LATERAL GALLIUM NITRIDE SUPERJUNCTION
    1.
    发明公开

    公开(公告)号:US20230141865A1

    公开(公告)日:2023-05-11

    申请号:US18049543

    申请日:2022-10-25

    CPC classification number: H01L21/0254 H01L21/683 H01L21/0262

    Abstract: A lateral GaN superjunction transistor or switching device that is configured to have higher breakdown voltage and lower on-resistance as compared to other GaN-based switching devices. The lateral GaN superjunction transistor includes a heavily doped buried implant region (hereinafter, “buried implant region”) in the substrate underlying the transistor that operates as backside field plate (BFP) to control or reduce gate-drain electric fields at the surface of the transistor, thereby enabling the transistor to operate at higher voltages while reducing charge trapping and breakdown effects. The lateral GaN superjunction transistor operates similarly to a vertical silicon superjunction FET to enable operation of the transistor at higher voltages than other GaN or semiconductor devices, such as to enable the construction of faster or higher power electronic circuits.

    ELECTROLYZER SYSTEM CONVERTER ARRANGEMENT

    公开(公告)号:US20220389595A1

    公开(公告)日:2022-12-08

    申请号:US17338346

    申请日:2021-06-03

    Abstract: Various examples are directed to a solar power electrolyzer system comprising a first electrolyzer stack, a second electrolyzer stack, a first converter and a first converter controller. The first electrolyzer stack may be electrically coupled in series with a photovoltaic array. The first converter may be electrically coupled in series with the first electrolyzer stack and electrically coupled in series with the photovoltaic array. The second electrolyzer stack electrically may be coupled at an output of the first converter. The first converter controller may be configured to control a current gain of the first converter.

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