Method for enhancing wafer alignment marks
    1.
    发明授权
    Method for enhancing wafer alignment marks 失效
    增强晶圆对准标记的方法

    公开(公告)号:US07588884B2

    公开(公告)日:2009-09-15

    申请号:US10857151

    申请日:2004-05-28

    IPC分类号: G03F1/00

    摘要: A method of enhancing alignment marks defined in a relatively thin layer on a wafer by etching the alignment marks into an underlying alignment mark transfer layer is described. The target area for the alignment marks is prepared by depositing material for the transfer layer. In alternative embodiments an oversized trench is formed in the target area prior to the deposition of the transfer layer. The alignment marks can fabricated in the layer(s) deposited by the existing process or alternatively, the original layers can be removed and replaced with a layer of material selected to have comparable etching properties (definition layer).

    摘要翻译: 描述了通过将对准标记蚀刻到下面的对准标记转印层中来增强在晶片上相对薄的层中限定的对准标记的方法。 通过沉积用于转印层的材料来制备对准标记的目标区域。 在替代实施例中,在沉积转移层之前,在目标区域中形成尺寸过大的沟槽。 对准标记可以在通过现有工艺沉积的层中制造,或者替代地,原始层可被移除并被选择为具有相当的蚀刻性质(定义层)的材料层替代。

    Method for enhancing wafer alignment marks
    2.
    发明申请
    Method for enhancing wafer alignment marks 失效
    增强晶圆对准标记的方法

    公开(公告)号:US20050266357A1

    公开(公告)日:2005-12-01

    申请号:US10857151

    申请日:2004-05-28

    IPC分类号: G03F7/00 G03F9/00

    摘要: A method of enhancing alignment marks defined in a relatively thin layer on a wafer by etching the alignment marks into an underlying alignment mark transfer layer is described. The target area for the alignment marks is prepared by depositing material for the transfer layer. In alternative embodiments an oversized trench is formed in the target area prior to the deposition of the transfer layer. The alignment marks can fabricated in the layer(s) deposited by the existing process or alternatively, the original layers can be removed and replaced with a layer of material selected to have comparable etching properties (definition layer).

    摘要翻译: 描述了通过将对准标记蚀刻到下面的对准标记转印层中来增强在晶片上相对薄的层中限定的对准标记的方法。 通过沉积用于转印层的材料来制备对准标记的目标区域。 在替代实施例中,在沉积转移层之前,在目标区域中形成尺寸过大的沟槽。 对准标记可以在通过现有工艺沉积的层中制造,或者替代地,原始层可被移除并被选择为具有相当的蚀刻性质(定义层)的材料层替代。

    Fenceless main pole definition for advanced perpendicular magnetic write head
    3.
    发明授权
    Fenceless main pole definition for advanced perpendicular magnetic write head 有权
    无极主极定义用于高级垂直磁头写入头

    公开(公告)号:US08568601B2

    公开(公告)日:2013-10-29

    申请号:US11947616

    申请日:2007-11-29

    IPC分类号: B44C1/22 H01L21/00

    CPC分类号: G03B31/00

    摘要: A method for manufacturing a magnetic write head for perpendicular magnetic recording. The method includes forming a write pole using a mask that includes a hard mask layer deposited over the write pole laminate material, and a thick, physically robust image transfer layer. The image transfer layer can be a material such as AlTiO that can be patterned by a reactive ion etching process, but which also resists deformation during processing. This process allows a write pole and wrap-around trailing shield to be constructed at very narrow track widths without the mask deformation and fencing problems experienced by prior art methods.

    摘要翻译: 一种用于制造用于垂直磁记录的磁写头的方法。 该方法包括使用掩模形成写入极,该掩模包括沉积在写磁极层压材料上的硬掩模层,以及厚的,物理上坚固的图像转印层。 图像转印层可以是诸如AlTiO的材料,其可以通过反应离子蚀刻工艺进行图案化,但也可以在加工过程中抵抗变形。 该过程允许在非常窄的轨道宽度上构造写极点和缠绕后挡板,而不会由现有技术方法遇到的掩模变形和围栏问题。

    Method for manufacturing a magnetic write head having a hard mask defined write pole trailing edge step
    5.
    发明授权
    Method for manufacturing a magnetic write head having a hard mask defined write pole trailing edge step 有权
    一种用于制造具有硬掩模定义的写磁极后缘步进的磁写头的方法

    公开(公告)号:US08252190B2

    公开(公告)日:2012-08-28

    申请号:US12343720

    申请日:2008-12-24

    IPC分类号: B44C1/22 G11B5/127 H04R31/00

    摘要: A method for manufacturing a magnetic write head having a write pole with a tapered trailing edge step. The resulting tapered trailing edge step maximizes write field at very small bit sizes by preventing the magnetic saturation of the write pole at the pole tip. The method includes depositing a magnetic write pole material and then depositing a magnetic material over the magnetic write pole material. A RIE mask and hard mask are deposited over the magnetic bump material. A resist mask is formed over the RIE mask and hard mask, and a reactive ion etching is performed to transfer the pattern of the resist mask onto the underlying hard mask. Then an ion milling is performed to form a the magnetic step layer with a tapered edge that defines a tapered trailing edge step structure of the write pole.

    摘要翻译: 一种用于制造具有具有锥形后缘台阶的写极的磁写头的方法。 所产生的锥形后沿步骤通过防止磁极尖端的写极的磁饱和而使非常小的位尺寸的写入场最大化。 该方法包括沉积磁性写入磁极材料,然后在磁性写入磁极材料上沉积磁性材料。 RIE掩模和硬掩模沉积在磁性凸块材料上。 在RIE掩模和硬掩模上形成抗蚀剂掩模,并且执行反应离子蚀刻以将抗蚀剂掩模的图案转移到下面的硬掩模上。 然后执行离子铣削以形成具有锥形边缘的磁性阶梯层,其限定了写入极的锥形后缘阶梯结构。

    Method of multi-angled bump processing for magnetic pole fabrication and systems thereof
    6.
    发明授权
    Method of multi-angled bump processing for magnetic pole fabrication and systems thereof 有权
    用于磁极制造的多角度凸块加工方法及其系统

    公开(公告)号:US08085497B2

    公开(公告)日:2011-12-27

    申请号:US12341834

    申请日:2008-12-22

    IPC分类号: G11B5/127

    CPC分类号: G11B5/3116 G11B5/3163

    摘要: A system according to one embodiment includes a magnetic pole; a bump structure above the pole, the bump structure having a first surface oriented at a first angle between 1° and 89° from a plane of deposition of the pole, and a second surface oriented at a second angle between 1° and 89° from the plane of deposition of the pole, wherein the second angle is greater than the first angle; and a shield above the bump structure. A method according to one embodiment includes forming a bump layer above a magnetic pole; removing a portion of the bump layer for forming a step therein; and milling the bump layer for defining thereon a first surface oriented at a first angle between 1° and 89° from a plane of deposition of the bump layer, and a second surface oriented at a second angle between 1° and 89° from the plane of deposition of the bump layer, wherein the second angle is greater than the first angle.

    摘要翻译: 根据一个实施例的系统包括磁极; 所述凸起结构具有从所述极的沉积平面以1°至89°之间的第一角度定向的第一表面,并且所述第一表面以与所述极的沉积的平面成1°至89°之间的第二角度定向 所述极的沉积平面,其中所述第二角度大于所述第一角度; 和凸块结构之上的屏蔽。 根据一个实施例的方法包括在磁极上形成凸起层; 去除所述凸起层的一部分以在其中形成台阶; 并且研磨所述凸起层,以在其上限定从凸起层的沉积平面以1°至89°之间的第一角度定向的第一表面,以及从该平面以1°至89°之间的第二角度定向的第二表面 所述凸起层的沉积,其中所述第二角度大于所述第一角度。

    METHOD OF MULTI-ANGLED BUMP PROCESSING FOR MAGNETIC POLE FABRICATION AND SYSTEMS THEREOF
    7.
    发明申请
    METHOD OF MULTI-ANGLED BUMP PROCESSING FOR MAGNETIC POLE FABRICATION AND SYSTEMS THEREOF 有权
    用于磁极制造及其系统的多重保护加工方法

    公开(公告)号:US20100157474A1

    公开(公告)日:2010-06-24

    申请号:US12341834

    申请日:2008-12-22

    IPC分类号: G11B5/127

    CPC分类号: G11B5/3116 G11B5/3163

    摘要: A system according to one embodiment includes a magnetic pole; a bump structure above the pole, the bump structure having a first surface oriented at a first angle between 1° and 89° from a plane of deposition of the pole, and a second surface oriented at a second angle between 1° and 89° from the plane of deposition of the pole, wherein the second angle is greater than the first angle; and a shield above the bump structure. A method according to one embodiment includes forming a bump layer above a magnetic pole; removing a portion of the bump layer for forming a step therein; and milling the bump layer for defining thereon a first surface oriented at a first angle between 1° and 89° from a plane of deposition of the bump layer, and a second surface oriented at a second angle between 1° and 89° from the plane of deposition of the bump layer, wherein the second angle is greater than the first angle.

    摘要翻译: 根据一个实施例的系统包括磁极; 所述凸起结构具有从所述极的沉积平面以1°至89°之间的第一角度定向的第一表面,并且所述第一表面以与所述极的沉积的平面成1°至89°之间的第二角度定向 所述极的沉积平面,其中所述第二角度大于所述第一角度; 和凸块结构之上的屏蔽。 根据一个实施例的方法包括在磁极上形成凸起层; 去除所述凸起层的一部分以在其中形成台阶; 并且研磨所述凸起层,以在其上限定从凸起层的沉积平面以1°至89°之间的第一角度定向的第一表面,以及从该平面以1°至89°之间的第二角度定向的第二表面 所述凸起层的沉积,其中所述第二角度大于所述第一角度。

    MAGNETIC WRITE HEAD HAVING A SELF-ALIGNED SIDE WRAP-AROUND SHIELD WITH MULTI-ANGLE SLANTED BUMP
    8.
    发明申请
    MAGNETIC WRITE HEAD HAVING A SELF-ALIGNED SIDE WRAP-AROUND SHIELD WITH MULTI-ANGLE SLANTED BUMP 有权
    具有多角度凸起的自对准侧面封装的磁头写头

    公开(公告)号:US20100157472A1

    公开(公告)日:2010-06-24

    申请号:US12343709

    申请日:2008-12-24

    IPC分类号: G11B5/10 B44C1/22

    摘要: A method for forming a magnetic write head having a trailing shield with a tapered and stepped, self aligned trailing magnetic shield. The shield has a tapered portion that tapers away from the write pole as it extends away from the ABS. This tapered portion helps to channel flux to the pole tip portion of the shield, while preventing the loss of write field to the shield. The stepped portion of the shield further helps to prevent the loss of write field and also defines a secondary throat height of the shield that can be accurately located relative to the air bearing surface.

    摘要翻译: 一种用于形成具有带有锥形和阶梯式自对准拖尾磁屏蔽的后挡板的磁写头的方法。 屏蔽件具有锥形部分,当锥形部分远离ABS延伸时,该锥形部分从写入柱逐渐变细。 该锥形部分有助于将通量传导到屏蔽的极端部分,同时防止对屏蔽件的写入场的损失。 护罩的台阶部分还有助于防止写入场的损失,并且还限定可相对于空气轴承表面精确定位的护罩的次级喉部高度。

    FENCELESS MAIN POLE DEFINITION FOR ADVANCED PERPENDICULAR MAGNETIC WRITE HEAD
    9.
    发明申请
    FENCELESS MAIN POLE DEFINITION FOR ADVANCED PERPENDICULAR MAGNETIC WRITE HEAD 有权
    高级磁性写字头的无缝主要定义

    公开(公告)号:US20090139958A1

    公开(公告)日:2009-06-04

    申请号:US11947616

    申请日:2007-11-29

    IPC分类号: B44C1/22

    CPC分类号: G03B31/00

    摘要: A method for manufacturing a magnetic write head for perpendicular magnetic recording. The method includes forming a write pole using a mask that includes a hard mask layer deposited over the write pole laminate material, and a thick, physically robust image transfer layer. The image transfer layer can be a material such as AlTiO that can be patterned by a reactive ion etching process, but which also resists deformation during processing. This process allows a write pole and wrap-around trailing shield to be constructed at very narrow track widths without the mask deformation and fencing problems experienced by prior art methods.

    摘要翻译: 一种用于制造用于垂直磁记录的磁写头的方法。 该方法包括使用掩模形成写入极,该掩模包括沉积在写磁极层压材料上的硬掩模层,以及厚的,物理上坚固的图像转印层。 图像转印层可以是诸如AlTiO的材料,其可以通过反应离子蚀刻工艺进行图案化,但也可以在加工过程中抵抗变形。 该过程允许在非常窄的轨道宽度上构造写极点和缠绕后挡板,而不会由现有技术方法遇到的掩模变形和围栏问题。