摘要:
A semiconductor device includes a substrate on which an electronic circuit is provided. Two or more pads may be present which can connect the electronic circuit to an external device outside the substrate. A current meter is electrically in contact with at least a part of the substrate and/or the pad. The meter can measure a parameter forming a measure for an aggregate amount of a current flowing between the substrate and said pads. A control unit is connected to the current meter and the electronic circuit, for controlling the electronic circuit based on the measured parameter.
摘要:
A semiconductor device includes a substrate on which an electronic circuit is provided. One or more pads may be present which can connect the electronic circuit to an external device outside the substrate. A current meter is electrically in contact with at least a part of the substrate and/or the pad. The meter can measure a parameter forming a measure for an amount of a current flowing between the substrate and at least one of the at least one pad. A control unit is connected to the current meter and the electronic circuit, for controlling the electronic circuit based on the measured parameter.
摘要:
A semiconductor device includes a substrate on which an electronic circuit is provided. One or more pads may be present which can connect the electronic circuit to an external device outside the substrate. A current meter is electrically in contact with at least a part of the substrate and/or the pad. The meter can measure a parameter forming a measure for an amount of a current flowing between the substrate and at least one of the at least one pad. A control unit is connected to the current meter and the electronic circuit, for controlling the electronic circuit based on the measured parameter.
摘要:
A semiconductor device includes a substrate on which an electronic circuit is provided. Two or more pads may be present which can connect the electronic circuit to an external device outside the substrate. A current meter is electrically in contact with at least a part of the substrate and/or the pad. The meter can measure a parameter forming a measure for an aggregate amount of a current flowing between the substrate and said pads. A control unit is connected to the current meter and the electronic circuit, for controlling the electronic circuit based on the measured parameter.
摘要:
A circuit arrangement for detecting unwanted signals on a clock signal comprises an input for receiving the clock signal, and a Phase Lock Loop PLL circuit having a reference input coupled to the input of the circuit arrangement for receiving the clock signal and an output for providing a PLL output signal. The circuit arrangement further comprises a detector coupled to the output of the PLL circuit and to the input of the circuit arrangement. The detector is arranged to identify correct transitions in the clock signal using the PLL output signal, and to remove incorrect transitions due to unwanted signals from the clock signal so as to provide a filtered clock signal at an output of the circuit arrangement.
摘要:
A circuit arrangement for detecting unwanted signals on a clock signal comprises an input for receiving the clock signal, and a Phase Lock Loop PLL circuit having a reference input coupled to the input of the circuit arrangement for receiving the clock signal and an output for providing a PLL output signal. The circuit arrangement further comprises a detector coupled to the output of the PLL circuit and to the input of the circuit arrangement. The detector is arranged to identify correct transitions in the clock signal using the PLL output signal, and to remove incorrect transitions due to unwanted signals from the clock signal so as to provide a filtered clock signal at an output of the circuit arrangement.
摘要:
A semiconductor device comprises a substrate provided with a doping of a first type, on which an electronic circuit is provided surrounded by a circuit portion of the substrate provided with a doping of a second type; at least one pad for connecting the electronic circuit to an external device outside the substrate, surrounded by a pad portion provided with a doping of the second type; a sensing device comprising a sensor portion of the substrate provided with a doping of the first type, for sensing a parameter forming a measure for a local electrical potential of the substrate; and an evaluation unit connected to the sensing device, for providing an evaluation signal based on a difference between the parameter and a reference value.
摘要:
A semiconductor device comprises a substrate provided with a doping of a first type, on which an electronic circuit is provided surrounded by a circuit portion of the substrate provided with a doping of a second type; at least one pad for connecting the electronic circuit to an external device outside the substrate, surrounded by a pad portion provided with a doping of the second type; a sensing device comprising a sensor portion of the substrate provided with a doping of the first type, for sensing a parameter forming a measure for a local electrical potential of the substrate; and an evaluation unit connected to the sensing device, for providing an evaluation signal based on a difference between the parameter and a reference value.
摘要:
A semiconductor device configured with one or more integrated breakdown protection diodes in non-isolated power transistor devices and electronic apparatus, and methods for fabricating the devices.
摘要:
Protection circuits, device structures and related fabrication methods are provided. An exemplary protection circuit includes a first protection arrangement and a second protection arrangement. The first protection arrangement includes a first transistor having a first collector, a first emitter, and a first base coupled to the first emitter at a first node, and a second transistor having a second collector, a second emitter, and a second base coupled to the second emitter at a second node, the second collector being coupled to the first collector at a third node. The second protection arrangement is coupled electrically in series between the second node and a fourth node. The protection circuit further includes a first diode coupled between the third node and the fourth node.