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公开(公告)号：US07250617B2
公开(公告)日：2007-07-31
申请号：US11056445
申请日：2005-02-11
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/24405 , H01J2237/304
摘要： An ion beam neutral detector system, an ion implanter system including the detector system and a method of detecting ion beam neutrals that ensures an ion implant is meeting contamination requirements are disclosed. The detector includes an energy contamination monitor positioned with in an ion implanter system. A method of the invention includes implanting the workpiece using an ion beam, and periodically detecting ion beam neutrals in the ion beam such that adjustments to the ion implanter system can be made for optimization.
摘要翻译： 公开了一种离子束中性检测器系统，包括检测器系统的离子注入机系统和检测离子束中性物质的方法，其确保离子注入满足污染要求。 检测器包括一个位于离子注入机系统中的能量污染监测器。 本发明的方法包括使用离子束注入工件，并周期性地检测离子束中的离子束中性粒子，使得可以对离子注入机系统进行优化调整。
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公开(公告)号：US20070045557A1
公开(公告)日：2007-03-01
申请号：US11212099
申请日：2005-08-26
IPC分类号： H01J3/14
CPC分类号： H01J37/3171 , H01J37/15
摘要： A technique for implementing a variable aperture lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as a variable aperture lens. The variable aperture lens may comprise a first electrode element. The variable aperture lens may also comprise a second electrode element. The variable aperture lens may further comprise a driver assembly coupled to at least one of the first and the second electrode elements, wherein the driver assembly alters an aperture between the first and the second electrode elements based on a geometry of an ion beam.
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公开(公告)号：US07109499B2
公开(公告)日：2006-09-19
申请号：US10981887
申请日：2004-11-05
IPC分类号： H01J37/04
CPC分类号： G01T1/29 , H01J37/304 , H01J37/3171
摘要： Methods and apparatus are provided for measuring a profile of an ion beam. The apparatus includes an array of beam current sensors, each producing a sensor signal in response to incident ions of the ion beam, a translation mechanism configured to translate the array of beam current sensors along a translation path with respect to the ion beam, and a controller configured to acquire the sensor signals produced by the beam current sensors at a plurality of positions along the translation path, wherein the acquired sensor signals are representative of a two-dimensional profile of the ion beam.
摘要翻译： 提供了用于测量离子束轮廓的方法和装置。 该装置包括一束束电流传感器，每个射束电流传感器响应于离子束的入射离子产生传感器信号;平移机构，被配置为沿着相对于离子束的平移路径平移束电流传感器阵列;以及 控制器被配置为在沿着平移路径的多个位置处获取由束电流传感器产生的传感器信号，其中所获取的传感器信号表示离子束的二维轮廓。
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4.发明授权公开(公告)号：US07279687B2
公开(公告)日：2007-10-09
申请号：US11212099
申请日：2005-08-26
IPC分类号： H01J37/147 , H01J37/15
CPC分类号： H01J37/3171 , H01J37/15
摘要： A technique for implementing a variable aperture lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as a variable aperture lens. The variable aperture lens may comprise a first electrode element. The variable aperture lens may also comprise a second electrode element. The variable aperture lens may further comprise a driver assembly coupled to at least one of the first and the second electrode elements, wherein the driver assembly alters an aperture between the first and the second electrode elements based on a geometry of an ion beam.
摘要翻译： 公开了一种用于在离子注入机中实现可变孔径透镜的技术。 在一个特定的示例性实施例中，该技术可以被实现为可变孔径透镜。 可变孔径透镜可以包括第一电极元件。 可变孔径透镜还可以包括第二电极元件。 可变孔径透镜还可以包括耦合到第一和第二电极元件中的至少一个的驱动器组件，其中驱动器组件基于离子束的几何形状改变第一和第二电极元件之间的孔。
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公开(公告)号：US07655922B2
公开(公告)日：2010-02-02
申请号：US11568000
申请日：2006-12-07
申请人： Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
发明人： Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/026 , H01J2237/0041 , H01J2237/055 , H01J2237/152 , H01J2237/31701
摘要： Techniques for confining electrons in an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for confining electrons in an ion implanter. The apparatus may comprise a first array of magnets and a second array of magnets positioned along at least a portion of a beam path, the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side. At least one magnet in the first array may have a pole facing an opposite pole of a corresponding magnet in the second array.
摘要翻译： 公开了将电子限制在离子注入机中的技术。 在一个特定的示例性实施例中，技术可以被实现为用于将电子限制在离子注入机中的装置。 该装置可以包括第一磁体阵列和沿着光束路径的至少一部分定位的第二磁体阵列，第一阵列位于光束路径的第一侧上，第二阵列位于光束的第二侧上 路径，第一面反对第二面。 第一阵列中的至少一个磁体可以具有面对第二阵列中相应磁体的相对极的极。
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公开(公告)号：US20080135775A1
公开(公告)日：2008-06-12
申请号：US11568000
申请日：2006-12-07
申请人： Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
发明人： Donna L. Smatlak , Gordon C. Angel , Rajesh Dorai
IPC分类号： H01J1/50
CPC分类号： H01J37/3171 , H01J37/026 , H01J2237/0041 , H01J2237/055 , H01J2237/152 , H01J2237/31701
摘要： Techniques for confining electrons in an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for confining electrons in an ion implanter. The apparatus may comprise a first array of magnets and a second array of magnets positioned along at least a portion of a beam path, the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side. At least one magnet in the first array may have a pole facing an opposite pole of a corresponding magnet in the second array.
摘要翻译： 公开了将电子限制在离子注入机中的技术。 在一个特定的示例性实施例中，技术可以被实现为用于将电子限制在离子注入机中的装置。 该装置可以包括第一磁体阵列和沿着光束路径的至少一部分定位的第二磁体阵列，第一阵列位于光束路径的第一侧上，第二阵列位于光束的第二侧上 路径，第一面反对第二面。 第一阵列中的至少一个磁体可以具有面对第二阵列中相应磁体的相对极的极。
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7.发明授权Wafer-scanning ion implanter having fast beam deflection apparatus for beam glitch recovery 有权晶圆扫描离子注入机具有快速光束偏转装置，用于光束毛刺恢复公开(公告)号：US07005657B1
公开(公告)日：2006-02-28
申请号：US11051018
申请日：2005-02-04
申请人： Russell J. Low , Gordon C. Angel
发明人： Russell J. Low , Gordon C. Angel
IPC分类号： H01J37/317
CPC分类号： H01J37/304 , H01J37/147 , H01J37/3171 , H01J2237/043 , H01J2237/15 , H01J2237/1501 , H01J2237/20228 , H01J2237/3045 , H01J2237/30472
摘要： An analyzer module of an ion implanter includes beam deflection apparatus adjacent to a resolving opening from which a terminal ion beam portion of an ion beam emanates. In response to a beam deflection voltage of a first value of substantially zero volts in a first operating condition, the beam deflection apparatus directs a source ion beam portion of the ion beam toward the resolving opening to generate the terminal ion beam portion. When the beam deflection voltage has a high second value in a second operating condition, the beam deflection apparatus directs the species of the source ion beam portion away from the resolving opening such that the terminal ion beam portion is substantially extinguished. Beam control circuitry is operative during the second operating condition to transition the ion implanter to the first operating condition by rapidly switching the beam deflection voltage from the second value to the first value. An implantation method employs the features of the implanter to recover from glitches during implantation and thereby improve the yield of implanted wafers.
摘要翻译： 离子注入机的分析器模块包括与分离开口相邻的光束偏转装置，离子束的末端离子束部分从该分离开口发射。 响应于在第一操作条件下基本为零伏的第一值的光束偏转电压，光束偏转装置将离子束的源离子束部分引向分辨开口以产生端子离子束部分。 当光束偏转电压在第二操作条件下具有高的第二值时，光束偏转装置引导源离子束部分的种类远离分辨开口，使得末端离子束部分基本上熄灭。 光束控制电路在第二操作条件期间操作，以通过将光束偏转电压从第二值快速切换到第一值来将离子注入机转换到第一操作状态。 植入方法采用注入机的特征从植入期间的毛刺恢复，从而提高植入晶片的产量。
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