公开(公告)号：US20160099349A1

公开(公告)日：2016-04-07

申请号：US14507063

申请日：2014-10-06

申请人： Patrice M. Parris ,  Hubert M. Bode ,  Weize Chen ,  Richard J. DeSouza ,  Andreas Laudenbach ,  Kurt U. Neugebauer

发明人： Patrice M. Parris ,  Hubert M. Bode ,  Weize Chen ,  Richard J. DeSouza ,  Andreas Laudenbach ,  Kurt U. Neugebauer

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L27/07

CPC分类号： H01L29/7823 ,  H01L21/761 ,  H01L27/0255 ,  H01L27/0727 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/063 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor device configured with one or more integrated breakdown protection diodes in non-isolated power transistor devices and electronic apparatus, and methods for fabricating the devices.

摘要翻译： 在非隔离功率晶体管器件和电子设备中配置有一个或多个集成击穿保护二极管的半导体器件，以及用于制造器件的方法。

公开(公告)号：US09620496B2

公开(公告)日：2017-04-11

申请号：US14644041

申请日：2015-03-10

申请人： Weize Chen ,  Hubert M. Bode ,  Andreas Laudenbach ,  Kurt U. Neugebauer ,  Patrice M. Parris

发明人： Weize Chen ,  Hubert M. Bode ,  Andreas Laudenbach ,  Kurt U. Neugebauer ,  Patrice M. Parris

IPC分类号： H02H3/00 ,  H02H3/02 ,  H02H9/04 ,  H01L27/02 ,  H01L27/06 ,  H01L21/8222

CPC分类号： H01L27/0248 ,  H01L21/8222 ,  H01L27/0259 ,  H01L27/067

摘要： Protection circuits, device structures and related fabrication methods are provided. An exemplary protection circuit includes a first protection arrangement and a second protection arrangement. The first protection arrangement includes a first transistor having a first collector, a first emitter, and a first base coupled to the first emitter at a first node, and a second transistor having a second collector, a second emitter, and a second base coupled to the second emitter at a second node, the second collector being coupled to the first collector at a third node. The second protection arrangement is coupled electrically in series between the second node and a fourth node. The protection circuit further includes a first diode coupled between the third node and the fourth node.

公开(公告)号：US09559097B2

公开(公告)日：2017-01-31

申请号：US14507063

申请日：2014-10-06

申请人： Patrice M. Parris ,  Hubert M. Bode ,  Weize Chen ,  Richard J DeSouza ,  Andreas Laudenbach ,  Kurt U. Neugebauer

发明人： Patrice M. Parris ,  Hubert M. Bode ,  Weize Chen ,  Richard J DeSouza ,  Andreas Laudenbach ,  Kurt U. Neugebauer

IPC分类号： H01L27/07 ,  H01L29/66 ,  H01L27/02 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L29/7823 ,  H01L21/761 ,  H01L27/0255 ,  H01L27/0727 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/063 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor device configured with one or more integrated breakdown protection diodes in non-isolated power transistor devices and electronic apparatus, and methods for fabricating the devices.

摘要翻译： 在非隔离功率晶体管器件和电子设备中配置有一个或多个集成击穿保护二极管的半导体器件，以及用于制造器件的方法。

公开(公告)号：US20130270606A1

公开(公告)日：2013-10-17

申请号：US13448994

申请日：2012-04-17

申请人： Weize Chen ,  Hubert M. Bode ,  Richard J. De Souza ,  Patrice M. Parris

发明人： Weize Chen ,  Hubert M. Bode ,  Richard J. De Souza ,  Patrice M. Parris

IPC分类号： H01L29/06 ,  H01L21/336 ,  H01L29/78

CPC分类号： H01L29/7823 ,  H01L21/2253 ,  H01L29/0626 ,  H01L29/0653 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7824 ,  H01L29/7835

摘要： A device includes a semiconductor substrate having a first conductivity type, a device isolating region in the semiconductor substrate, defining an active area, and having a second conductivity type, a body region in the active area and having the first conductivity type, and a drain region in the active area and spaced from the body region to define a conduction path of the device, the drain region having the second conductivity type. The device isolating region and the body region are spaced from one another to establish a first breakdown voltage lower than a second breakdown voltage in the conduction path.

摘要翻译： 一种器件包括具有第一导电类型的半导体衬底，半导体衬底中的器件隔离区，限定有源区，并具有第二导电类型，有源区中的体区，并具有第一导电类型，漏极 区域，并且与身体区域间隔开以限定器件的导电路径，漏极区域具有第二导电类型。 器件隔离区域和体区域彼此间隔开以建立低于导通路径中的第二击穿电压的第一击穿电压。

公开(公告)号：US09236472B2

公开(公告)日：2016-01-12

申请号：US13448994

申请日：2012-04-17

申请人： Weize Chen ,  Hubert M. Bode ,  Richard J. De Souza ,  Patrice M. Parris

发明人： Weize Chen ,  Hubert M. Bode ,  Richard J. De Souza ,  Patrice M. Parris

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/10

CPC分类号： H01L29/7823 ,  H01L21/2253 ,  H01L29/0626 ,  H01L29/0653 ,  H01L29/0865 ,  H01L29/0882 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7824 ,  H01L29/7835

摘要： A device includes a semiconductor substrate having a first conductivity type, a device isolating region in the semiconductor substrate, defining an active area, and having a second conductivity type, a body region in the active area and having the first conductivity type, and a drain region in the active area and spaced from the body region to define a conduction path of the device, the drain region having the second conductivity type. The device isolating region and the body region are spaced from one another to establish a first breakdown voltage lower than a second breakdown voltage in the conduction path.

摘要翻译： 一种器件包括具有第一导电类型的半导体衬底，半导体衬底中的器件隔离区，限定有源区，并具有第二导电类型，有源区中的体区，并具有第一导电类型，漏极 区域，并且与身体区域间隔开以限定器件的导电路径，漏极区域具有第二导电类型。 器件隔离区域和体区域彼此间隔开以建立低于导通路径中的第二击穿电压的第一击穿电压。

公开(公告)号：US09142554B2

公开(公告)日：2015-09-22

申请号：US13671503

申请日：2012-11-07

申请人： Weize Chen ,  Hubert M. Bode ,  Richard J. De Souza ,  Patrice M. Parris

发明人： Weize Chen ,  Hubert M. Bode ,  Richard J. De Souza ,  Patrice M. Parris

IPC分类号： H01L29/78 ,  H01L21/76 ,  H01L27/07 ,  H01L21/761

CPC分类号： H01L27/0727 ,  H01L21/761 ,  H01L29/66143 ,  H01L29/66681

摘要： Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within area of the substrate contained by the isolation structure, and a diode circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a body region of the second conductivity type, and the diode circuit is connected between the isolation structure and the body region. The diode circuit may include one or more Schottky diodes and/or PN junction diodes. In further embodiments, the diode circuit may include one or more resistive networks in series and/or parallel with the Schottky and/or PN diode(s).

摘要翻译： 半导体器件和驱动电路的实施例包括具有第一导电类型的半导体衬底，隔离结构（包括沉陷区和掩埋层），由隔离结构包含的衬底区域内的有源器件和二极管电路。 掩埋层位于顶部衬底表面下方，并且具有第二导电类型。 沉降片区域在顶部衬底表面和掩埋层之间延伸，并且具有第二导电类型。 有源器件包括第二导电类型的体区，并且二极管电路连接在隔离结构和体区之间。 二极管电路可以包括一个或多个肖特基二极管和/或PN结二极管。 在另外的实施例中，二极管电路可以包括与肖特基和/或PN二极管串联和/或并联的一个或多个电阻网络。

公开(公告)号：US09111767B2

公开(公告)日：2015-08-18

申请号：US13538565

申请日：2012-06-29

申请人： Weize Chen ,  Hubert M. Bode ,  Richard J. De Souza ,  Patrice M. Parris

发明人： Weize Chen ,  Hubert M. Bode ,  Richard J. De Souza ,  Patrice M. Parris

IPC分类号： H01L27/088 ,  H01L21/02 ,  H01L27/06 ,  H01L29/861 ,  H01L29/872

CPC分类号： H01L27/0629 ,  H01L27/0288 ,  H01L29/04 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/16 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66681 ,  H01L29/7818 ,  H01L29/782 ,  H01L29/861 ,  H01L29/872

摘要： Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within area of the substrate contained by the isolation structure, and a diode circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a source region of the first conductivity type, and the diode circuit is connected between the isolation structure and the source region. The diode circuit may include one or more Schottky diodes and/or PN junction diodes. In further embodiments, the diode circuit may include one or more resistive networks in series and/or parallel with the Schottky and/or PN diode(s).

摘要翻译： 半导体器件和驱动电路的实施例包括具有第一导电类型的半导体衬底，隔离结构（包括沉陷区和掩埋层），由隔离结构包含的衬底区域内的有源器件和二极管电路。 掩埋层位于顶部衬底表面下方，并且具有第二导电类型。 沉降片区域在顶部衬底表面和掩埋层之间延伸，并且具有第二导电类型。 有源器件包括第一导电类型的源极区域，二极管电路连接在隔离结构和源极区域之间。 二极管电路可以包括一个或多个肖特基二极管和/或PN结二极管。 在另外的实施例中，二极管电路可以包括与肖特基和/或PN二极管串联和/或并联的一个或多个电阻网络。

公开(公告)号：US20140001548A1

公开(公告)日：2014-01-02

申请号：US13671503

申请日：2012-11-07

申请人： WEIZE CHEN ,  Hubert M. Bode ,  Richard J. De Souza ,  Patrice M. Parris

发明人： WEIZE CHEN ,  Hubert M. Bode ,  Richard J. De Souza ,  Patrice M. Parris

IPC分类号： H01L29/78 ,  H01L21/76

CPC分类号： H01L27/0727 ,  H01L21/761 ,  H01L29/66143 ,  H01L29/66681

摘要： Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within area of the substrate contained by the isolation structure, and a diode circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a body region of the second conductivity type, and the diode circuit is connected between the isolation structure and the body region. The diode circuit may include one or more Schottky diodes and/or PN junction diodes. In further embodiments, the diode circuit may include one or more resistive networks in series and/or parallel with the Schottky and/or PN diode(s).

摘要翻译： 半导体器件和驱动电路的实施例包括具有第一导电类型的半导体衬底，隔离结构（包括沉陷区和掩埋层），由隔离结构包含的衬底区域内的有源器件和二极管电路。 掩埋层位于顶部衬底表面下方，并且具有第二导电类型。 沉降片区域在顶部衬底表面和掩埋层之间延伸，并且具有第二导电类型。 有源器件包括第二导电类型的体区，并且二极管电路连接在隔离结构和体区之间。 二极管电路可以包括一个或多个肖特基二极管和/或PN结二极管。 在另外的实施例中，二极管电路可以包括与肖特基和/或PN二极管串联和/或并联的一个或多个电阻网络。

公开(公告)号：US09704853B2

公开(公告)日：2017-07-11

申请号：US13671506

申请日：2012-11-07

申请人： Hubert M. Bode ,  Weize Chen ,  Richard J. De Souza ,  Patrice M. Parris

发明人： Hubert M. Bode ,  Weize Chen ,  Richard J. De Souza ,  Patrice M. Parris

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L27/06 ,  H01L21/761 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L27/092

CPC分类号： H01L27/04 ,  H01L21/02381 ,  H01L21/761 ,  H01L27/0629 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/0869 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/66659 ,  H01L29/66689 ,  H01L29/7817 ,  H01L29/7835

摘要： Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within a portion of the substrate contained by the isolation structure, and a resistor circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a body region, which is separated from the isolation structure by a portion of the semiconductor substrate having the first conductivity type. The resistor circuit is connected between the isolation structure and the body region. The resistor circuit may include one or more resistor networks and, optionally, a Schottky diode and/or one or more PN diode(s) in series and/or parallel with the resistor network(s).

公开(公告)号：US09129990B2

公开(公告)日：2015-09-08

申请号：US13538529

申请日：2012-06-29

申请人： Weize Chen ,  Hubert M. Bode ,  Richard J. De Souza ,  Patrice M. Parris

发明人： Weize Chen ,  Hubert M. Bode ,  Richard J. De Souza ,  Patrice M. Parris

IPC分类号： H01L27/088 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L27/06 ,  H01L21/761 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H03K17/687 ,  H03K17/74

CPC分类号： H01L21/823481 ,  H01L21/761 ,  H01L21/823418 ,  H01L27/0629 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66659 ,  H01L29/7835 ,  H03K17/6871 ,  H03K17/74 ,  H03K2217/0018 ,  H03K2217/0036

摘要： Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within area of the substrate contained by the isolation structure, and a diode circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a drain region of the second conductivity type, and the diode circuit is connected between the isolation structure and the drain region. The diode circuit may include one or more Schottky diodes and/or PN junction diodes. In further embodiments, the diode circuit may include one or more resistive networks in series and/or parallel with the Schottky and/or PN diode(s).

摘要翻译： 半导体器件和驱动电路的实施例包括具有第一导电类型的半导体衬底，隔离结构（包括沉陷区和掩埋层），由隔离结构包含的衬底区域内的有源器件和二极管电路。 掩埋层位于顶部衬底表面下方，并且具有第二导电类型。 沉降片区域在顶部衬底表面和掩埋层之间延伸，并且具有第二导电类型。 有源器件包括第二导电类型的漏极区域，二极管电路连接在隔离结构和漏极区域之间。 二极管电路可以包括一个或多个肖特基二极管和/或PN结二极管。 在另外的实施例中，二极管电路可以包括与肖特基和/或PN二极管串联和/或并联的一个或多个电阻网络。