摘要:
Embodiments of the present invention relate to semiconducting carbon-containing devices and methods of making thereof. The semi-conducting carbon containing devices comprise an n-type semiconducting layer and a p-type semiconducting layer, both of which are positioned over a substrate. The n-type semiconducting layer can be formed by pyrolyzing a carbon- and nitrogen-containing polymer, and the p-type semiconducting layer can be formed by pyrolyzing an aromatic- and aliphatic-group-containing polymer. In some embodiments, the devices are solar cell devices.
摘要:
Embodiments of the present invention relate to semiconducting carbon-containing devices and methods of making thereof. The semi-conducting carbon containing devices comprise an n-type semiconducting layer and a p-type semiconducting layer, both of which are positioned over a substrate. The n-type semiconducting layer can be formed by pyrolyzing a carbon- and nitrogen-containing polymer, and the p-type semiconducting layer can be formed by pyrolyzing an aromatic- and aliphatic-group-containing polymer. In some embodiments, the devices are solar cell devices.
摘要:
Embodiments of the present invention relate to semiconducting carbon-containing devices and methods of making thereof. The semi-conducting carbon containing devices comprise an n-type semiconducting layer and a p-type semiconducting layer, both of which are positioned over a substrate. The n-type semiconducting layer can be formed by pyrolyzing a carbon- and nitrogen-containing polymer, and the p-type semiconducting layer can be formed by pyrolyzing an aromatic- and aliphatic-group-containing polymer. In some embodiments, the devices are solar cell devices.
摘要:
Disclosed herein are emissive ceramic materials having a dopant concentration gradient along a thickness of a yttrium aluminum garnet (YAG) region. The dopant concentration gradient may include a maximum dopant concentration, a half-maximum dopant concentration, and a slope at or near the half-maximum dopant concentration. The emissive ceramics may, in some embodiments, exhibit high internal quantum efficiencies (IQE). The emissive ceramics may, in some embodiments, include porous regions. Also disclosed herein are methods of make the emissive ceramic by sintering an assembly having doped and non-doped layers.
摘要:
A ceramic composite laminate includes a wavelength-converting layer and a non-emissive layer, wherein the ceramic composite laminate has a wavelength conversion efficiency (WCE) of at least 0.650. The ceramic composite laminate can also include a wavelength-converting ceramic layer comprising an emissive material and a scattering material, wherein the laminated composite has a total transmittance of between about 40% to about 85%. The wavelength-converting layer may be formed from plasma YAG:Ce powder.
摘要:
Disclosed herein are phosphor compositions having high gadolinium concentrations. Some embodiments include a thermally stable ceramic body comprising an emissive layer, wherein said emissive layer comprises a compound represented by the formula (A1-x-zGdxDz)3B5O12, wherein: D is a first dopant selected from the group consisting of Nd, Er, Eu, Mn, Cr, Yb, Sm, Tb, Ce, Pr, Dy, Ho, Lu and combinations thereof; A is selected from the group consisting of Y, Lu, Ca, La, Tb, and combinations thereof; B is selected from the group consisting of Al, Mg, Si, Ga, In, and combinations thereof; x is in the range of about 0.20 to about 0.80; and z is in the range of about 0.001 to about 0.10. Also disclosed are thermally stable ceramic bodies that can include the composition of formula I. Methods of making the ceramic body and a lighting device including the ceramic body are also disclosed.
摘要:
Disclosed herein are emissive ceramic materials having a dopant concentration gradient along a thickness of a yttrium aluminum garnet (YAG) region. The dopant concentration gradient may include a maximum dopant concentration, a half-maximum dopant concentration, and a slope at or near the half-maximum dopant concentration. The emissive ceramics may, in some embodiments, exhibit high internal quantum efficiencies (IQE). The emissive ceramics may, in some embodiments, include porous regions. Also disclosed herein are methods of make the emissive ceramic by sintering an assembly having doped and non-doped layers.
摘要:
Disclosed herein are phosphor compositions having high gadolinium concentrations. Some embodiments include a thermally stable ceramic body comprising an emissive layer, wherein said emissive layer comprises a compound represented by the formula (A1-x-zGdxDz)3B5O12, wherein: D is a first dopant selected from the group consisting of Nd, Er, Eu, Mn, Cr, Yb, Sm, Tb, Ce, Pr, Dy, Ho, Lu and combinations thereof; A is selected from the group consisting of Y, Lu, Ca, La, Tb, and combinations thereof; B is selected from the group consisting of Al, Mg, Si, Ga, In, and combinations thereof; x is in the range of about 0.20 and about 0.80; and z is in the range of about 0.001 and about 0.10. Also disclosed are thermally stable ceramic bodies that can include the composition of formula I. Methods of making the ceramic body and a lighting device including the ceramic body are also disclosed.
摘要:
Some embodiments disclosed herein include a lighting apparatus having a composite. The composite may include a first emissive layer and a second emissive layer. The first emissive layer may include a first garnet phosphor having a common dopant. The second emissive layer may include a second garnet phosphor having the common dopant. In some embodiments, the first emissive layer and the second emissive layer are fixed together. Some embodiments disclosed herein include efficient and economic methods of making the composite. The method may include, in some embodiments, sintering an assembly that includes pre-cursor materials for the first emissive layer and the second emissive layer.
摘要:
Disclosed herein are processes for making a plurality of substantially phase-pure metal oxide particles, the particles comprising a garnet structure, the process comprising: subjecting a dispersion of precursors to a solvothermal treatment to form a garnet intermediate and applying a flow-based thermochemical process to said garnet intermediate.