公开(公告)号：US20160049305A1

公开(公告)日：2016-02-18

申请号：US14799374

申请日：2015-07-14

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Bok Hoen KIM ,  Deenesh PADHI ,  Li Yan MIAO ,  Pramit MANNA ,  Christopher Dennis BENCHER ,  Mehul B. NAIK ,  Huixiong DAI ,  Christopher S. NGAI ,  Daniel Lee DIEHL

IPC: H01L21/308 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311

CPC classification number: H01L21/3088 ,  H01L21/02115 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144

Abstract: Embodiments of the disclosure generally provide a method of forming a reduced dimension pattern in a hardmask that is optically matched to an overlying photoresist layer. The method generally comprises of application of a dimension shrinking conformal carbon layer over the field region, sidewalls, and bottom portion of the patterned photoresist and the underlying hardmask at temperatures below the decomposition temperature of the photoresist. The methods and embodiments herein further involve removal of the conformal carbon layer from the bottom portion of the patterned photoresist and the hardmask by an etch process to expose the hardmask, etching the exposed hardmask substrate at the bottom portion, followed by the simultaneous removal of the conformal carbon layer, the photoresist, and other carbonaceous components. A hardmask with reduced dimension features for further pattern transfer is thus yielded.

Abstract translation: 本公开的实施例通常提供在与上覆光致抗蚀剂层光学匹配的硬掩模中形成减小尺寸图案的方法。 该方法通常包括在低于光致抗蚀剂的分解温度的温度下，在图案化的光致抗蚀剂和下面的硬掩模的场区域，侧壁和底部上施加尺寸收缩的保形碳层。 本文的方法和实施例还涉及通过蚀刻工艺从图案化的光致抗蚀剂和硬掩模的底部部分去除保形碳层，以暴露硬掩模，在底部蚀刻暴露的硬掩模基板，随后同时去除 保形碳层，光致抗蚀剂等碳质成分。 因此产生了用于进一步模式转移的尺寸减小特征的硬掩模。

公开(公告)号：US20160365248A1

公开(公告)日：2016-12-15

申请号：US15137486

申请日：2016-04-25

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Pramit MANNA ,  Li Yan MIAO ,  Deenesh PADHI ,  Bok Hoen KIM ,  Christopher Dennis BENCHER

IPC: H01L21/033 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/027 ,  H01L21/02

CPC classification number: H01L21/0337 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0273 ,  H01L21/31058 ,  H01L21/31138 ,  H01L2221/00

Abstract: Embodiments of the disclosure relate to deposition of a conformal organic material over a feature formed in a photoresist or a hardmask, to decrease the critical dimensions and line edge roughness. In various embodiments, an ultra-conformal carbon-based material is deposited over features formed in a high-resolution photoresist. The conformal organic layer formed over the photoresist thus reduces both the critical dimensions and the line edge roughness of the features.

Abstract translation: 本公开的实施例涉及在光致抗蚀剂或硬掩模中形成的特征上沉积保形有机材料，以减少临界尺寸和线边缘粗糙度。 在各种实施例中，将超适形碳基材料沉积在形成于高分辨率光致抗蚀剂中的特征上。 在光致抗蚀剂上形成的共形有机层因此降低了特征的临界尺寸和线边缘粗糙度。

公开(公告)号：US20170278709A1

公开(公告)日：2017-09-28

申请号：US15602862

申请日：2017-05-23

Applicant: Applied Materials, Inc.

Inventor： Bencherki MEBARKI ,  Pramit MANNA ,  Li Yan MIAO ,  Deenesh PADHI ,  Bok Hoen KIM ,  Christopher Dennis BENCHER

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/027 ,  H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/0337 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0273 ,  H01L21/31058 ,  H01L21/31138 ,  H01L2221/00

Abstract: Embodiments of the disclosure relate to deposition of a conformal organic material over a feature formed in a photoresist or a hardmask, to decrease the critical dimensions and line edge roughness. In various embodiments, an ultra-conformal carbon-based material is deposited over features formed in a high-resolution photoresist. The conformal organic layer formed over the photoresist thus reduces both the critical dimensions and the line edge roughness of the features.

公开(公告)号：US20150118832A1

公开(公告)日：2015-04-30

申请号：US14062638

申请日：2013-10-24

Applicant: Applied Materials, Inc.

Inventor： Bingxi Sun WOOD ,  Li Yan MIAO ,  Huixiong DAI ,  Adam BRAND ,  Yongmei CHEN ,  Mandar B. PANDIT ,  Qingjun ZHOU

IPC: H01L21/266 ,  H01L21/3105

CPC classification number: H01L21/266 ,  H01L21/26586 ,  H01L21/31053 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/823431 ,  H01L21/845 ,  H01L29/66803

Abstract: Embodiments of the present invention provide a methods for patterning a hardmask layer with good process control for an ion implantation process, particularly suitable for manufacturing the fin field effect transistor (FinFET) for semiconductor chips. In one embodiment, a method of patterning a hardmask layer disposed on a substrate includes forming a planarization layer over a hardmask layer disposed on a substrate, disposing a patterned photoresist layer over the planarization layer, patterning the planarization layer and the hardmask layer uncovered by the patterned photoresist layer in a processing chamber, exposing a first portion of the underlying substrate, and removing the planarization layer from the substrate.

Abstract translation: 本发明的实施例提供了一种用于对具有用于离子注入工艺的良好工艺控制的硬掩模层图案化的方法，特别适用于制造用于半导体芯片的鳍式场效应晶体管（FinFET）。 在一个实施例中，图案化设置在衬底上的硬掩模层的方法包括在设置在衬底上的硬掩模层上形成平坦化层，在平坦化层上设置图案化的光致抗蚀剂层，将平坦化层和硬掩模层图案化， 在处理室中的图案化光致抗蚀剂层，暴露下面的衬底的第一部分，以及从衬底去除平坦化层。