Method and apparatus for milling copper interconnects in a charged particle beam system
    5.
    发明授权
    Method and apparatus for milling copper interconnects in a charged particle beam system 有权
    用于在带电粒子束系统中铣削铜互连的方法和装置

    公开(公告)号:US06322672B1

    公开(公告)日:2001-11-27

    申请号:US09522561

    申请日:2000-03-10

    IPC分类号: C23C1434

    摘要: A method of enhancing charged particle beam etching particularly suitable for copper interconnects, includes milling at non-contiguous locations to prevent the formation or propagation of an etch-resistant region within the rastered area. Two or more milling boxes are typically performed, one or more of the boxes having pixel spacing greater than the spot size, with the last box using a conventional pixel spacing (default mill) smaller than the spot size to produce a uniform, planar floor of the etched area.

    摘要翻译: 增强特别适用于铜互连的带电粒子束蚀刻的方法包括在非连续位置进行研磨以防止在受侵蚀区域内的耐蚀刻区域的形成或传播。 通常执行两个或更多个铣削箱,一个或多个盒的像素间距大于光斑尺寸,最后一个盒使用小于光斑尺寸的常规像素间隔(默认轧机),以产生均匀的平面底板 蚀刻区域。

    Process for preparing indene acetic acids
    7.
    发明授权
    Process for preparing indene acetic acids 失效
    制备茚乙酸的方法

    公开(公告)号:US3970693A

    公开(公告)日:1976-07-20

    申请号:US486031

    申请日:1974-07-05

    摘要: Process for preparing 5-fluoro-2-methyl-1-(p-methylsulfinylbenzylidene)-indene-3-acetic acid by reacting fluorobenzene with an acid halide, to form an indanone, reaction of the indanone with a methylthio (or methylsulfinyl) benzyl compound to form 5-fluoro-2-methyl-1-(p-methylthiobenzyl) or (p-methylsulfinylbenzyl)-indene and reacting said indene with a glyoxylic acid.This invention relates to new processes for preparing 5-fluoro-2-methyl-1-(p-methylsulfinylbenzylidene)-indene-3-acetic acid, to intermediates thereof and processes for said intermediates.

    摘要翻译: 通过氟代苯与酰卤反应制备5-氟-2-甲基-1-(对甲基亚磺酰亚苄基) - 茚-3-乙酸的方法,以形成茚满酮,茚满酮与甲硫基(或甲基亚磺酰基)苄基 化合物形成5-氟-2-甲基-1-(对甲基硫代苄基)或(对甲基亚磺酰基苄基) - 茚并使所述茚与乙醛酸反应。

    Apparatus and method for reducing differential sputter rates
    9.
    发明授权
    Apparatus and method for reducing differential sputter rates 有权
    降低差异溅射速率的装置和方法

    公开(公告)号:US06641705B2

    公开(公告)日:2003-11-04

    申请号:US09818988

    申请日:2001-03-27

    IPC分类号: C23C1434

    摘要: A charged particle beam uniformly removes material, particularly crystalline material, from an area of a target by compensating for or altering the crystal orientation or structure of the material to be removed. The invention is particularly suited for FIB micromachining of copper-based crystalline structures. Uniformity of material removal can be improved, for example, by passing incoming ions through a sacrificial layer formed on the surface of the material to be removed. The sacrificial layer is removed along with the material being milled. Uniformity of removal can also be improved by changing the morphology of the material to be removed, for example, by disrupting its crystal structure or by altering its topography.

    摘要翻译: 带电粒子束通过补偿或改变要去除的材料的晶体取向或结构来均匀地从靶的区域去除材料,特别是结晶材料。 本发明特别适用于铜基晶体结构的FIB微加工。 可以改善材料去除的均匀性,例如,通过将进入的离子通过形成在要去除的材料的表面上的牺牲层。 牺牲层与被研磨的材料一起被去除。 也可以通过改变要除去的材料的形态,例如通过破坏其晶体结构或改变其形貌来改善均匀性。