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16 条记录 (耗时 0.025 秒)

    Extrusion of polymer waveguides onto surfaces
    1.
    发明授权
    Extrusion of polymer waveguides onto surfaces 失效
    将聚合物波导挤出到表面上

    公开(公告)号：US5317657A

    公开(公告)日：1994-05-31

    申请号：US922267

    申请日：1992-07-30

    申请人： Antonio R. Gallo ,  James J. McDonough ,  Gordon J. Robbins ,  Robert R. Shaw

    发明人： Antonio R. Gallo ,  James J. McDonough ,  Gordon J. Robbins ,  Robert R. Shaw

    IPC分类号： B29C41/36 ,  B29C47/00 ,  B29C67/00 ,  B29D11/00 ,  G02B6/122 ,  G02B6/13 ,  G02B6/132 ,  G02B6/138

    CPC分类号： B29C47/0004 ,  B29C41/36 ,  B29D11/00663 ,  G02B6/1221 ,  G02B6/132 ,  G02B6/138 ,  B29C47/0009 ,  B29C67/00

    摘要： A waveguide structure is directly extruded onto a surface from a nozzle placed a predetermined distance above the surface and which is moved relative to the surface, preferably by means of a translation table. The predetermined distance is preferably maintained constant and the speed of relative motion regulated to achieve a uniform degree of molecular orientation within the extruded material, thus maintaining a sufficiently uniform refractive index along the axis of the waveguide. Partitions within the nozzle allow the formation of a layered waveguide or the simultaneous formation of concentric cladding or protective layers. The waveguides are advantageously formed as a curtain which is later patterned, by direct writing on the surface or between chips mounted on an electronic module.

    摘要翻译： 波导结构直接从位于表面上方预定距离的喷嘴的表面挤出，并且相对于表面移动，优选地通过平移台。 预定距离优选地保持恒定并且相对运动的速度被调节以在挤出的材料内实现均匀的分子取向程度，从而沿着波导的轴保持足够均匀的折射率。 喷嘴内的分区允许形成分层波导或同时形成同心包层或保护层。 波导有利地形成为帘幕，其通过直接写在表面上或安装在电子模块上的芯片之间而被图案化。

    CONDUCTIVE FILAMENT BASED MEMORY ELEMENTS AND METHODS WITH IMPROVED DATA RETENTION AND/OR ENDURANCE
    3.
    发明申请
    CONDUCTIVE FILAMENT BASED MEMORY ELEMENTS AND METHODS WITH IMPROVED DATA RETENTION AND/OR ENDURANCE 失效
    基于导电纤维的记忆元素和改善数据保持和/或持久性的方法

    公开(公告)号：US20130001503A1

    公开(公告)日：2013-01-03

    申请号：US13464895

    申请日：2012-05-04

    申请人： Antonio R. Gallo

    发明人： Antonio R. Gallo

    IPC分类号： H01L45/00 ,  H01L21/8239

    CPC分类号： H01L45/16 ,  G11C13/0007 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/142 ,  H01L45/1641

    摘要： A memory element can include a memory layer formed between two electrodes; at least one element within the memory layer that is oxidizable in the presence of an electric field applied across the electrodes; and an inhibitor material incorporated into at least a portion of the memory layer that decreases an oxidation rate of the at least one element within the memory layer with respect to the memory layer alone. Methods of forming such a memory element are also disclosed.

    摘要翻译： 存储元件可以包括形成在两个电极之间的存储层; 存储层内的至少一个元件，其在施加在电极上的电场存在下可氧化; 以及结合到存储层的至少一部分中的抑制剂材料，其相对于存储层单独降低存储层内的至少一种元素的氧化速率。 还公开了形成这种存储元件的方法。

    Semiconductor etching process which produces oriented sloped walls
    4.
    发明授权
    Semiconductor etching process which produces oriented sloped walls 失效
    半导体蚀刻工艺生产定向的倾斜墙壁

    公开(公告)号：US4778583A

    公开(公告)日：1988-10-18

    申请号：US48112

    申请日：1987-05-11

    申请人： John J. Wagner ,  Antonio R. Gallo

    发明人： John J. Wagner ,  Antonio R. Gallo

    IPC分类号： H01L21/302 ,  C23F4/00 ,  H01L21/3065 ,  C23C14/04 ,  C23C14/16

    CPC分类号： H01L21/3065

    摘要： A method is disclosed of forming a semiconductor device including performing a dry plasma etch at one major surface of a monocrystalline silicon substrate to form a sloped lateral wall lying in a selected crystallographic plane intersecting one major surface. The oriented sloped lateral wall is formed during plasma etching by introducing into contact with said major surface at unprotected locations a chlorofluorocarbon gas and employing during etching a pressure of at least 6.67 Pa and a radio frequency power density of less than 3 watts per square centimeter.

    摘要翻译： 公开了一种形成半导体器件的方法，包括在单晶硅衬底的一个主表面处执行干等离子体蚀刻，以形成位于与一个主表面相交的选定结晶平面中的倾斜侧壁。 在等离子体蚀刻期间，通过在未受保护的位置处与所述主表面接触氯氟烃气体并且在蚀刻期间使用至少6.67Pa的压力和小于3瓦每平方厘米的射频功率密度来形成定向倾斜的侧壁。

    Programmable impedance elements and devices that include such elements
    6.
    发明授权
    Programmable impedance elements and devices that include such elements 有权
    可编程阻抗元件和包含这些元件的器件

    公开(公告)号：US09401472B1

    公开(公告)日：2016-07-26

    申请号：US13242391

    申请日：2011-09-23

    申请人： Chakravarthy Gopalan ,  Antonio R. Gallo ,  Yi Ma

    发明人： Chakravarthy Gopalan ,  Antonio R. Gallo ,  Yi Ma

    IPC分类号： H01L45/00 ,  H01L29/41 ,  G11C13/00

    CPC分类号： H01L45/00 ,  G11C13/0009 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/1266 ,  H01L45/1675 ,  H01L45/1683

    摘要： Programmable impedance elements structures, devices and methods are disclosed. Methods can include: forming a first electrode layer within an electrode opening that extends through a cap layer; planarizing to expose a top of the cap layer; cleaning the exposed top surface of the cap layer to remove residual species from previous process steps. Additional methods can include forming at least a base ion conductor layer having an active metal formed therein that may ion conduct within the ion conductor layer; and forming an inhibitor material that mitigates agglomeration of the active metal within the base ion conductor layer as compared to the active metal alone. Programmable impedance elements and/or devices can have switching material and electrodes parallel to both bottoms and sides of a cell opening formed in a cell dielectric. Other embodiments can include an ion conductor layer having an alloy of an active metal, or two ion conductor layers in contact with an active electrode.

    摘要翻译： 公开了可编程阻抗元件的结构，装置和方法。 方法可以包括：在延伸穿过盖层的电极开口内形成第一电极层; 平坦化以暴露盖层的顶部; 清洁盖层的暴露的顶表面以从先前的工艺步骤中除去残留的物质。 附加方法可以包括至少形成其中形成有活性金属的基离子导体层，其可以在离子导体层内离子传导; 以及形成抑制剂材料，其与单独的活性金属相比，减轻了基础离子导体层内的活性金属的聚集。 可编程阻抗元件和/或器件可以具有平行于形成在单元电介质中的单元开口的底部和侧面的开关材料和电极。 其他实施例可以包括具有活性金属或与活性电极接触的两个离子导体层的合金的离子导体层。

    Conductive filament based memory elements and methods with improved data retention and/or endurance
    8.
    发明授权
    Conductive filament based memory elements and methods with improved data retention and/or endurance 失效
    基于导电丝的记忆元素和具有改进的数据保留和/或耐久性的方法

    公开(公告)号：US08531867B2

    公开(公告)日：2013-09-10

    申请号：US13464895

    申请日：2012-05-04

    申请人： Antonio R. Gallo

    发明人： Antonio R. Gallo

    IPC分类号： H01L29/08 ,  G11C11/00

    CPC分类号： H01L45/16 ,  G11C13/0007 ,  G11C13/0011 ,  H01L45/085 ,  H01L45/142 ,  H01L45/1641

    摘要： A memory element can include a memory layer formed between two electrodes; at least one element within the memory layer that is oxidizable in the presence of an electric field applied across the electrodes; and an inhibitor material incorporated into at least a portion of the memory layer that decreases an oxidation rate of the at least one element within the memory layer with respect to the memory layer alone. Methods of forming such a memory element are also disclosed.

    摘要翻译： 存储元件可以包括形成在两个电极之间的存储层; 存储层内的至少一个元件，其在施加在电极上的电场存在下可氧化; 以及结合到存储层的至少一部分中的抑制剂材料，其相对于存储层单独降低存储层内的至少一种元素的氧化速率。 还公开了形成这种存储元件的方法。

    Molecular memory devices and methods
    9.
    发明授权
    Molecular memory devices and methods 失效
    分子记忆装置和方法

    公开(公告)号：US07307870B2

    公开(公告)日：2007-12-11

    申请号：US11246874

    申请日：2005-10-07

    申请人： Werner G. Kuhr ,  Antonio R. Gallo

    发明人： Werner G. Kuhr ,  Antonio R. Gallo

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C11/5664 ,  G11C13/0009 ,  G11C13/0016 ,  G11C2213/79

    摘要： A molecular memory element comprising a switching device; at least a first bit line and a first word line coupled to said switching device; and an array of storage locations, each coupled to a bit line and a word line, said elements comprising a first electrode with storage molecules comprising redox active molecules, and said array comprising a second electrode.

    摘要翻译： 一种分子存储元件，包括开关器件; 至少第一位线和耦合到所述开关器件的第一字线; 以及存储位置阵列，每个存储位置分别耦合到位线和字线，所述元件包括具有包含氧化还原活性分子的存储分子的第一电极，所述阵列包括第二电极。