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    METHODS FOR GROWING LOW-RESISTIVITY TUNGSTEN FOR HIGH ASPECT RATIO AND SMALL FEATURES
    5.
    发明申请
    METHODS FOR GROWING LOW-RESISTIVITY TUNGSTEN FOR HIGH ASPECT RATIO AND SMALL FEATURES 有权
    用于生长高电阻率和小特征的低电阻电阻的方法

    公开(公告)号：US20080254623A1

    公开(公告)日：2008-10-16

    申请号：US12030645

    申请日：2008-02-13

    申请人： Lana Hiului Chan ,  Kaihan Ashtiani ,  Joshua Collins

    发明人： Lana Hiului Chan ,  Kaihan Ashtiani ,  Joshua Collins

    IPC分类号： H01L21/44

    CPC分类号： C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76876 ,  H01L21/76877

    摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.

    摘要翻译： 本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。 这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。 沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。 使用该工艺，共形钨成核层可沉积至约10埃的厚度。 然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。 对于500埃的膜可以获得大约14微米的电阻率。

    Methods for growing low-resistivity tungsten for high aspect ratio and small features
    6.
    发明授权
    Methods for growing low-resistivity tungsten for high aspect ratio and small features 有权
    生长低电阻率钨用于高纵横比和小特征的方法

    公开(公告)号：US08409985B2

    公开(公告)日：2013-04-02

    申请号：US13095734

    申请日：2011-04-27

    申请人： Lana Hiului Chan ,  Kaihan Ashtiani ,  Joshua Collins

    发明人： Lana Hiului Chan ,  Kaihan Ashtiani ,  Joshua Collins

    IPC分类号： H01L21/4763

    CPC分类号： C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76876 ,  H01L21/76877

    摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.

    摘要翻译： 本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。 这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。 沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。 使用该工艺，共形钨成核层可沉积至约10埃的厚度。 然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。 对于500埃的膜可以获得约14μΩ·cm-cm的电阻率。

    Methods for growing low-resistivity tungsten for high aspect ratio and small features
    7.
    发明授权
    Methods for growing low-resistivity tungsten for high aspect ratio and small features 有权
    生长低电阻率钨用于高纵横比和小特征的方法

    公开(公告)号：US07955972B2

    公开(公告)日：2011-06-07

    申请号：US12030645

    申请日：2008-02-13

    申请人： Lana Hiului Chan ,  Kaihan Ashtiani ,  Joshua Collins

    发明人： Lana Hiului Chan ,  Kaihan Ashtiani ,  Joshua Collins

    IPC分类号： H01L21/4763

    CPC分类号： C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76876 ,  H01L21/76877

    摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.

    摘要翻译： 本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。 这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。 沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。 使用该工艺，共形钨成核层可沉积至约10埃的厚度。 然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。 对于500埃的膜可以获得约14μΩ·cm-cm的电阻率。

    METHODS FOR GROWING LOW-RESISTIVITY TUNGSTEN FOR HIGH ASPECT RATIO AND SMALL FEATURES
    8.
    发明申请
    METHODS FOR GROWING LOW-RESISTIVITY TUNGSTEN FOR HIGH ASPECT RATIO AND SMALL FEATURES 有权
    用于生长高电阻率和小特征的低电阻电阻的方法

    公开(公告)号：US20110223763A1

    公开(公告)日：2011-09-15

    申请号：US13095734

    申请日：2011-04-27

    申请人： Lana Hiului Chan ,  Kaihan Ashtiani ,  Joshua Collins

    发明人： Lana Hiului Chan ,  Kaihan Ashtiani ,  Joshua Collins

    IPC分类号： H01L21/768

    CPC分类号： C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76876 ,  H01L21/76877

    摘要： The present invention addresses this need by providing methods for depositing low resistivity tungsten films in small features and features having high aspect ratios. The methods involve depositing very thin tungsten nucleation layers by pulsed nucleation layer (PNL) processes and then using chemical vapor deposition (CVD) to deposit a tungsten layer to fill the feature. Depositing the tungsten nucleation layer involves exposing the substrate to alternating pulses of a boron-containing reducing agent and a tungsten-containing precursor without using any hydrogen gas, e.g., as a carrier or background gas. Using this process, a conformal tungsten nucleation layer can be deposited to a thickness as small as about 10 Angstroms. The feature may then be wholly or partially filled with tungsten by a hydrogen reduction chemical vapor deposition process. Resistivities of about 14 μΩ-cm for a 500 Angstrom film may be obtained.

    摘要翻译： 本发明通过提供沉积具有高纵横比的小特征和特征的低电阻率钨膜的方法来满足这一需要。 这些方法包括通过脉冲成核层（PNL）工艺沉积非常薄的钨成核层，然后使用化学气相沉积（CVD）沉积钨层以填充该特征。 沉积钨成核层包括将基底暴露于含硼还原剂和含钨前体的交替脉冲，而不使用任何氢气，例如载体或背景气体。 使用该工艺，共形钨成核层可沉积至约10埃的厚度。 然后可以通过氢还原化学气相沉积工艺将特征全部或部分地填充钨。 对于500埃的膜可以获得约14μΩ·cm-cm的电阻率。

    Ternary tungsten-containing resistive thin films
    9.
    发明授权
    Ternary tungsten-containing resistive thin films 有权
    三元含钨电阻薄膜

    公开(公告)号：US08062977B1

    公开(公告)日：2011-11-22

    申请号：US12363330

    申请日：2009-01-30

    申请人： Kaihan Ashtiani ,  Raashina Humayun ,  Girish Dixit ,  Anna Battaglia ,  Stefano Rassiga

    发明人： Kaihan Ashtiani ,  Raashina Humayun ,  Girish Dixit ,  Anna Battaglia ,  Stefano Rassiga

    IPC分类号： H01L21/44

    CPC分类号： H01L45/126 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/16

    摘要： Heater elements made of high resistivity ternary and quaternary thin films containing three or more of W, C, O, N and Si are provided. The thin films have resistivities at least about 1000 μΩ-cm at 50 to 60 Angstroms. The ternary and quaternary films have improved stability over binary films on anneal. Methods of depositing the thin films are also provided. The methods involve depositing the film from an organometallic tungsten precursor under conditions such that a highly resistive, continuous film is formed.

    摘要翻译： 提供由包含W，C，O，N和Si三种或更多种的高电阻率三元和四元薄膜制成的加热元件。 薄膜在50至60埃处具有至少约1000μΩ-OHgr·-cm的电阻率。 三元和四元膜在退火时具有改善的二元膜的稳定性。 还提供了沉积薄膜的方法。 所述方法包括在有机金属钨前驱体上沉积薄膜，使得形成高电阻连续的薄膜。

    Methods for forming all tungsten contacts and lines
    10.
    发明授权
    Methods for forming all tungsten contacts and lines 有权
    形成所有钨触点和线的方法

    公开(公告)号：US08053365B2

    公开(公告)日：2011-11-08

    申请号：US11963698

    申请日：2007-12-21

    申请人： Raashina Humayun ,  Kaihan Ashtiani ,  Karl B. Levy

    发明人： Raashina Humayun ,  Kaihan Ashtiani ,  Karl B. Levy

    IPC分类号： H01L21/302

    CPC分类号： H01L21/76843 ,  C23C16/30 ,  H01L21/28556 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a halogen-free organometallic tungsten precursor. The mixed tungsten/tungsten carbide layer is a thin, low resistivity film with excellent adhesion and a good base for subsequent tungsten plug or line formation.

    摘要翻译： 提供了新的低电阻率钨膜堆叠方案和用于沉积它们的方法。 膜堆叠包括用于沉积钨成核和/或体积层的基于混合的含钨/钨的化合物（例如，WC）层。 根据各种实施方案，这些富钨层可用作钨接触金属化和位线中的阻挡层和/或粘合层。 富含钨层的沉积包括将基底暴露于无卤素的有机金属钨前体。 混合的钨/碳化钨层是一种薄的低电阻率薄膜，具有优异的粘附性，并且可以用于随后的钨丝塞或线形成。