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19 条记录 (耗时 0.02 秒)

    Method for enhancing wafer alignment marks
    1.
    发明授权
    Method for enhancing wafer alignment marks 失效
    增强晶圆对准标记的方法

    公开(公告)号：US07588884B2

    公开(公告)日：2009-09-15

    申请号：US10857151

    申请日：2004-05-28

    申请人： Amanda Baer ,  Nian-Xiang Sun ,  Sue Siyang Zhang ,  Yi Zheng

    发明人： Amanda Baer ,  Nian-Xiang Sun ,  Sue Siyang Zhang ,  Yi Zheng

    IPC分类号： G03F1/00

    CPC分类号： G03F9/7084 ,  G03F9/7076 ,  G03F9/708

    摘要： A method of enhancing alignment marks defined in a relatively thin layer on a wafer by etching the alignment marks into an underlying alignment mark transfer layer is described. The target area for the alignment marks is prepared by depositing material for the transfer layer. In alternative embodiments an oversized trench is formed in the target area prior to the deposition of the transfer layer. The alignment marks can fabricated in the layer(s) deposited by the existing process or alternatively, the original layers can be removed and replaced with a layer of material selected to have comparable etching properties (definition layer).

    摘要翻译： 描述了通过将对准标记蚀刻到下面的对准标记转印层中来增强在晶片上相对薄的层中限定的对准标记的方法。 通过沉积用于转印层的材料来制备对准标记的目标区域。 在替代实施例中，在沉积转移层之前，在目标区域中形成尺寸过大的沟槽。 对准标记可以在通过现有工艺沉积的层中制造，或者替代地，原始层可被移除并被选择为具有相当的蚀刻性质（定义层）的材料层替代。

    Method for enhancing wafer alignment marks
    2.
    发明申请
    Method for enhancing wafer alignment marks 失效
    增强晶圆对准标记的方法

    公开(公告)号：US20050266357A1

    公开(公告)日：2005-12-01

    申请号：US10857151

    申请日：2004-05-28

    申请人： Amanda Baer ,  Nian-Xiang Sun ,  Sue Zhang ,  Yi Zheng

    发明人： Amanda Baer ,  Nian-Xiang Sun ,  Sue Zhang ,  Yi Zheng

    IPC分类号： G03F7/00 ,  G03F9/00

    CPC分类号： G03F9/7084 ,  G03F9/7076 ,  G03F9/708

    摘要： A method of enhancing alignment marks defined in a relatively thin layer on a wafer by etching the alignment marks into an underlying alignment mark transfer layer is described. The target area for the alignment marks is prepared by depositing material for the transfer layer. In alternative embodiments an oversized trench is formed in the target area prior to the deposition of the transfer layer. The alignment marks can fabricated in the layer(s) deposited by the existing process or alternatively, the original layers can be removed and replaced with a layer of material selected to have comparable etching properties (definition layer).

    摘要翻译： 描述了通过将对准标记蚀刻到下面的对准标记转印层中来增强在晶片上相对薄的层中限定的对准标记的方法。 通过沉积用于转印层的材料来制备对准标记的目标区域。 在替代实施例中，在沉积转移层之前，在目标区域中形成尺寸过大的沟槽。 对准标记可以在通过现有工艺沉积的层中制造，或者替代地，原始层可被移除并被选择为具有相当的蚀刻性质（定义层）的材料层替代。

    Magnetic head having a deposited second magnetic shield and fabrication method therefor
    3.
    发明申请
    Magnetic head having a deposited second magnetic shield and fabrication method therefor 审中-公开
    具有沉积的第二磁屏蔽的磁头及其制造方法

    公开(公告)号：US20060002023A1

    公开(公告)日：2006-01-05

    申请号：US10883327

    申请日：2004-06-30

    申请人： Quang Le ,  Edwin Hin Lee ,  Jui-Lung Li ,  Nian-Xiang Sun ,  Yi Zheng

    发明人： Quang Le ,  Edwin Hin Lee ,  Jui-Lung Li ,  Nian-Xiang Sun ,  Yi Zheng

    IPC分类号： G11B5/147 ,  G11B5/127 ,  G11B5/33

    CPC分类号： B82Y10/00 ,  G11B5/3163 ,  G11B5/3912

    摘要： The magnetic head includes a second magnetic shield that is fabricated in a deposition process. The present invention therefore does not require the deposition of the electrically conductive seed layer. In a preferred embodiment, the deposited second magnetic shield is comprised of cobalt zirconium tantalum (CZT). Because the CZT material is relatively soft, it is preferably deposited within an opening formed in a relatively hard RIEable material such as Ta2O5, SiO2, Si3N3, and SiOxNy, such that a subsequent chemical mechanical polishing (CMP) step can be conducted down to the surface of the relatively hard layer.

    摘要翻译： 磁头包括在沉积工艺中制造的第二磁屏蔽。 因此，本发明不要求导电种子层的沉积。 在优选实施例中，所沉积的第二磁屏蔽由钴锆钽（CZT）组成。 由于CZT材料相对较软，因此优选沉积在形成于相对较硬的RIEable材料（例如Ta 2 O 5，SiO 2）中的开口内， SUB>，Si 3 N 3 N 3和SiO x N N y，使得随后的化学机械抛光（ CMP）步骤可以向下传导到相对硬的层的表面。

    Self aligned wrap around shield for perpendicular magnetic recording
    7.
    发明授权
    Self aligned wrap around shield for perpendicular magnetic recording 有权
    自对准绕线屏蔽用于垂直磁记录

    公开(公告)号：US07649712B2

    公开(公告)日：2010-01-19

    申请号：US11116753

    申请日：2005-04-27

    申请人： Quang Le ,  Nian-Xiang Sun ,  Howard Gordon Zolla

    发明人： Quang Le ,  Nian-Xiang Sun ,  Howard Gordon Zolla

    IPC分类号： G11B5/33

    CPC分类号： G11B5/1278 ,  G11B5/1475 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

    摘要： A write element for use in perpendicular magnetic recording. The write element including a write pole and a self aligned wrap around shield that can have a trailing shield gap thickness that is different from its side shield gap thickness. The materials making up the trailing shield gap and the side shield gaps can be different materials or can be the same material deposited in two different steps. The side or wrap around portions of the trailing shield can extend down to the level of the leading edge of the write pole or can terminate at some point between the levels of the leading and trailing edge to form a partial wrap around trailing shield.

    摘要翻译： 用于垂直磁记录的写入元件。 写入元件包括写入极和自对准的围绕屏蔽的外壳，其可以具有与其侧屏蔽间隙厚度不同的后屏蔽间隙厚度。 构成后屏蔽间隙和侧屏蔽间隙的材料可以是不同的材料，或者可以是在两个不同步骤中沉积的相同材料。 后挡板的侧面或环绕的部分可以向下延伸到写柱的前缘的水平面，或者可以在前缘和后缘的水平面之间的某个点处终止，以形成围绕后挡板的部分包裹。