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公开(公告)号:US20230141865A1
公开(公告)日:2023-05-11
申请号:US18049543
申请日:2022-10-25
Applicant: Analog Devices, Inc.
Inventor: James G. Fiorenza , Daniel Piedra , Leonard Shtargot , F. Jacob Steigerwald
IPC: H01L21/02 , H01L21/683
CPC classification number: H01L21/0254 , H01L21/683 , H01L21/0262
Abstract: A lateral GaN superjunction transistor or switching device that is configured to have higher breakdown voltage and lower on-resistance as compared to other GaN-based switching devices. The lateral GaN superjunction transistor includes a heavily doped buried implant region (hereinafter, “buried implant region”) in the substrate underlying the transistor that operates as backside field plate (BFP) to control or reduce gate-drain electric fields at the surface of the transistor, thereby enabling the transistor to operate at higher voltages while reducing charge trapping and breakdown effects. The lateral GaN superjunction transistor operates similarly to a vertical silicon superjunction FET to enable operation of the transistor at higher voltages than other GaN or semiconductor devices, such as to enable the construction of faster or higher power electronic circuits.
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公开(公告)号:US11075502B2
公开(公告)日:2021-07-27
申请号:US16555506
申请日:2019-08-29
Applicant: Analog Devices, Inc.
Inventor: Shawn S. Kuo , Ronald A. Kapusta , Xu Tang , Leonard Shtargot , Eugene L. Cheung , Jonathan Paolucci
Abstract: Techniques to achieve higher power/shorter pulses with a laser diode. By initially applying a static reverse bias across the laser diode, the laser diode can turn on at a larger inductor current. When the laser diode is initially reverse biased, depletion charge and diffusion charge can be populated before the laser diode will lase. This causes the laser diode to initially turn on at a larger inductor current, which will reduce the rise time, thereby achieving higher power/shorter pulses.
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公开(公告)号:US20230295811A1
公开(公告)日:2023-09-21
申请号:US18201084
申请日:2023-05-23
Applicant: Analog Devices, Inc.
Inventor: Brian Harrington , Leonard Shtargot , Antonio Montalvo
IPC: C25B1/04 , C25B15/023 , C25B9/70 , C25B9/65 , H02S40/30 , G01R19/165 , G01R19/25 , H02J3/38
CPC classification number: C25B1/04 , C25B15/023 , C25B9/70 , C25B9/65 , H02S40/30 , G01R19/16538 , G01R19/2513 , H02J3/381 , H02J2300/26
Abstract: Various examples are directed to a solar power electrolyzer system comprising a first electrolyzer stack, a second electrolyzer stack, a first converter and a first converter controller. The first electrolyzer stack may be electrically coupled in series with a photovoltaic array. The first converter may be electrically coupled in series with the first electrolyzer stack and electrically coupled in series with the photovoltaic array. The second electrolyzer stack electrically may be coupled at an output of the first converter. The first converter controller may be configured to control a current gain of the first converter.
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公开(公告)号:US20220389595A1
公开(公告)日:2022-12-08
申请号:US17338346
申请日:2021-06-03
Applicant: Analog Devices, Inc.
Inventor: Brian Harrington , Leonard Shtargot , Antonio Montalvo
IPC: C25B1/04 , C25B15/023 , C25B9/70 , C25B9/65 , H02J3/38 , H02S40/30 , G01R19/165 , G01R19/25
Abstract: Various examples are directed to a solar power electrolyzer system comprising a first electrolyzer stack, a second electrolyzer stack, a first converter and a first converter controller. The first electrolyzer stack may be electrically coupled in series with a photovoltaic array. The first converter may be electrically coupled in series with the first electrolyzer stack and electrically coupled in series with the photovoltaic array. The second electrolyzer stack electrically may be coupled at an output of the first converter. The first converter controller may be configured to control a current gain of the first converter.
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公开(公告)号:US20210066885A1
公开(公告)日:2021-03-04
申请号:US16555506
申请日:2019-08-29
Applicant: Analog Devices, Inc.
Inventor: Shawn S. Kuo , Ronald A. Kapusta , Xu Tang , Leonard Shtargot , Eugene L. Cheung , Jonathan Paolucci
Abstract: Techniques to achieve higher power/shorter pulses with a laser diode. By initially applying a static reverse bias across the laser diode, the laser diode can turn on at a larger inductor current. When the laser diode is initially reverse biased, depletion charge and diffusion charge can be populated before the laser diode will lase. This causes the laser diode to initially turn on at a larger inductor current, which will reduce the rise time, thereby achieving higher power/shorter pulses.
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公开(公告)号:US11697882B2
公开(公告)日:2023-07-11
申请号:US17338346
申请日:2021-06-03
Applicant: Analog Devices, Inc.
Inventor: Brian Harrington , Leonard Shtargot , Antonio Montalvo
IPC: C25B1/04 , C25B15/023 , C25B9/70 , C25B9/65 , H02S40/30 , H02J3/38 , G01R19/165 , G01R19/25
CPC classification number: C25B1/04 , C25B9/65 , C25B9/70 , C25B15/023 , G01R19/16538 , G01R19/2513 , H02J3/381 , H02S40/30 , H02J2300/26
Abstract: Various examples are directed to a solar power electrolyzer system comprising a first electrolyzer stack, a second electrolyzer stack, a first converter and a first converter controller. The first electrolyzer stack may be electrically coupled in series with a photovoltaic array. The first converter may be electrically coupled in series with the first electrolyzer stack and electrically coupled in series with the photovoltaic array. The second electrolyzer stack electrically may be coupled at an output of the first converter. The first converter controller may be configured to control a current gain of the first converter.
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