Air platen for leading edge and trailing edge control
    2.
    发明授权
    Air platen for leading edge and trailing edge control 失效
    用于前缘和后缘控制的气压盘

    公开(公告)号:US06761626B2

    公开(公告)日:2004-07-13

    申请号:US10037452

    申请日:2001-12-20

    IPC分类号: B24B722

    CPC分类号: B24B21/10 B24B37/04

    摘要: An air platen assembly is described and includes a platen that has a plurality of concentric rings. Each of the rings has a plurality of openings in order to provide a cushion of air to a CMP belt. At least one of the rings extends beyond an outer edge of a wafer to be planarized by the CMP belt. A support is attached with the platen and has a plurality of air ports for pressurized air to pass to the rings of the platen. A gasket is positioned between the support and the platen and has a plurality of cutouts that align with the openings and the air ports. A base is also included and supports the support.

    摘要翻译: 描述了空气压板组件,并且包括具有多个同心环的压板。 每个环具有多个开口,以便向CMP带提供空气缓冲。 至少一个环延伸超过晶片的外边缘以由CMP带平坦化。 支撑件与压板连接,并且具有多个用于加压空气的空气端口以传递到压板的环。 垫片定位在支撑件和压板之间,并且具有与开口和空气端口对准的多个切口。 还包括基地并支持支持。

    Molded end point detection window for chemical mechanical planarization
    3.
    发明授权
    Molded end point detection window for chemical mechanical planarization 失效
    用于化学机械平面化的模制端点检测窗口

    公开(公告)号:US06806100B1

    公开(公告)日:2004-10-19

    申请号:US10330519

    申请日:2002-12-24

    IPC分类号: H01L2100

    CPC分类号: B24B37/205 B24B21/04

    摘要: An optical window structure for use in chemical mechanical planarization is provided. The optical window structure includes a polishing pad and an optical window opening in the polishing pad. The optical window structure also includes a molded optical window attached to an underside of the polishing pad, a molded portion of the optical window at least partially protruding into the optical window opening in the polishing pad.

    摘要翻译: 提供了一种用于化学机械平面化的光学窗口结构。 光学窗结构包括抛光垫和抛光垫中的光学窗口。 光学窗口结构还包括附接到抛光垫的下侧的模制光学窗口,光学窗口的模制部分至少部分地突出到抛光垫的光学窗口中。

    Unsupported chemical mechanical polishing belt
    4.
    发明授权
    Unsupported chemical mechanical polishing belt 有权
    不支持化学机械抛光带

    公开(公告)号:US06406363B1

    公开(公告)日:2002-06-18

    申请号:US09386741

    申请日:1999-08-31

    IPC分类号: B24B2100

    摘要: A belt for polishing a workpiece such as a semiconductor wafer in a chemical mechanical polishing system includes a polymeric layer forming an endless loop and having a polishing surface on one side of the endless loop. The belt is manufactured by molding a polymeric material such as urethane in a cylindrical mold. The belt is thus made from a single layer, reducing weight, size, cost and maintenance requirements.

    摘要翻译: 用于在化学机械抛光系统中抛光诸如半导体晶片的工件的带包括形成无端环的聚合物层,并且在无端环的一侧具有抛光表面。 带通过在圆柱形模具中模制诸如聚氨酯的聚合物材料来制造。 因此,皮带由单层制成,减轻重量,尺寸,成本和维护要求。

    Methods for monitoring and controlling chemical mechanical planarization
    5.
    发明授权
    Methods for monitoring and controlling chemical mechanical planarization 失效
    化学机械平面化监测与控制方法

    公开(公告)号:US06931330B1

    公开(公告)日:2005-08-16

    申请号:US10611143

    申请日:2003-06-30

    摘要: Methods are provided for monitoring and controlling a chemical mechanical planarization (CMP) process. Relationships between motor torques and CMP process parameters are determined and utilized to provide a basis for monitoring and controlling the CMP process. Motor current measurements obtained during the CMP process are converted to motor torques to provide for use of the relationships in monitoring and controlling the CMP process. The motor current measurements and relationships are also used to determine and monitor a coefficient of friction present during the CMP process.

    摘要翻译: 提供了用于监测和控制化学机械平面化(CMP)工艺的方法。 确定和利用电机转矩和CMP工艺参数之间的关系,为监测和控制CMP工艺提供依据。 在CMP过程中获得的电机电流测量值将转换为电机转矩,以提供监测和控制CMP工艺的关系。 电机电流测量和关系也用于确定和监测CMP过程中存在的摩擦系数。

    Apparatus for controlling leading edge and trailing edge polishing
    6.
    发明授权
    Apparatus for controlling leading edge and trailing edge polishing 失效
    用于控制前缘和后缘抛光的装置

    公开(公告)号:US06729945B2

    公开(公告)日:2004-05-04

    申请号:US09823722

    申请日:2001-03-30

    IPC分类号: B24B2108

    CPC分类号: B24B37/16 B24B21/04

    摘要: A platen for use in chemical mechanical planarization (CMP) systems is disclosed. The platen is arranged below a linear polishing pad and designed to apply a controlled fluid flow to the underside of the linear polishing pad. The platen includes a leading zone containing a first plurality of output holes. The leading zone is oriented more proximate to an upstream region of the linear polishing pad. The platen also includes a trailing zone containing a second plurality of output holes. The trailing zone is oriented more proximate to a downstream region of the linear polishing pad. The leading zone and the trailing zone are independently controlled and designed to output the controlled fluid flow independently from each of the first plurality of output holes and the second plurality of output holes.

    摘要翻译: 公开了一种用于化学机械平面化(CMP)系统的压板。 压板布置在线性抛光垫的下方,并设计成将受控流体流施加到线性抛光垫的下侧。 台板包括一个包含第一多个输出孔的引导区。 前导区域更接近于线性抛光垫的上游区域。 压盘还包括包含第二多个输出孔的拖尾区域。 拖尾区域更靠近直线抛光垫的下游区域。 引导区域和拖尾区域被独立地控制和设计成独立于第一多个输出孔和第二多个输出孔中的每一个输出受控流体流动。

    Method of optimizing chemical mechanical planarization process
    7.
    发明授权
    Method of optimizing chemical mechanical planarization process 失效
    优化化学机械平面化工艺的方法

    公开(公告)号:US06315634B1

    公开(公告)日:2001-11-13

    申请号:US09680589

    申请日:2000-10-06

    IPC分类号: B24B4900

    CPC分类号: H01L21/02024 B24B37/042

    摘要: A method for determining an optimized set of polishing parameters is disclosed. a wafer is polished using one set of polishing parameters, and a first polishing result can then be determined. The wafer is then polished using a second set of polishing parameters, wherein at least one of the first polishing parameters has been changed, and a second polishing result can be determined. The first and second polishing results can then be analyzed to determine an optimized set of polishing parameters. A second wafer can then be polishing using the optimized set of polishing parameters.

    摘要翻译: 公开了一种用于确定优化的抛光参数组的方法。 使用一组抛光参数抛光晶片,然后可以确定第一抛光结果。 然后使用第二组抛光参数来抛光晶片,其中第一抛光参数中的至少一个已被改变,并且可以确定第二抛光结果。 然后可以分析第一和第二抛光结果以确定优化的一组抛光参数。 然后可以使用优化的一组抛光参数来抛光第二晶片。

    Fluid conserving platen for optimizing edge polishing
    8.
    发明授权
    Fluid conserving platen for optimizing edge polishing 失效
    流体节流板,用于优化边缘抛光

    公开(公告)号:US06790128B1

    公开(公告)日:2004-09-14

    申请号:US10112424

    申请日:2002-03-29

    IPC分类号: B24B100

    CPC分类号: B24B37/16 B24B21/04 B24B57/02

    摘要: A platen is disclosed. The platen includes a support surface for supporting a portion of a linear polishing belt during a chemical mechanical polishing (CMP) operation. The platen also includes a plurality of fluid outlets oriented throughout the support surface. The orientation defines an asymmetric pattern where each of the plurality of fluid outlets is capable of outputting a controlled fluid toward an underside of the linear polishing belt.

    摘要翻译: 公开了压盘。 压板包括用于在化学机械抛光(CMP)操作期间支撑线性抛光带的一部分的支撑表面。 压盘还包括定向在整个支撑表面上的多个流体出口。 取向限定了不对称图案,其中多个流体出口中的每一个能够将受控流体输出到线性抛光带的下侧。

    Grooved rollers for a linear chemical mechanical planarization system
    9.
    发明授权
    Grooved rollers for a linear chemical mechanical planarization system 失效
    用于线性化学机械平面化系统的沟槽辊

    公开(公告)号:US06620035B2

    公开(公告)日:2003-09-16

    申请号:US10040501

    申请日:2001-12-28

    申请人: Cangshan Xu

    发明人: Cangshan Xu

    IPC分类号: B24B722

    CPC分类号: B24B37/26 B24B21/04 B24B21/18

    摘要: In a linear chemical mechanical planarization (CMP) system, a surface of each roller of a pair of rollers is disclosed which includes a first set of grooves covering a first portion of the surface of the roller where the first set of grooves has a first pitch that angles outwardly toward a first outer edge of the roller. The surface also includes a second set of grooves covering a second portion of the surface of the roller where the second set of grooves has a second pitch that angles outwardly toward a second outer edge of the roller with the second pitch angling away from the first pitch. The surface further includes a first set of lateral channels arranged along the first portion, and a second set of lateral channels arranged along the second portion. The first set of lateral channels crosses the first set of grooves, and the second set of lateral channels crosses the second set of grooves.

    摘要翻译: 在线性化学机械平面化(CMP)系统中,公开了一对辊的每个辊的表面,其包括覆盖辊的表面的第一部分的第一组槽,其中第一组槽具有第一间距 其朝向辊的第一外边缘向外倾斜。 所述表面还包括覆盖所述辊表面的第二部分的第二组凹槽,其中所述第二组凹槽具有朝向所述辊的第二外边缘向外倾斜的第二间距,所述第二倾斜距离所述第一间距 。 表面还包括沿着第一部分布置的第一组横向通道和沿第二部分布置的第二组横向通道。 第一组横向通道与第一组凹槽交叉,第二组横向通道与第二组凹槽交叉。