公开(公告)号：US20230343644A1

公开(公告)日：2023-10-26

申请号：US18070383

申请日：2022-11-28

申请人： Applied Materials, Inc.

发明人： Chih-Hsun HSU ,  Shiyu YUE ,  Jiang LU ,  Rongjun WANG ,  Xianmin TANG ,  Zhenjiang CUI ,  Chi Hong CHING ,  Meng-Shan WU ,  Chun-chieh WANG ,  Wei LEI ,  Yu LEI

IPC分类号： H01L21/768 ,  H01L21/67 ,  H01L23/532

CPC分类号： H01L21/76877 ,  H01L21/67063 ,  H01L21/6719 ,  H01L21/76843 ,  H01L21/76871 ,  H01L23/53266

摘要： A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed in a first process chamber to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process is performed in the first process chamber removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

公开(公告)号：US20230343643A1

公开(公告)日：2023-10-26

申请号：US17868475

申请日：2022-07-19

申请人： Applied Materials, Inc.

发明人： Chih-Hsun HSU ,  Shiyu YUE ,  Wei LEI ,  Yi XU ,  Jiang LU ,  Yu LEI ,  Ziye XIONG ,  Tsung-Han YANG ,  Zhimin QI ,  Aixi ZHANG ,  Jie ZHANG ,  Liqi WU ,  Rongjun WANG ,  Shihchung CHEN ,  Meng-Shan WU ,  Chun-Chieh WANG ,  Annamalai LAKSHMANAN ,  Yixiong YANG ,  Xianmin TANG

IPC分类号： H01L21/768 ,  H01L23/522

CPC分类号： H01L21/76877 ,  H01L21/76876 ,  H01L21/76843 ,  H01L21/76865 ,  H01L23/5226 ,  H01L21/76826

摘要： A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

公开(公告)号：US20240014072A1

公开(公告)日：2024-01-11

申请号：US18212352

申请日：2023-06-21

申请人： Applied Materials, Inc.

发明人： Tsung-Han YANG ,  Zhimin QI ,  Yongqian GAO ,  Rongjun WANG ,  Yi XU ,  Yu LEI ,  Xingyao GAO ,  Chih-Hsun HSU ,  Xi CEN ,  Wei LEI ,  Shiyu YUE ,  Aixi ZHANG ,  Kai WU ,  Xianmin TANG

IPC分类号： H01L21/768 ,  H01J37/32

CPC分类号： H01L21/76879 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32422 ,  H01J2237/2001 ,  H01J37/321 ,  H01J2237/332

摘要： A method of forming a semiconductor device structure includes forming a nucleation layer within at least one feature. The method includes exposing the nucleation layer to a nitrogen plasma treatment. The nitrogen plasma treatment preferentially treats the top field and sidewalls while leaving the bottom surface substantially untreated to encourage bottom up metal growth.

公开(公告)号：US20230420295A1

公开(公告)日：2023-12-28

申请号：US18133102

申请日：2023-04-11

申请人： Applied Materials, Inc.

发明人： Tsung-Han YANG ,  Xingyao GAO ,  Shiyu YUE ,  Chih-Hsun HSU ,  Shirish PETHE ,  Rongjun WANG ,  Yi XU ,  Wei LEI ,  Yu LEI ,  Aixi ZHANG ,  Xianyuan ZHAO ,  Zhimin QI ,  Jiang LU ,  Xianmin TANG

IPC分类号： H01L21/768 ,  H01L21/285 ,  H01J37/32

CPC分类号： H01L21/76877 ,  H01L21/76876 ,  H01L21/76865 ,  H01L21/2855 ,  H01J2237/338 ,  H01L21/76856 ,  H01L21/76861 ,  H01J37/32899 ,  H01L21/76843

摘要： A method and apparatus for tungsten gap-fill in semiconductor devices are provided. The method includes performing a gradient oxidation process to oxidize exposed portions of a liner layer, wherein the gradient oxidation process preferentially oxidizes an overhang portion of the liner layer, which obstructs or blocks top openings of one or more features formed within a field region of a substrate. The method further includes performing an etchback process to remove or reduce the oxidized overhang portion of the liner layer, exposing the liner layer to a chemical vapor transport (CVT) process to remove metal oxide remaining from the gradient oxidation process and the etchback process, and performing a tungsten gap-fill process to fill or partially fill the one or more features.

公开(公告)号：US20230343645A1

公开(公告)日：2023-10-26

申请号：US18128389

申请日：2023-03-30

申请人： Applied Materials, Inc.

发明人： Meng-Shan WU ,  Chih-Hsun HSU ,  Jiang LU ,  Shiyu YUE ,  Chun-chieh WANG ,  Annamalai LAKSHMANAN ,  Yixiong YANG

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76879 ,  H01L21/76871 ,  H01L21/76843 ,  H01L23/53266 ,  H01L21/76865 ,  H01L21/76831

摘要： A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on exposed top surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in the top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process removes the oxidized portion of the seed layer. A second etch process removes portions of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.