公开(公告)号：US20150255243A1

公开(公告)日：2015-09-10

申请号：US14641071

申请日：2015-03-06

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Ellie Y. YIEH ,  Srinivas D. NEMANI ,  Gary E. DICKERSON ,  Svetlana B. RADOVANOV ,  Adam BRAND

IPC: H01J37/147 ,  H01J37/08 ,  H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32422 ,  H01J37/32568 ,  H01J37/32899

Abstract: Embodiments of the disclosure provide apparatus and methods for modifying a surface of a substrate using a plasma modification process. In one embodiment, a process generally includes the removal and/or redistribution of a portion of an exposed surface of the substrate by use of an energetic particle beam while the substrate is disposed within a particle beam modification apparatus. Embodiments may also provide a plasma modification process that includes one or more pre-planarization processing steps and/or one or more post-planarization processing steps that are all performed within one processing system. Some embodiments may provide an apparatus and methods for planarizing a surface of a substrate by performing all of the plasma modification processes within either the same processing chamber, the same processing system or within processing chambers found in two or more processing systems.

Abstract translation: 本公开的实施例提供了使用等离子体修饰工艺来修饰衬底的表面的装置和方法。 在一个实施方案中，方法通常包括通过使用能量粒子束来去除和/或重新分配衬底的暴露表面的一部分，同时将衬底设置在粒子束修改设备内。 实施例还可以提供等离子体修饰过程，其包括一个或多个预平面化处理步骤和/或一个或多个在一个处理系统内执行的后平面化处理步骤。 一些实施例可以提供用于通过执行在两个或更多个处理系统中找到的相同处理室，相同处理系统或处理室内的所有等离子体修饰过程来平坦化衬底表面的装置和方法。

公开(公告)号：US20150118832A1

公开(公告)日：2015-04-30

申请号：US14062638

申请日：2013-10-24

Applicant: Applied Materials, Inc.

Inventor： Bingxi Sun WOOD ,  Li Yan MIAO ,  Huixiong DAI ,  Adam BRAND ,  Yongmei CHEN ,  Mandar B. PANDIT ,  Qingjun ZHOU

IPC: H01L21/266 ,  H01L21/3105

CPC classification number: H01L21/266 ,  H01L21/26586 ,  H01L21/31053 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/823431 ,  H01L21/845 ,  H01L29/66803

Abstract: Embodiments of the present invention provide a methods for patterning a hardmask layer with good process control for an ion implantation process, particularly suitable for manufacturing the fin field effect transistor (FinFET) for semiconductor chips. In one embodiment, a method of patterning a hardmask layer disposed on a substrate includes forming a planarization layer over a hardmask layer disposed on a substrate, disposing a patterned photoresist layer over the planarization layer, patterning the planarization layer and the hardmask layer uncovered by the patterned photoresist layer in a processing chamber, exposing a first portion of the underlying substrate, and removing the planarization layer from the substrate.

Abstract translation: 本发明的实施例提供了一种用于对具有用于离子注入工艺的良好工艺控制的硬掩模层图案化的方法，特别适用于制造用于半导体芯片的鳍式场效应晶体管（FinFET）。 在一个实施例中，图案化设置在衬底上的硬掩模层的方法包括在设置在衬底上的硬掩模层上形成平坦化层，在平坦化层上设置图案化的光致抗蚀剂层，将平坦化层和硬掩模层图案化， 在处理室中的图案化光致抗蚀剂层，暴露下面的衬底的第一部分，以及从衬底去除平坦化层。