公开(公告)号：US20060113489A1

公开(公告)日：2006-06-01

申请号：US11000023

申请日：2004-11-30

Applicant: Andrew Ray ,  Michael Graf

Inventor： Andrew Ray ,  Michael Graf

IPC: H01J37/08

CPC classification number: H01L21/265 ,  H01J37/3023 ,  H01J37/3171 ,  H01J2237/20228 ,  H01J2237/20285 ,  H01J2237/30411

Abstract: A method for optimizing an ion implantation, wherein a substrate is scanned in two dimensions through an ion beam. The method provides a process recipe comprising one or more of a current of an ion beam, a dosage of ions, and a number of substrate passes through the beam in a slow scan direction. The beam is profiled based on the process recipe, and a size of the beam is determined. One of a plurality of differing scan speeds in a fast scan direction is selected, based on a desired uniformity of the implantation and the process recipe. The process recipe is controlled, based on one or more of the desired uniformity, a throughput time for the substrate, a desired minimum ion beam current, and one or more substrate conditions. One of a plurality of speeds in a slow scan direction is selected, based on the dosage of the implantation.

Abstract translation: 一种用于优化离子注入的方法，其中通过离子束在两维中扫描基底。 该方法提供了包括离子束的电流，离子的剂量和数量的衬底中的一种或多种在慢扫描方向上通过光束的工艺配方。 根据工艺配方对梁进行成型，确定梁的尺寸。 基于植入和工艺配方的期望均匀性，选择快速扫描方向上的多个不同扫描速度之一。 基于所需的均匀性，基底的生产时间，期望的最小离子束电流和一个或多个基底条件中的一个或多个来控制工艺配方。 基于植入的剂量来选择慢扫描方向上的多个速度之一。

公开(公告)号：US20050189500A1

公开(公告)日：2005-09-01

申请号：US10788861

申请日：2004-02-27

Applicant: Michael Graf ,  Andrew Ray

Inventor： Michael Graf ,  Andrew Ray

IPC: H01J37/147 ,  H01J37/304 ,  H01J37/317

CPC classification number: H01J37/304 ,  H01J37/3171 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31703

Abstract: The present invention is directed to modulating ion beam current in an ion implantation system to mitigate non-uniform ion implantations, for example. Multiple arrangements are revealed for modulating the intensity of the ion beam. For example, the volume or number of ions within the beam can be altered by biasing one or more different elements downstream of the ion source. Similarly, the dosage of ions within the ion beam can also be manipulated by controlling elements more closely associated with the ion source. In this manner, the implantation process can be regulated so that the wafer can be implanted with a more uniform coating of ions.

Abstract translation: 本发明涉及在离子注入系统中调制离子束电流以减轻例如不均匀的离子注入。 显示了用于调制离子束强度的多种布置。 例如，可以通过在离子源下游偏置一个或多个不同元件来改变束内的离子的体积或数量。 类似地，离子束内离子的剂量也可以通过控制与离子源更紧密相关的元素来操纵。 以这种方式，可以调节注入工艺，使得可以以更均匀的离子涂层注入晶片。

公开(公告)号：US20060243920A1

公开(公告)日：2006-11-02

申请号：US11479652

申请日：2006-06-30

Applicant: Andrew Ray ,  Michael Graf

Inventor： Andrew Ray ,  Michael Graf

IPC: H01J37/08

CPC classification number: H01L21/265 ,  H01J37/3023 ,  H01J37/3171 ,  H01J2237/20228 ,  H01J2237/20285 ,  H01J2237/30411

Abstract: A method for optimizing an ion implantation, wherein a substrate is scanned in two dimensions through an ion beam. The method provides a process recipe comprising one or more of a current of an ion beam, a dosage of ions, and a number of substrate passes through the beam in a slow scan direction. The beam is profiled based on the process recipe, and a size of the beam is determined. One of a plurality of differing scan speeds in a fast scan direction is selected, based on a desired uniformity of the implantation and the process recipe. The process recipe is controlled, based on one or more of the desired uniformity, a throughput time for the substrate, a desired minimum ion beam current, and one or more substrate conditions. One of a plurality of speeds in a slow scan direction is selected, based on the dosage of the implantation.

Abstract translation: 一种用于优化离子注入的方法，其中通过离子束在两维中扫描基底。 该方法提供了包括离子束的电流，离子的剂量和数量的衬底中的一种或多种在慢扫描方向上通过光束的工艺配方。 根据工艺配方对梁进行成型，确定梁的尺寸。 基于植入和工艺配方的期望均匀性，选择快速扫描方向上的多个不同扫描速度之一。 基于所需的均匀性，基底的生产时间，期望的最小离子束电流和一个或多个基底条件中的一个或多个来控制工艺配方。 基于植入的剂量来选择慢扫描方向上的多个速度之一。

公开(公告)号：US20060097196A1

公开(公告)日：2006-05-11

申请号：US10983461

申请日：2004-11-08

Applicant: Michael Graf ,  Andrew Ray

Inventor： Michael Graf ,  Andrew Ray

IPC: H01J37/317

CPC classification number: H01J37/304 ,  H01J37/20 ,  H01J37/3171 ,  H01L21/68764

Abstract: The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces one or more scan patterns on the workpiece that resemble the size, shape and/or other dimensional aspects of the workpiece. Further, the scan patterns are interleaved with one another and can continue to be produced until the entirety of the workpiece is uniformly implanted with ions.

Abstract translation: 本发明涉及以串联注入工艺将工件放置在工件上，以便在工件上产生类似于工件的尺寸，形状和/或其他尺寸方面的一个或多个扫描图案。 此外，扫描图案彼此交错并且可以继续地被产生，直到整个工件被均匀地注入离子。

公开(公告)号：US20100275776A1

公开(公告)日：2010-11-04

申请号：US12434046

申请日：2009-05-01

Applicant: Andrew Ray

Inventor： Andrew Ray

IPC: B01D46/46 ,  B01D46/04

CPC classification number: B01D46/0068 ,  B01D46/04 ,  B01D46/42

Abstract: A system for cleaning at least one filter in a baghouse and an associated method for providing the system. The at least one filter separate a dirty gas chamber from a clean gas chamber, and filters at least one substance from a gas. The system includes a supply of compressed air and a blowpipe to direct the air at the at least one filter to dislodge a collected amount of the at least one substance from the at least one filter. The blowpipe has a cross-sectional flow area through which the compressed air flows. A valve controls provision of the compressed air. The valve has a cross-sectional flow area though which the compressed gas flows. The cross-sectional area of the valve is smaller than the cross-sectional area of the blowpipe to provide for air pressure at the valve to be greater than air pressure at the blowpipe.

Abstract translation: 用于清洁袋式清洁器中的至少一个过滤器的系统和用于提供系统的相关方法。 至少一个过滤器将脏气体室与清洁气体室分离，并从气体中过滤至少一种物质。 该系统包括供应压缩空气和吹管，以引导至少一个过滤器处的空气以从所述至少一个过滤器中移走所收集的至少一种物质的量。 吹气管具有压缩空气流过的横截面流动区域。 阀控制压缩空气的供应。 该阀具有压缩气体流过的横截面流动面积。 阀的横截面面积小于吹管的横截面积，以使阀处的空气压力大于吹管处的空气压力。

公开(公告)号：US20060061662A1

公开(公告)日：2006-03-23

申请号：US10945185

申请日：2004-09-20

Applicant: Andrew Ray

Inventor： Andrew Ray

IPC: H04N5/232

CPC classification number: H04N1/00127 ,  H04M1/274508 ,  H04M1/72555 ,  H04M2250/52 ,  H04N1/00307 ,  H04N5/765 ,  H04N5/772 ,  H04N5/907 ,  H04N7/147 ,  H04N9/8205

Abstract: A communication device (100, 200) is adapted to participate in a primary communication on a communication channel with at least one other communication device (250); and simultaneously transmit an image to the at least one other communication device (250) or and alternative communication device using the communication channel or an alternative communication channel.

Abstract translation: 通信设备（100,200）适于参与与至少一个其他通信设备（250）的通信信道上的主要通信; 并且同时将图像发送到至少一个其他通信设备（250），或者使用所述通信信道或替代通信信道来发送替代通信设备。

公开(公告)号：US20050161619A1

公开(公告)日：2005-07-28

申请号：US11006840

申请日：2004-12-08

Applicant: Andrew Ray

Inventor： Andrew Ray

IPC: H01J37/147 ,  H01J37/317 ,  H01L21/265 ,  H01J37/304

CPC classification number: H01L21/26513 ,  B32B3/02 ,  H01J37/3171 ,  H01J2237/1501 ,  H01J2237/31701 ,  H01L21/26586 ,  Y10S414/135 ,  Y10T428/21

Abstract: The present invention is directed to accounting for crystal cut error data in ion implantation systems, thereby facilitating more accurate ion implantation. One or more aspects of the invention also consider possible shadowing effects that can result from features formed on the surface of a wafer being doped. According to one or more aspects of the invention, crystal cut error data and optionally feature data also are periodically fed forward in one or more ion implantation stages or systems to ascertain how to re-orient the ion beam with respect to the workpiece to achieve desired implantation results.

Abstract translation: 本发明旨在说明离子注入系统中的晶体切割误差数据，从而促进更精确的离子注入。 本发明的一个或多个方面还考虑可能由在被掺杂的晶片的表面上形成的特征产生的阴影效应。 根据本发明的一个或多个方面，晶体切割误差数据和任选的特征数据也在一个或多个离子注入阶段或系统中周期性地向前馈送，以确定如何相对于工件重新定向离子束以实现期望的 植入结果。

公开(公告)号：US08029607B2

公开(公告)日：2011-10-04

申请号：US12434046

申请日：2009-05-01

Applicant: Andrew Ray

Inventor： Andrew Ray

IPC: B01D46/04

CPC classification number: B01D46/0068 ,  B01D46/04 ,  B01D46/42

Abstract: A system for cleaning at least one filter in a baghouse and an associated method for providing the system. The at least one filter separate a dirty gas chamber from a clean gas chamber, and filters at least one substance from a gas. The system includes a supply of compressed air and a blowpipe to direct the air at the at least one filter to dislodge a collected amount of the at least one substance from the at least one filter. The blowpipe has a cross-sectional flow area through which the compressed air flows. A valve controls provision of the compressed air. The valve has a cross-sectional flow area though which the compressed gas flows. The cross-sectional area of the valve is smaller than the cross-sectional area of the blowpipe to provide for air pressure at the valve to be greater than air pressure at the blowpipe.

Abstract translation: 用于清洁袋式清洁器中的至少一个过滤器的系统和用于提供系统的相关方法。 至少一个过滤器将脏气体室与清洁气体室分离，并从气体中过滤至少一种物质。 该系统包括供应压缩空气和吹管，以引导至少一个过滤器处的空气以从所述至少一个过滤器中移走所收集的至少一种物质的量。 吹气管具有压缩空气流过的横截面流动区域。 阀控制压缩空气的供应。 该阀具有压缩气体流过的横截面流动面积。 阀的横截面面积小于吹管的横截面积，以使阀处的空气压力大于吹管处的空气压力。

公开(公告)号：US20050251279A1

公开(公告)日：2005-11-10

申请号：US10830734

申请日：2004-04-23

Applicant: Andrew Ray

Inventor： Andrew Ray

IPC: H01L21/00 ,  H01L21/66 ,  G01R31/26 ,  G06F19/00 ,  H01L21/76

CPC classification number: H01L21/67259 ,  Y10S414/135

Abstract: The present invention is directed to aligning wafers within semiconductor fabrication tools. More particularly, one or more aspects of the present invention pertain to quickly and efficiently finding an alignment marking, such as an alignment notch, on a wafer to allow the wafer to be appropriately oriented within an alignment tool. Unlike conventional systems, the notch is located without firmly holding and spinning or rotating the wafer. Exposure to considerable backside contaminants is thereby mitigated and the complexity and/or cost associated with aligning the wafer is thereby reduced.

Abstract translation: 本发明涉及在半导体制造工具内对准晶片。 更具体地，本发明的一个或多个方面涉及在晶片上快速有效地找到对准标记，例如对准凹口，以允许晶片在对准工具内被适当地取向。 不同于传统的系统，凹槽位于没有牢固地保持和旋转或旋转晶片的位置。 从而减轻了相当大的背面污染物的暴露，从而降低了与对准晶片相关的复杂性和/或成本。

公开(公告)号：US20060219955A1

公开(公告)日：2006-10-05

申请号：US11390039

申请日：2006-03-27

Applicant: Andrew Ray

Inventor： Andrew Ray

IPC: H01J37/08

CPC classification number: H01J37/244 ,  H01J37/304 ,  H01J37/3045 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24542 ,  H01J2237/30405 ,  H01J2237/30411 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: A system, apparatus, and method for determining position and two angles of incidence of an ion beam to a surface of a workpiece is provided. A measurement apparatus having an elongate first and second sensor is coupled to a translation mechanism, wherein the first sensor extends in a first direction perpendicular to the translation, and wherein the second sensor extends at an oblique angle to the first sensor. The first and second elongate sensors sense one or more characteristics of the ion beam as the first and second sensors pass through the ion beam at a respective first time and a second time, and a controller is operable to determine a position and first and second angle of incidence of the ion beam, based, at least in part, on the one or more characteristics of the ion beam sensed by the first sensor and second sensor at the first and second times.

Abstract translation: 提供了一种用于确定离子束到工件表面的位置和两个入射角的系统，装置和方法。 具有细长的第一和第二传感器的测量装置耦合到平移机构，其中第一传感器沿垂直于平移的第一方向延伸，并且其中第二传感器以与第一传感器成倾斜的角度延伸。 当第一和第二传感器在相应的第一时间和第二时间通过离子束时，第一和第二细长传感器感测离子束的一个或多个特性，并且控制器可操作以确定位置和第一和第二角度 至少部分地基于由第一传感器和第二传感器在第一次和第二次感测的离子束的一个或多个特性。