摘要:
A method for manufacturing a wire sweep resistant semiconductor package provides a die attached to an interposer. The die is electrically connected to the interposer with conductive wires. A sealant is applied on the die at the conductive wires for preventing wire sweep and the sealant is free of contact with the interposer. The die, the interposer, the conductive wires, and the sealant are encapsulated in an encapsulant.
摘要:
A die is attached to a substrate and is enclosed in a heat spreader, the heat spreader having a first encapsulant guide and a heat spreader air vent in the heat spreader extending therethrough. An encapsulant encapsulates the die, the substrate, at least a portion of the heat spreader, the first encapsulant guide, and the heat spreader air vent such that the encapsulant enters the heat spreader through the first encapsulant guide and air exits the heat spreader through the heat spreader air vent, thus preventing the formation of air pockets under the heat spreader.
摘要:
A die is attached to a substrate and is enclosed in a heat spreader, the heat spreader having a first encapsulant guide and a heat spreader air vent in the heat spreader extending therethrough. An encapsulant encapsulates the die, the substrate, at least a portion of the heat spreader, the first encapsulant guide, and the heat spreader air vent such that the encapsulant enters the heat spreader through the first encapsulant guide and air exits the heat spreader through the heat spreader air vent, thus preventing the formation of air pockets under the heat spreader.
摘要:
An integrated circuit package system includes: a semiconductor chip; a stress-relieving layer on the semiconductor chip; an adhesion layer on the stress relieving layer; and electrical interconnects bonded to the adhesion layer.
摘要:
An integrated circuit package system includes: a semiconductor chip; a stress-relieving layer on the semiconductor chip; an adhesion layer on the stress relieving layer; and electrical interconnects bonded to the adhesion layer.
摘要:
An integrated circuit package system includes: providing an integrated circuit wafer having an active side and a backside; forming a stress-relieving layer on the backside; forming an adhesion layer on the stress-relieving layer; dicing the integrated circuit wafer into a semiconductor chip with the stress-relieving layer and the adhesion layer on the backside of the semiconductor chip; and mounting the semiconductor chip over electrical interconnects.
摘要:
An integrated circuit package system includes: providing an integrated circuit wafer having an active side and a backside; forming a stress-relieving layer on the backside; forming an adhesion layer on the stress-relieving layer; dicing the integrated circuit wafer into a semiconductor chip with the stress-relieving layer and the adhesion layer on the backside of the semiconductor chip; and mounting the semiconductor chip over electrical interconnects.
摘要:
A method for manufacturing a wire sweep resistant semiconductor package provides a die attached to an interposer. The die is electrically connected to the interposer with conductive wires. A sealant is applied to the conductive wires and optionally the die to prevent wire sweep, the sealant being applied free of contact with the interposer. The die, the interposer, the conductive wires, and the sealant are enclosed in an encapsulant.
摘要:
A method for manufacturing a wire sweep resistant semiconductor package provides a die attached to an interposer. The die is electrically connected to the interposer with conductive wires. A sealant is applied on the die at the conductive wires for preventing wire sweep and the sealant is free of contact with the interposer. The die, the interposer, the conductive wires, and the sealant are encapsulated in an encapsulant.
摘要:
A semiconductor device has a temporary layer, such as a dam material or adhesive layer, formed over a carrier. A plurality of recesses is formed in the temporary layer. A first semiconductor die is mounted within the recesses of the temporary layer. An encapsulant is deposited over the first semiconductor die and temporary layer. The encapsulant extends into the recesses in the temporary layer. The carrier and temporary layer are removed to form recessed interconnect areas around the first semiconductor die. Alternatively, the recessed interconnect areas can be formed the carrier or encapsulant. Multiple steps can be formed in the recesses of the temporary layer. A conductive layer is formed over the first semiconductor die and encapsulant and into the recessed interconnect areas. A second semiconductor die can be mounted on the first semiconductor die. The semiconductor device can be integrated into PiP and Fi-PoP arrangements.