公开(公告)号：US08409987B2

公开(公告)日：2013-04-02

申请号：US13244016

申请日：2011-09-23

申请人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michal Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

发明人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michal Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

IPC分类号： H01L21/44

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45534 ,  H01L21/28562 ,  H01L21/76864 ,  H01L21/76876 ,  H01L21/76877

摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.

摘要翻译： 提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。 所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。 处理操作降低沉积的钨膜的电阻率。 在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。 同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。 该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。 这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

公开(公告)号：US08058170B2

公开(公告)日：2011-11-15

申请号：US12407541

申请日：2009-03-19

申请人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michael Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

发明人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michael Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

IPC分类号： H01L21/44

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45534 ,  H01L21/28562 ,  H01L21/76864 ,  H01L21/76876 ,  H01L21/76877

摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.

摘要翻译： 提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。 所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。 处理操作降低沉积的钨膜的电阻率。 在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。 同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。 该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。 这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

公开(公告)号：US20120015518A1

公开(公告)日：2012-01-19

申请号：US13244016

申请日：2011-09-23

申请人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michael Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

发明人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michael Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

IPC分类号： H01L21/283 ,  C23C16/455 ,  C23C16/52 ,  C23C16/06

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45534 ,  H01L21/28562 ,  H01L21/76864 ,  H01L21/76876 ,  H01L21/76877

摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.

摘要翻译： 提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。 所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。 处理操作降低沉积的钨膜的电阻率。 在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。 同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。 该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。 这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

公开(公告)号：US20100159694A1

公开(公告)日：2010-06-24

申请号：US12407541

申请日：2009-03-19

申请人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michael Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

发明人： Anand Chandrashekar ,  Mirko Glass ,  Raashina Humayun ,  Michael Danek ,  Kaihan Ashtiani ,  Feng Chen ,  Lana Hiului Chan ,  Anil Mane

IPC分类号： H01L21/285 ,  B05C11/00

CPC分类号： H01L21/28556 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45534 ,  H01L21/28562 ,  H01L21/76864 ,  H01L21/76876 ,  H01L21/76877

摘要： Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.

摘要翻译： 提供了形成具有良好均匀性和对下层的良好粘附性的低电阻率钨膜的方法。 所述方法包括在低温下使用脉冲成核层工艺形成钨成核层，然后在沉积大块钨填料之前处理沉积的成核层。 处理操作降低沉积的钨膜的电阻率。 在某些实施方案中，沉积成核层涉及在不存在氢的情况下的基于硼的化学。 同样在某些实施方案中，处理操作包括将成核层暴露于还原剂和含钨前体的交替循环。 该方法对于以高纵横比和/或窄特征沉积薄膜是有用的。 这些薄膜在窄线宽度下表现出低电阻率和优异的台阶覆盖率。

公开(公告)号：US08623733B2

公开(公告)日：2014-01-07

申请号：US12755259

申请日：2010-04-06

申请人： Feng Chen ,  Raashina Humayun ,  Michal Danek ,  Anand Chandrashekar

发明人： Feng Chen ,  Raashina Humayun ,  Michal Danek ,  Anand Chandrashekar

IPC分类号： H01L21/20

CPC分类号： H01L23/535 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45523 ,  C23C16/52 ,  H01L21/28556 ,  H01L21/67017 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76895 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are methods of void-free tungsten fill of high aspect ratio features. According to various embodiments, the methods involve a reduced temperature chemical vapor deposition (CVD) process to fill the features with tungsten. In certain embodiments, the process temperature is maintained at less than about 350° C. during the chemical vapor deposition to fill the feature. The reduced-temperature CVD tungsten fill provides improved tungsten fill in high aspect ratio features, provides improved barriers to fluorine migration into underlying layers, while achieving similar thin film resistivity as standard CVD fill. Also provided are methods of depositing thin tungsten films having low-resistivity. According to various embodiments, the methods involve performing a reduced temperature low resistivity treatment on a deposited nucleation layer prior to depositing a tungsten bulk layer and/or depositing a bulk layer via a reduced temperature CVD process followed by a high temperature CVD process.

摘要翻译： 提供了高空隙特征的无空隙钨填充的方法。 根据各种实施方案，该方法包括用钨填充特征的降温化学气相沉积（CVD）工艺。 在某些实施方案中，在化学气相沉积期间将工艺温度保持在小于约350℃以填充该特征。 降低温度的CVD钨填料提供了改进的高纵横比特征的钨填充，为氟迁移到下层提供了改进的障碍，同时获得与标准CVD填充相似的薄膜电阻率。 还提供了沉积具有低电阻率的薄钨膜的方法。 根据各种实施例，所述方法包括在沉积钨体层之前对沉积的成核层进行降低温度的低电阻率处理和/或通过降低温度的CVD工艺沉积体层，然后进行高温CVD工艺。

公开(公告)号：US20100267230A1

公开(公告)日：2010-10-21

申请号：US12755248

申请日：2010-04-06

申请人： Anand Chandrashekar ,  Feng Chen ,  Raashina Humayun ,  Michal Danek

发明人： Anand Chandrashekar ,  Feng Chen ,  Raashina Humayun ,  Michal Danek

IPC分类号： H01L21/768 ,  B05C11/00

CPC分类号： H01L23/535 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45523 ,  C23C16/52 ,  H01L21/28556 ,  H01L21/67017 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76895 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are methods of void-free tungsten fill of high aspect ratio features. According to various embodiments, the methods involve a reduced temperature chemical vapor deposition (CVD) process to fill the features with tungsten. In certain embodiments, the process temperature is maintained at less than about 350° C. during the chemical vapor deposition to fill the feature. The reduced-temperature CVD tungsten fill provides improved tungsten fill in high aspect ratio features, provides improved barriers to fluorine migration into underlying layers, while achieving similar thin film resistivity as standard CVD fill. Also provided are methods of depositing thin tungsten films having low-resistivity. According to various embodiments, the methods involve performing a reduced temperature low resistivity treatment on a deposited nucleation layer prior to depositing a tungsten bulk layer and/or depositing a bulk layer via a reduced temperature CVD process followed by a high temperature CVD process.

摘要翻译： 提供了高空隙特征的无空隙钨填充的方法。 根据各种实施方案，该方法包括用钨填充特征的降温化学气相沉积（CVD）工艺。 在某些实施方案中，在化学气相沉积期间将工艺温度保持在小于约350℃以填充该特征。 降低温度的CVD钨填料提供了改进的高纵横比特征的钨填充，为氟迁移到下层提供了改进的障碍，同时获得与标准CVD填充相似的薄膜电阻率。 还提供了沉积具有低电阻率的薄钨膜的方法。 根据各种实施例，所述方法包括在沉积钨体层之前对沉积的成核层进行降低温度的低电阻率处理，和/或通过降温CVD工艺沉积体层，接着进行高温CVD工艺。

公开(公告)号：US20100267235A1

公开(公告)日：2010-10-21

申请号：US12755259

申请日：2010-04-06

申请人： Feng Chen ,  Raashina Humayun ,  Michal Danek ,  Anand Chandrashekar

发明人： Feng Chen ,  Raashina Humayun ,  Michal Danek ,  Anand Chandrashekar

IPC分类号： H01L21/3205

CPC分类号： H01L23/535 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45523 ,  C23C16/52 ,  H01L21/28556 ,  H01L21/67017 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76895 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided are methods of void-free tungsten fill of high aspect ratio features. According to various embodiments, the methods involve a reduced temperature chemical vapor deposition (CVD) process to fill the features with tungsten. In certain embodiments, the process temperature is maintained at less than about 350° C. during the chemical vapor deposition to fill the feature. The reduced-temperature CVD tungsten fill provides improved tungsten fill in high aspect ratio features, provides improved barriers to fluorine migration into underlying layers, while achieving similar thin film resistivity as standard CVD fill. Also provided are methods of depositing thin tungsten films having low-resistivity. According to various embodiments, the methods involve performing a reduced temperature low resistivity treatment on a deposited nucleation layer prior to depositing a tungsten bulk layer and/or depositing a bulk layer via a reduced temperature CVD process followed by a high temperature CVD process.

摘要翻译： 提供了高空隙特征的无空隙钨填充的方法。 根据各种实施方案，该方法包括用钨填充特征的降温化学气相沉积（CVD）工艺。 在某些实施方案中，在化学气相沉积期间将工艺温度保持在小于约350℃以填充该特征。 降低温度的CVD钨填料提供了改进的高纵横比特征的钨填充，为氟迁移到下层提供了改进的障碍，同时获得与标准CVD填充相似的薄膜电阻率。 还提供了沉积具有低电阻率的薄钨膜的方法。 根据各种实施例，所述方法包括在沉积钨体层之前对沉积的成核层进行降低温度的低电阻率处理和/或通过降低温度的CVD工艺沉积体层，然后进行高温CVD工艺。

公开(公告)号：US09034768B2

公开(公告)日：2015-05-19

申请号：US12833823

申请日：2010-07-09

申请人： Anand Chandrashekar ,  Raashina Humayun ,  Michal Danek ,  Aaron R. Fellis ,  Sean Chang

发明人： Anand Chandrashekar ,  Raashina Humayun ,  Michal Danek ,  Aaron R. Fellis ,  Sean Chang

IPC分类号： H01L21/302 ,  C23F4/00 ,  C23C16/04 ,  C23C16/06 ,  H01L21/768

CPC分类号： C23F4/00 ,  C23C16/045 ,  C23C16/06 ,  H01L21/76877

摘要： Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials are provided. The method involves providing a partially fabricated semiconductor substrate and depositing a tungsten-containing layer on the substrate surface to partially fill one or more high aspect ratio features. The method continues with selective removal of a portion of the deposited layer such that more material is removed near the feature opening than inside the feature. In certain embodiments, removal may be performed at mass-transport limited conditions with less etchant available inside the feature than near its opening. Etchant species are activated before being introduced into the processing chamber and/or while inside the chamber. In specific embodiments, recombination of the activated species is substantially limited and/or controlled during removal, e.g., operation is performed at less than about 250° C. and/or less than about 5 Torr.

摘要翻译： 提供了用含钨材料填充高纵横比特征的方法和装置。 该方法包括提供部分制造的半导体衬底并且在衬底表面上沉积含钨层以部分填充一个或多个高纵横比特征。 该方法继续选择性地去除沉积层的一部分，使得在特征开口附近更多的材料在特征内部被移除。 在某些实施方案中，可以在质量传输限制条件下进行移除，在特征内可用蚀刻剂较少，而不是靠近其开口。 在引入处理室之前和/或在室内时，蚀刻剂物质被激活。 在具体实施方案中，活化物质的重组在去除期间基本上受到限制和/或控制，例如在小于约250℃和/或小于约5托下进行操作。

公开(公告)号：US08124531B2

公开(公告)日：2012-02-28

申请号：US13016656

申请日：2011-01-28

申请人： Anand Chandrashekar ,  Raashina Humayun ,  Michal Danek ,  Aaron R. Fellis ,  Sean Chang

发明人： Anand Chandrashekar ,  Raashina Humayun ,  Michal Danek ,  Aaron R. Fellis ,  Sean Chang

IPC分类号： H01L21/44

CPC分类号： H01L21/486 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76865 ,  H01L21/76877

摘要： Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.

摘要翻译： 提供了以基本上无空隙的方式用含钨材料填充高纵横比特征的方法和装置。 在某些实施方案中，该方法包括沉积含钨材料的初始层，然后选择性地去除初始层的一部分以形成沿着高纵横比特征的深度差异钝化的剩余层。 在某些实施例中，剩余层在特征开口附近比在特征内更加钝化。 该方法可以继续在剩余层上沉积相同或其它材料的附加层。 由于剩余层的差分钝化，在该后续沉积操作期间的沉积速率在特征开口附近比在特征内部的沉积速率更慢。 这种沉积变化又可以有助于防止特征的过早闭合并且有助于以基本无空隙的方式填充特征。

公开(公告)号：US20100144140A1

公开(公告)日：2010-06-10

申请号：US12535377

申请日：2009-08-04

申请人： Anand Chandrashekar ,  Raashina Humayun ,  Michal Danek

发明人： Anand Chandrashekar ,  Raashina Humayun ,  Michal Danek

IPC分类号： H01L21/44

CPC分类号： H01L21/76877 ,  C23C16/045 ,  C23C16/14 ,  H01L21/28556

摘要： Methods of filling gaps or recessed features on substrates are provided. According to various embodiments, the methods involve bulk deposition of tungsten to partially fill the feature followed by a removing a top portion of the deposited tungsten. In particular embodiments, the top portion is removed by exposing the substrate to activated fluorine species. By selectively removing sharp and protruding peaks of the deposited tungsten grains, the removal operation polishes the tungsten along the feature sidewall. Multiple deposition-removal cycles can be used to close the feature. The filled feature is less prone to coring during CMP.

摘要翻译： 提供了在基板上填充间隙或凹陷特征的方法。 根据各种实施例，该方法涉及大量沉积钨以部分地填充特征，随后去除沉积的钨的顶部。 在具体实施方案中，通过将底物暴露于活化的氟物质来除去顶部。 通过选择性地去除沉积的钨颗粒的尖锐和突出的峰，去除操作沿着特征侧壁抛光钨。 可以使用多个沉积去除循环来关闭特征。 填充的特征在CMP期间较不容易取芯。