公开(公告)号：US20200321222A1

公开(公告)日：2020-10-08

申请号：US16781703

申请日：2020-02-04

申请人： Amkor Technology, Inc.

发明人： Dong Jin Kim ,  Jin Han Kim ,  Won Chul Do ,  Jae Hun Bae ,  Won Myoung Ki ,  Dong Hoon Han ,  Do Hyung Kim ,  Ji Hun Lee ,  Jun Hwan Park ,  Seung Nam Son ,  Hyun Cho ,  Curtis Zwenger

IPC分类号： H01L21/48 ,  H01L21/683 ,  H01L23/538 ,  H01L23/00 ,  H01L23/498

摘要： A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

公开(公告)号：US10410993B2

公开(公告)日：2019-09-10

申请号：US16107677

申请日：2018-08-21

申请人： Amkor Technology, Inc.

发明人： Yeong Beom Ko ,  Jin Han Kim ,  Dong Jin Kim ,  Do Hyung Kim ,  Glenn Rinne

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L25/00 ,  H01L21/683 ,  H01L21/311 ,  H01L25/065 ,  H01L23/498 ,  H01L21/48 ,  H01L23/538 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31

摘要： A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method for manufacturing a semiconductor device that comprises ordering and performing processing steps in a manner that prevents warpage deformation from occurring to a wafer and/or die due to mismatching thermal coefficients.

公开(公告)号：US10199322B2

公开(公告)日：2019-02-05

申请号：US15812202

申请日：2017-11-14

申请人： Amkor Technology, Inc.

发明人： Jong Sik Paek ,  Jin Young Kim ,  YoonJoo Kim ,  Jin Han Kim ,  SeungJae Lee ,  Se Woong Cha ,  SungKyu Kim ,  Jae Hun Bae ,  Dong Jin Kim ,  Doo Hyun Park

IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56

摘要： A semiconductor device with a redistribution structure on partial encapsulation is disclosed and may include an electronic device having a top surface, a bottom surface, and side surfaces between the top and bottom surfaces of the electronic device. An encapsulant may encapsulate the side surfaces of the electronic device, a contact pad may be on the top surface of the electronic device, and a redistribution structure may be coupled to the contact pad. The redistribution structure may include a linear portion and a bump pad, and a conductive bump on the bump pad may include a main bump and a protruding part extending toward the linear portion, where the protruding part may be smaller than the main bump.

公开(公告)号：US10784178B2

公开(公告)日：2020-09-22

申请号：US14931112

申请日：2015-11-03

申请人： Amkor Technology, Inc.

发明人： Yeong Beom Ko ,  Dong Jin Kim ,  Se Woong Cha

IPC分类号： H01L23/31 ,  H01L21/78 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00 ,  H01L21/56

摘要： A semiconductor product in the form of a stack chip package and a method of manufacturing the same, where a plurality of semiconductor chips are stacked one on another so as to enable the exchange of electrical signals between the semiconductor chips, and where a conductive layer is included for inputting and outputting signals to and from individual chips. A stack chip package having a compact size may, for example, be manufactured by stacking, on a first semiconductor chip, a second semiconductor chip having a smaller surface area by means of interconnection structures so as to enable the exchange of electrical signals between the first and second semiconductor chips, and by using a conductive layer for inputting and outputting signals to and from individual semiconductor chips, in lieu of a thick substrate. Furthermore, heat dissipation effects can be enhanced by the addition of a heat dissipation unit.

公开(公告)号：US20190312021A1

公开(公告)日：2019-10-10

申请号：US16412166

申请日：2019-05-14

申请人： Amkor Technology, Inc.

发明人： Dong Jin Kim ,  Jin Han Kim ,  Se Woong Cha ,  Ji Hun Lee ,  Joon Dong Kim ,  Yeong Beom Ko

IPC分类号： H01L25/00 ,  H01L21/56 ,  H01L25/10 ,  H01L23/31

摘要： A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

公开(公告)号：US10056349B2

公开(公告)日：2018-08-21

申请号：US15831771

申请日：2017-12-05

申请人： Amkor Technology, Inc.

发明人： Yeong Beom Ko ,  Jin Han Kim ,  Dong Jin Kim ,  Do Hyung Kim ,  Glenn Rinne

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L21/48 ,  H01L21/311 ,  H01L25/00 ,  H01L25/065 ,  H01L21/78 ,  H01L23/538 ,  H01L23/31 ,  H01L21/683 ,  H01L21/56 ,  H01L23/498

CPC分类号： H01L24/96 ,  H01L21/311 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/561 ,  H01L21/563 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3185 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/5384 ,  H01L23/5389 ,  H01L23/562 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68345 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/01014 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/1811 ,  H01L2924/18161 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/014

摘要： A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a method for manufacturing a semiconductor device that comprises ordering and performing processing steps in a manner that prevents warpage deformation from occurring to a wafer and/or die due to mismatching thermal coefficients.

公开(公告)号：US10008393B2

公开(公告)日：2018-06-26

申请号：US15041649

申请日：2016-02-11

申请人： Amkor Technology, Inc.

发明人： Dong Jin Kim ,  Jin Han Kim ,  Won Chul Do Do ,  Jae Hun Bae Bae ,  Won Myoung Ki ,  Dong Hoon Han ,  Do Hyung Kim ,  Ji Hun Lee ,  Jun Hwan Park ,  Seung Nam Son ,  Hyun Cho ,  Curtis Zwenger

IPC分类号： H01L21/48 ,  H01L21/683 ,  H01L23/538 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/498

CPC分类号： H01L21/4857 ,  H01L21/4853 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L2221/68304 ,  H01L2221/68318 ,  H01L2221/68331 ,  H01L2221/68345 ,  H01L2221/68363 ,  H01L2224/1132 ,  H01L2224/131 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/16227 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81192 ,  H01L2224/81203 ,  H01L2224/81224 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81464 ,  H01L2224/81815 ,  H01L2224/8191 ,  H01L2224/81911 ,  H01L2224/81913 ,  H01L2224/81914 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83104 ,  H01L2224/83192 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/1421 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/1815 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00012

摘要： A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

公开(公告)号：US20170373051A1

公开(公告)日：2017-12-28

申请号：US15683065

申请日：2017-08-22

申请人： Amkor Technology, Inc.

发明人： Dong Jin Kim ,  Jin Han Kim ,  Se Woong Cha ,  Ji Hun Lee ,  Joon Dong Kim ,  Yeong Beom Ko

IPC分类号： H01L25/00 ,  H01L23/31 ,  H01L25/10 ,  H01L21/56 ,  H01L23/498 ,  H01L21/48

CPC分类号： H01L25/50 ,  H01L21/486 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/97 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.

公开(公告)号：US20160197032A1

公开(公告)日：2016-07-07

申请号：US15069895

申请日：2016-03-14

申请人： Amkor Technology, Inc.

发明人： Jong Sik Paek ,  Jin Young Kim ,  YoonJoo Kim ,  Jin Han Kim ,  SeungJae Lee ,  Se Woong Cha ,  SungKyu Kim ,  Jae Hun Bae ,  Dong Jin Kim ,  Doo Hyun Park

IPC分类号： H01L23/498 ,  H01L23/31

CPC分类号： H01L23/49838 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3185 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02317 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/12105 ,  H01L2224/13014 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2924/12042 ,  H01L2924/18162 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2924/01079 ,  H01L2924/0103 ,  H01L2924/01083 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01047 ,  H01L2924/01029

摘要： A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include a semiconductor die having a first surface, a second surface opposite to the first surface, and side surfaces between the first and second surfaces; an encapsulant encapsulating the side surfaces of the semiconductor die; a contact pad on the first surface of the semiconductor die; and a redistribution layer coupled to the contact pad The redistribution layer may include a linear portion and a circular pad, and a hemispherical conductive bump on the circular pad may include a protruding part extending toward the linear portion and having a radius less than the hemispherical conductive bump. The second surface of the semiconductor die may be coplanar with a surface of the encapsulant. A dielectric layer may cover a portion of the first surface of the semiconductor die and a first surface of the encapsulant.

摘要翻译： 公开了一种在部分封装上具有再分配层的半导体器件，并且可以包括具有第一表面，与第一表面相对的第二表面以及第一和第二表面之间的侧表面的半导体管芯; 封装半导体管芯的侧表面的密封剂; 在所述半导体管芯的第一表面上的接触焊盘; 以及耦合到接触焊盘的再分布层。再分配层可以包括直线部分和圆形焊盘，并且圆形焊盘上的半球形导电凸块可以包括朝向线性部分延伸并且具有小于半球形导电性的半径的突出部分 磕碰。 半导体管芯的第二表面可以与密封剂的表面共面。 电介质层可以覆盖半导体管芯的第一表面的一部分和密封剂的第一表面。

公开(公告)号：US10290621B2

公开(公告)日：2019-05-14

申请号：US15683065

申请日：2017-08-22

申请人： Amkor Technology, Inc.

发明人： Dong Jin Kim ,  Jin Han Kim ,  Se Woong Cha ,  Ji Hun Lee ,  Joon Dong Kim ,  Yeong Beom Ko

IPC分类号： H01L27/32 ,  H01L25/00 ,  H01L23/31 ,  H01L21/56 ,  H01L25/10 ,  H01L23/498 ,  H01L21/48

摘要： A method for manufacturing a semiconductor package, for example a package-on-package type semiconductor device package. As non-limiting examples, various aspects of this disclosure provide high-yield methods for manufacturing a package-on-package type semiconductor package, or a portion thereof.