公开(公告)号：US08058170B2

公开(公告)日：2011-11-15

申请号：US12407541

申请日：2009-03-19

申请人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michael Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

发明人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michael Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

IPC分类号： H01L21/44

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45534 ,  H01L21/28562 ,  H01L21/76864 ,  H01L21/76876 ,  H01L21/76877

摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.

摘要翻译： 提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。 所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。 处理操作降低沉积的钨膜的电阻率。 在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。 同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。 该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。 这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

公开(公告)号：US20100159694A1

公开(公告)日：2010-06-24

申请号：US12407541

申请日：2009-03-19

申请人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michael Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

发明人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michael Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

IPC分类号： H01L21/285 ,  B05C11/00

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45534 ,  H01L21/28562 ,  H01L21/76864 ,  H01L21/76876 ,  H01L21/76877

摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.

摘要翻译： 提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。 所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。 处理操作降低沉积的钨膜的电阻率。 在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。 同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。 该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。 这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

公开(公告)号：US20120015518A1

公开(公告)日：2012-01-19

申请号：US13244016

申请日：2011-09-23

申请人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michael Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

发明人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michael Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

IPC分类号： H01L21/283 ,  C23C16/455 ,  C23C16/52 ,  C23C16/06

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45534 ,  H01L21/28562 ,  H01L21/76864 ,  H01L21/76876 ,  H01L21/76877

摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.

摘要翻译： 提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。 所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。 处理操作降低沉积的钨膜的电阻率。 在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。 同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。 该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。 这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

公开(公告)号：US08409987B2

公开(公告)日：2013-04-02

申请号：US13244016

申请日：2011-09-23

申请人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michal Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

发明人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michal Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

IPC分类号： H01L21/44

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45534 ,  H01L21/28562 ,  H01L21/76864 ,  H01L21/76876 ,  H01L21/76877

摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.

摘要翻译： 提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。 所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。 处理操作降低沉积的钨膜的电阻率。 在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。 同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。 该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。 这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

公开(公告)号：US20160358742A1

公开(公告)日：2016-12-08

申请号：US14052610

申请日：2013-10-11

申请人： William M. Tong ,  Alan D. Brodie ,  Jeffrey Elam ,  Anil Mane

发明人： William M. Tong ,  Alan D. Brodie ,  Jeffrey Elam ,  Anil Mane

IPC分类号： H01J37/06 ,  H01J37/12 ,  C23C16/32 ,  C23C16/40 ,  C23C16/34 ,  H01J37/317 ,  C23C16/455

CPC分类号： C23C16/45529 ,  B81B3/0008 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/402 ,  C23C16/403 ,  C23C16/405 ,  H01J37/026 ,  H01J37/06 ,  H01J37/12 ,  H01J37/3174 ,  H01J2237/1205 ,  H01J2237/31794

摘要： A system and method associated with a charge drain coating are disclosed. The charge drain coating may be applied to surfaces of an electron-optical device to drain electrons that come into contact with the charge drain coating so that the performance of the electron-optical device will not be hindered by electron charge build-up. The charge drain coating may include a doping material that coalesces into clusters that are embedded within a high dielectric insulating material. The charge drain coating may be deposited onto the inner surfaces of lenslets of the electron-optical device.

摘要翻译： 公开了一种与电荷放电涂层相关的系统和方法。 可以将电荷漏极涂层施加到电子 - 光学器件的表面以排出与电荷漏极涂层接触的电子，使得电子 - 电子器件的性能不会受到电子电荷积聚的阻碍。 电荷漏极涂层可以包括聚集成嵌入高介电绝缘材料中的簇的掺杂材料。 电荷漏极涂层可以沉积到电子 - 光学器件的小透镜的内表面上。

公开(公告)号：US20180037993A1

公开(公告)日：2018-02-08

申请号：US15786358

申请日：2017-10-17

申请人： William M. Tong ,  Alan D. Brodie ,  Jeffrey Elam ,  Anil Mane

发明人： William M. Tong ,  Alan D. Brodie ,  Jeffrey Elam ,  Anil Mane

IPC分类号： C23C16/455 ,  C23C16/32 ,  C23C16/34 ,  H01J37/02 ,  B81B3/00 ,  H01J37/317 ,  C23C16/40 ,  H01J37/12

CPC分类号： C23C16/45529 ,  B81B3/0008 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/402 ,  C23C16/403 ,  C23C16/405 ,  H01J37/026 ,  H01J37/06 ,  H01J37/12 ,  H01J37/3174 ,  H01J2237/1205 ,  H01J2237/31794

摘要： A digital pattern generator has a MEMS substrate with a plurality of doping layers and a plurality of insulating layers between respective doping layers. A plurality of lenslets are formed as holes through the substrate. A charge drain coating is applied to the inner surfaces of the lenslets. The charge drain coating drains electrons that come into contact with the charge drain coating so that the performance of the digital pattern generator will not be hindered by electron charge build-up. The charge drain coating includes a doping material that coalesces into clusters that are embedded within a high dielectric insulating material.

公开(公告)号：US09824851B2

公开(公告)日：2017-11-21

申请号：US14052610

申请日：2013-10-11

申请人： William M. Tong ,  Alan D. Brodie ,  Jeffrey Elam ,  Anil Mane

发明人： William M. Tong ,  Alan D. Brodie ,  Jeffrey Elam ,  Anil Mane

IPC分类号： H01J37/02 ,  H01J37/06 ,  B81B3/00 ,  H01J37/317 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  H01J37/12

CPC分类号： C23C16/45529 ,  B81B3/0008 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/402 ,  C23C16/403 ,  C23C16/405 ,  H01J37/026 ,  H01J37/06 ,  H01J37/12 ,  H01J37/3174 ,  H01J2237/1205 ,  H01J2237/31794

摘要： A system and method associated with a charge drain coating are disclosed. The charge drain coating may be applied to surfaces of an electron-optical device to drain electrons that come into contact with the charge drain coating so that the performance of the electron-optical device will not be hindered by electron charge build-up. The charge drain coating may include a doping material that coalesces into clusters that are embedded within a high dielectric insulating material. The charge drain coating may be deposited onto the inner surfaces of lenslets of the electron-optical device.