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公开(公告)号:US20200321222A1
公开(公告)日:2020-10-08
申请号:US16781703
申请日:2020-02-04
发明人: Dong Jin Kim , Jin Han Kim , Won Chul Do , Jae Hun Bae , Won Myoung Ki , Dong Hoon Han , Do Hyung Kim , Ji Hun Lee , Jun Hwan Park , Seung Nam Son , Hyun Cho , Curtis Zwenger
IPC分类号: H01L21/48 , H01L21/683 , H01L23/538 , H01L23/00 , H01L23/498
摘要: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.
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公开(公告)号:US10008393B2
公开(公告)日:2018-06-26
申请号:US15041649
申请日:2016-02-11
发明人: Dong Jin Kim , Jin Han Kim , Won Chul Do Do , Jae Hun Bae Bae , Won Myoung Ki , Dong Hoon Han , Do Hyung Kim , Ji Hun Lee , Jun Hwan Park , Seung Nam Son , Hyun Cho , Curtis Zwenger
IPC分类号: H01L21/48 , H01L21/683 , H01L23/538 , H01L23/31 , H01L21/56 , H01L23/00 , H01L23/498
CPC分类号: H01L21/4857 , H01L21/4853 , H01L21/56 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/5389 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/97 , H01L2221/68304 , H01L2221/68318 , H01L2221/68331 , H01L2221/68345 , H01L2221/68363 , H01L2224/1132 , H01L2224/131 , H01L2224/13294 , H01L2224/133 , H01L2224/16227 , H01L2224/16237 , H01L2224/16238 , H01L2224/32225 , H01L2224/73204 , H01L2224/81005 , H01L2224/81192 , H01L2224/81203 , H01L2224/81224 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81464 , H01L2224/81815 , H01L2224/8191 , H01L2224/81911 , H01L2224/81913 , H01L2224/81914 , H01L2224/83 , H01L2224/83005 , H01L2224/83104 , H01L2224/83192 , H01L2224/92 , H01L2224/9202 , H01L2224/92125 , H01L2224/97 , H01L2924/1421 , H01L2924/1433 , H01L2924/14335 , H01L2924/15311 , H01L2924/15331 , H01L2924/1815 , H01L2924/18161 , H01L2224/81 , H01L2924/00014 , H01L2924/014 , H01L2924/00012
摘要: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.
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公开(公告)号:US20180308712A1
公开(公告)日:2018-10-25
申请号:US16017735
申请日:2018-06-25
发明人: Dong Jin Kim , Jin Han Kim , Won Chul Do Do , Jae Hun Bae Bae , Won Myoung Ki , Dong Hoon Han , Do Hyung Kim , Ji Hun Lee , Jun Hwan Park , Seung Nam Son , Hyun Cho , Curtis Zwenger
IPC分类号: H01L21/48 , H01L21/683 , H01L23/538 , H01L23/00 , H01L23/498 , H01L23/31 , H01L21/56
CPC分类号: H01L21/4857 , H01L21/4853 , H01L21/56 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/5389 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/97 , H01L2221/68304 , H01L2221/68318 , H01L2221/68331 , H01L2221/68345 , H01L2221/68363 , H01L2224/1132 , H01L2224/131 , H01L2224/13294 , H01L2224/133 , H01L2224/16227 , H01L2224/16237 , H01L2224/16238 , H01L2224/32225 , H01L2224/73204 , H01L2224/81005 , H01L2224/81192 , H01L2224/81203 , H01L2224/81224 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81464 , H01L2224/81815 , H01L2224/8191 , H01L2224/81911 , H01L2224/81913 , H01L2224/81914 , H01L2224/83 , H01L2224/83005 , H01L2224/83104 , H01L2224/83192 , H01L2224/92 , H01L2224/9202 , H01L2224/92125 , H01L2224/97 , H01L2924/1421 , H01L2924/1433 , H01L2924/14335 , H01L2924/15311 , H01L2924/15331 , H01L2924/1815 , H01L2924/18161 , H01L2224/81 , H01L2924/00014 , H01L2924/014 , H01L2924/00012
摘要: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.
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公开(公告)号:US20160276174A1
公开(公告)日:2016-09-22
申请号:US15041649
申请日:2016-02-11
发明人: Dong Jin Kim , Jin Han Kim , Won Chul Do Do , Jae Hun Bae Bae , Won Myoung Ki , Dong Hoon Han , Do Hyung Kim , Ji Hun Lee , Jun Hwan Park , Seung Nam Son , Hyun Cho , Curtis Zwenger
IPC分类号: H01L21/48
CPC分类号: H01L21/4857 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/3128 , H01L23/49816 , H01L23/49822 , H01L23/5389 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/97 , H01L2221/68318 , H01L2221/68331 , H01L2221/68345 , H01L2224/1132 , H01L2224/131 , H01L2224/13294 , H01L2224/133 , H01L2224/16227 , H01L2224/16237 , H01L2224/16238 , H01L2224/32225 , H01L2224/73204 , H01L2224/81005 , H01L2224/81192 , H01L2224/81203 , H01L2224/81224 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81464 , H01L2224/81815 , H01L2224/8191 , H01L2224/81911 , H01L2224/81913 , H01L2224/81914 , H01L2224/83005 , H01L2224/83104 , H01L2224/83192 , H01L2224/92 , H01L2224/9202 , H01L2224/92125 , H01L2224/97 , H01L2924/1421 , H01L2924/1433 , H01L2924/14335 , H01L2924/15311 , H01L2924/15331 , H01L2924/1815 , H01L2924/18161 , H01L2224/81 , H01L2224/83 , H01L2924/00014 , H01L2924/014 , H01L2924/00012 , H01L2221/68304 , H01L2221/68363 , H01L21/56 , H01L21/4853
摘要: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.
摘要翻译: 一种制造半导体器件的方法及其制造的半导体器件。 例如但不限于,本公开的各个方面提供了一种用于制造半导体器件的方法,以及由此制造的半导体器件,其包括不通过硅通孔的插入器。
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公开(公告)号:US10553451B2
公开(公告)日:2020-02-04
申请号:US16017735
申请日:2018-06-25
发明人: Dong Jin Kim , Jin Han Kim , Won Chul Do , Jae Hun Bae , Won Myoung Ki , Dong Hoon Han , Do Hyung Kim , Ji Hun Lee , Jun Hwan Park , Seung Nam Son , Hyun Cho , Curtis Zwenger
IPC分类号: H01L21/48 , H01L21/683 , H01L23/538 , H01L23/00 , H01L23/498 , H01L23/31 , H01L21/56
摘要: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.
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