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    Static resistant reticle
    1.
    发明授权
    Static resistant reticle 失效
    防静电标线

    公开(公告)号：US06180291B2

    公开(公告)日：2001-01-30

    申请号：US09235254

    申请日：1999-01-22

    申请人： Andrew Bessy ,  James P. Doyle ,  Vaughn P. Gross ,  C. Richard Guarnieri ,  Rick J. Heh ,  Kenneth D. Murray ,  James L. Speidell

    发明人： Andrew Bessy ,  James P. Doyle ,  Vaughn P. Gross ,  C. Richard Guarnieri ,  Rick J. Heh ,  Kenneth D. Murray ,  James L. Speidell

    IPC分类号： G03F900

    CPC分类号： G03F1/40 ,  G03F1/48

    摘要： A static resistant reticle for use in photolithography having optimal transmission and reduced electrostatic discharge. The reticle comprises a substrate, a patterning layer, and two layers of material having a first refractive index and a second refractive index wherein the first refractive index is greater than the second refractive index and at least one of the layers is conductive. The refractive indices and thickness of the layers are matched to create an anti-reflective coating. The anti-reflective coating optimizes transmission of light through the reticle substrate to about 98.0% to about 99.5% at a wavelength of about 360 nm to about 370 nm. The conductivity of at least one of the layers reduces electrostatic discharge further improving delineation of the pattern projected onto a silicon wafer of a semiconductor device. Preferably, the anti-reflective coating comprises two or more layers of cermet material. The layer of material having a first refractive index is most preferably ruthenium oxide or ruthenium oxide with alumina. The second layer of material having a second refractive index is most preferably silica. A method of fabricating a static resistant reticle, and a method of patterning a silicon wafer using the reticle of the present invention is also described.

    摘要翻译： 用于光刻的具有最佳透射和减少静电放电的抗静电掩模版。 掩模版包括衬底，图案化层和具有第一折射率和第二折射率的两层材料，其中第一折射率大于第二折射率，并且至少一层是导电的。 匹配层的折射率和厚度以产生抗反射涂层。 抗反射涂层在约360nm至约370nm的波长下优化透过标线基底的光的透过率至约98.0％至约99.5％。 这些层中的至少一层的电导率降低了静电放电，进一步改善了投影到半导体器件的硅晶片上的图案的描绘。 优选地，抗反射涂层包括两层或多层金属陶瓷材料。 具有第一折射率的材料层最优选氧化钌或氧化钌与氧化铝。 具有第二折射率的第二层材料最优选是二氧化硅。 还描述了制造防静电掩模版的方法，以及使用本发明的掩模版图案化硅晶片的方法。

    Thermoelectric coolers with enhanced structured interfaces
    3.
    发明授权
    Thermoelectric coolers with enhanced structured interfaces 有权
    具有增强结构化接口的热电冷却器

    公开(公告)号：US06384312B1

    公开(公告)日：2002-05-07

    申请号：US09731997

    申请日：2000-12-07

    申请人： Uttam Shyamalindu Ghoshal ,  Steven A. Cordes ,  David Dimilia ,  James P. Doyle ,  James L. Speidell

    发明人： Uttam Shyamalindu Ghoshal ,  Steven A. Cordes ,  David Dimilia ,  James P. Doyle ,  James L. Speidell

    IPC分类号： H01L3528

    CPC分类号： H01L35/32 ,  H01L35/30

    摘要： A thermoelectric device with enhanced structured interfaces for improved cooling efficiency is provided. In one embodiment, the thermoelectric device includes a first thermoelement comprising a supetlattice of p-type thermoelectric material and a second thermoelement comprising superlattice of n-type thermoelectric material. The first and second thermoelements are electrically coupled to each other. The first thermoelement is proximate to, without necessarily being in physical contact with, a first array of electrically conducting tips at a discrete set of points. A planer surface of the second thermoelement is proximate to, without necessarily being in physical contact with, a second array of electrically conducting tips at a discrete set of points. The electrically conducting tips are coated with a material that has the same Seebeck coefficient as the material of the nearest layer of the superlattice to the tip.

    摘要翻译： 提供了具有增强的结构化接口以提高冷却效率的热电装置。 在一个实施例中，热电装置包括包含p型热电材料的超晶格的第一热电偶和包含n型热电材料的超晶格的第二热电偶。 第一和第二热电偶彼此电耦合。 第一热电偶在离散的一组点处接近于不一定与物理接触的第一导电尖端阵列。 第二热电元件的平面表面在离散的一组点处接近而不一定与第二阵列导电尖端物理接触。 导电尖端涂覆有与尖端的超晶格最近层的材料具有相同的塞贝克系数的材料。

    Laser methods for circuit repair on integrated circuits and substrates
    5.
    发明授权
    Laser methods for circuit repair on integrated circuits and substrates 失效
    用于集成电路和基板的电路修复的激光方法

    公开(公告)号：US5171709A

    公开(公告)日：1992-12-15

    申请号：US770838

    申请日：1991-10-04

    申请人： John J. Donelon ,  James P. Doyle ,  Jerry E. Hurst, Jr. ,  Stephen M. Rossnagel

    发明人： John J. Donelon ,  James P. Doyle ,  Jerry E. Hurst, Jr. ,  Stephen M. Rossnagel

    IPC分类号： H01L21/48 ,  H01L21/768 ,  H05K3/18 ,  H05K3/22

    CPC分类号： H05K3/225 ,  H01L21/4846 ,  H01L21/76894 ,  H05K2203/107 ,  H05K2203/1136 ,  H05K2203/173 ,  H05K3/182

    摘要： The present invention relates to a method of accessing and repairing electrical opens in conducting metal lines on a semiconductor chip or other substrate using a thin conductive layer formed within the surface of a substrate and laser plating techniques. What has been described is a maskless means of repairing discontinuities in a conductor disposed on the surface of a substrate wherein the surface is locally irradiated to form a reversible carbonaceous layer thereon. This reversible carbonaceous layer acts as a base for electrodeless deposition of a metal to form a bridge across the discontinuity by laser-enhanced exchange plating or other suitable methods. Further, a means of accessing and repairing a discontinuity buried by a cover layer of an insulating or passivating material is described, wherein access to the discontinuity is provided by ablating away the cover layer using a pulsed excimer laser at a first power level.

    摘要翻译： 本发明涉及使用形成在基板表面内的薄导电层和激光镀覆技术来访问和修复在半导体芯片或其它基板上的导电金属线路中的电气开口的方法。 已经描述的是在设置在衬底的表面上的导体中修复不连续性的无掩模方法，其中局部照射表面以在其上形成可逆碳质层。 这种可逆的碳质层用作金属的无电极沉积的基底，以通过激光增强交换电镀或其它合适的方法跨越不连续形成桥。 此外，描述了访问和修复由绝缘或钝化材料的覆盖层掩埋的不连续性的方法，其中通过在第一功率水平下使用脉冲准分子激光器去除覆盖层来提供对不连续性的访问。