公开(公告)号：US20140073144A1

公开(公告)日：2014-03-13

申请号：US13668657

申请日：2012-11-05

Applicant: Applied Materials, Inc.

Inventor： Amit Chatterjee ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Brian Underwood ,  Kiran V. Thadani ,  Xiaolin Chen ,  Abhishek Dube ,  Jingmei Liang

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219

Abstract: A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.

Abstract translation: 描述形成电介质层的方法。 该方法通过使用局部等离子体的化学气相沉积法沉积含硅膜。 含硅膜在低基板温度下沉积时是可流动的。 将硅前体（例如甲硅烷基胺，高级硅烷或卤代硅烷）输送到衬底处理区域并在局部等离子体中激发。 第二等离子体蒸气或气体与硅衬底加工区域中的硅前体结合，并且可包括氨，氮（N 2），氩，氢（H 2）和/或氧（O 2）。 已经发现本文公开的与这些蒸汽/气体组合组合的设备结构在基板温度低于或约200℃时导致可流动的沉积，当使用较低功率激发局部等离子体时。

公开(公告)号：US08889566B2

公开(公告)日：2014-11-18

申请号：US13668657

申请日：2012-11-05

Applicant: Applied Materials, Inc.

Inventor： Amit Chatterjee ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Brian Underwood ,  Kiran V. Thadani ,  Xiaolin Chen ,  Abhishek Dube ,  Jingmei Liang

IPC: C23C16/32 ,  C23C16/34 ,  C23C16/50 ,  H01L21/02 ,  H01L21/31 ,  H01L21/318

CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219

Abstract: A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N2), argon, hydrogen (H2) and/or oxygen (O2). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.

Abstract translation: 描述形成电介质层的方法。 该方法通过使用局部等离子体的化学气相沉积法沉积含硅膜。 含硅膜在低基板温度下沉积时是可流动的。 将硅前体（例如甲硅烷基胺，高级硅烷或卤代硅烷）输送到衬底处理区域并在局部等离子体中激发。 第二等离子体蒸气或气体与硅衬底加工区域中的硅前体结合，并且可包括氨，氮（N 2），氩，氢（H 2）和/或氧（O 2）。 已经发现本文公开的与这些蒸汽/气体组合组合的设备结构在基板温度低于或约200℃时导致可流动的沉积，当使用较低功率激发局部等离子体时。

公开(公告)号：US08753985B2

公开(公告)日：2014-06-17

申请号：US13628355

申请日：2012-09-27

Applicant: Applied Materials, Inc.

Inventor： Brian Underwood ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/02104 ,  C23C16/325 ,  C23C16/45536 ,  H01L21/02529 ,  H01L21/0262

Abstract: Molecular layer deposition of silicon carbide is described. A deposition precursor includes a precursor molecule which contains silicon, carbon and hydrogen. Exposure of a surface to the precursor molecule results in self-limited growth of a single layer. Though the growth is self-limited, the thickness deposited during each cycle of molecular layer deposition involves multiple “atomic” layers and so each cycle may deposit thicknesses greater than typically found during atomic layer depositions. Precursor effluents are removed from the substrate processing region and then the surface is irradiated before exposing the layer to the deposition precursor again.

Abstract translation: 描述碳化硅的分子层沉积。 沉积前体包括含有硅，碳和氢的前体分子。 将表面暴露于前体分子导致单层自限制生长。 虽然生长是自限制的，但是在分子层沉积的每个循环期间沉积的厚度涉及多个“原子”层，因此每个循环可以沉积比在原子层沉积期间通常发现的厚度。 从底物处理区域除去前体流出物，然后在再次将层暴露于沉积前体之前照射表面。

公开(公告)号：US20130267079A1

公开(公告)日：2013-10-10

申请号：US13628355

申请日：2012-09-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Brian Underwood ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  C23C16/325 ,  C23C16/45536 ,  H01L21/02529 ,  H01L21/0262

Abstract: Molecular layer deposition of silicon carbide is described. A deposition precursor includes a precursor molecule which contains silicon, carbon and hydrogen. Exposure of a surface to the precursor molecule results in self-limited growth of a single layer. Though the growth is self-limited, the thickness deposited during each cycle of molecular layer deposition involves multiple “atomic” layers and so each cycle may deposit thicknesses greater than typically found during atomic layer depositions. Precursor effluents are removed from the substrate processing region and then the surface is irradiated before exposing the layer to the deposition precursor again.

Abstract translation: 描述碳化硅的分子层沉积。 沉积前体包括含有硅，碳和氢的前体分子。 将表面暴露于前体分子导致单层自限制生长。 虽然生长是自限制的，但是在分子层沉积的每个循环期间沉积的厚度涉及多个“原子”层，因此每个循环可以沉积比在原子层沉积期间通常发现的厚度。 从底物处理区域除去前体流出物，然后在再次将层暴露于沉积前体之前照射表面。