属，（b）至少一种颗粒型p型掺杂剂，和（c）有机载体。