公开(公告)号：US11527407B2

公开(公告)日：2022-12-13

申请号：US16807796

申请日：2020-03-03

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Bhaskar Jyoti Bhuyan ,  Andrea Leoncini

IPC: H01L21/033 ,  C23C16/44 ,  C23C16/04 ,  C23C16/46

Abstract: Methods of forming graphene hard mask films are disclosed. Some methods are advantageously performed at lower temperatures. The substrate is exposed to an aromatic precursor to form the graphene hard mask film. The substrate comprises one or more of titanium nitride (TiN), tantalum nitride (TaN), silicon (Si), cobalt (Co), titanium (Ti), silicon dioxide (SiO2), copper (Cu), and low-k dielectric materials.

公开(公告)号：US20220306662A1

公开(公告)日：2022-09-29

申请号：US17841963

申请日：2022-06-16

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Andrea Leoncini ,  Paul Mehlmann ,  Nemanja Dordevic ,  Han Vinh Huynh ,  Doreen Wei Ying Yong

IPC: C07F11/00 ,  C23C16/455 ,  C23C16/18

Abstract: Molybdenum(IV) and molybdenum(III) coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20220220137A1

公开(公告)日：2022-07-14

申请号：US17146680

申请日：2021-01-12

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Andrea Leoncini ,  Paul Mehlmann ,  Nemanja Dordevic ,  Han Vinh Huynh ,  Doreen Wei Ying Yong ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Feng Q. Liu

IPC: C07F11/00 ,  C23C16/455 ,  C23C16/18 ,  H01L31/042 ,  H01L31/18

Abstract: Molybdenum(VI) coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US20240332072A1

公开(公告)日：2024-10-03

申请号：US18613998

申请日：2024-03-22

Applicant: Applied Materials, Inc.

Inventor： Andrea Leoncini

IPC: H01L21/768 ,  C23C16/455 ,  H01L21/285

CPC classification number: H01L21/76834 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/28568

Abstract: Described are methods of forming a protective capping layer on a metal layer of a semiconductor substrate. A metal layer is deposited using a metal precursor and a reactant pulsed to form the metal layer having a reactive surface. The number of cycles can be in a range of from 1 to 10 cycles or from 2 to 5 cycles or from 2 to 100 cycles. The metal layer is then exposed to a long chain precursor (e.g., primary amines, alcohols, thiols, phosphines, selenols) and a metal precursor to form a protective capping layer on the metal layer. The number of cycles can be in a range of from 1 to 10 cycles or from 2 to 5 cycles, depending upon the desired thickness of the protective capping layer.

公开(公告)号：US20240327983A1

公开(公告)日：2024-10-03

申请号：US18609267

申请日：2024-03-19

Applicant: Applied Materials, Inc.

Inventor： Andrea Leoncini

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45553 ,  C23C16/458

Abstract: Processing chambers for forming metal-containing precursors and deposition of pure metal films are disclosed. Also disclosed are deposition methods that include forming a metal-containing precursor and depositing the metal-containing precursor on a substrate to form a metal film in a single processing chamber.

公开(公告)号：US20230151038A1

公开(公告)日：2023-05-18

申请号：US18097406

申请日：2023-01-16

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Andrea Leoncini ,  Paul Mehlmann ,  Nemanja Dordevic ,  Han Vinh Huynh ,  Doreen Wei Ying Yong

IPC: C07F11/00 ,  C23C16/32 ,  C23C16/40 ,  C23C16/42 ,  C23C16/18 ,  C23C16/34

CPC classification number: C07F11/00 ,  C23C16/32 ,  C23C16/405 ,  C23C16/42 ,  C23C16/18 ,  C23C16/34

Abstract: Molybdenum(0) coordination complexes comprising an arene ligand and one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US11584768B2

公开(公告)日：2023-02-21

申请号：US17146886

申请日：2021-01-12

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Andrea Leoncini ,  Paul Mehlmann ,  Nemanja Dordevic ,  Han Vinh Huynh ,  Doreen Wei Ying Yong

IPC: C07F11/00 ,  C23C16/32 ,  C23C16/40 ,  C23C16/42 ,  C23C16/18 ,  C23C16/34

Abstract: Molybdenum(0) coordination complexes comprising an arene ligand and one or more neutral ligands which coordinate to the metal center by carbon, nitrogen or phosphorous are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum nitride). The exposures can be sequential or simultaneous.

公开(公告)号：US11515154B2

公开(公告)日：2022-11-29

申请号：US17081506

申请日：2020-10-27

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Andrea Leoncini ,  Yong Wang ,  Doreen Wei Ying Yong

IPC: C23C16/04 ,  H01L21/02 ,  H01L21/67

Abstract: Selective deposition methods are described. An exemplary method comprises exposing the substrate comprising a first surface and a second surface to an anchor reactant and selectively depositing the anchor reactant on the first surface as a seed layer, wherein the anchor reactant comprises an ethynyl derivative with a headgroup that selectively targets the first surface.

公开(公告)号：US20250157855A1

公开(公告)日：2025-05-15

申请号：US18940315

申请日：2024-11-07

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Jesus Candelario Mendoza-Gutierrez ,  Mark Saly ,  Chandan Kr Bank ,  Andrea Leoncini ,  Wei Chun Lim ,  Sze Chieh Tan ,  Lisa J. Enman

IPC: H01L21/768 ,  C23C16/02 ,  H01L21/02

Abstract: Methods for selectively depositing a material on a dielectric surface relative to a metallic surface are disclosed. The metallic surface is protected with a self-assembled monolayer comprising an N-heterocyclic carbene prior to deposition of a liner or barrier layer on adjacent dielectric surfaces.

公开(公告)号：US20250003076A1

公开(公告)日：2025-01-02

申请号：US18214918

申请日：2023-06-27

Applicant: Applied Materials, Inc.

Inventor： Andrea Leoncini ,  Yi Kun Kelvin Goh

IPC: C23C16/458 ,  C23C16/44 ,  C23C16/46

Abstract: Embodiments of the disclosure relate to heating jackets comprising a reformable insulator. The insulator may be shaped to conform to the shape of a vapor deposition precursor delivery system, or a portion thereof, and subsequently reformed to a different vapor deposition precursor delivery system, or a portion thereof. Some embodiments of the disclosure combine multiple heating modules to form a heating jacket. The heating modules contain a flexible heating element and an insulating, protective cover.