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    DIFFRACTIVE OPTICAL ELEMENTS AND METHODS FOR PATTERNING THIN FILM ELECTROCHEMICAL DEVICES
    1.
    发明申请
    DIFFRACTIVE OPTICAL ELEMENTS AND METHODS FOR PATTERNING THIN FILM ELECTROCHEMICAL DEVICES 审中-公开
    衍射光学元件和薄膜电化学装置的方法

    公开(公告)号：US20150293371A1

    公开(公告)日：2015-10-15

    申请号：US14438706

    申请日：2013-10-25

    申请人： APPLIED MATERIALS, INC.

    发明人： Daoying Song ,  Leo B. Kwak ,  Bruce E. Adams ,  Theodore P. Moffitt

    IPC分类号： G02B27/42 ,  B23K26/36 ,  G02F1/153

    CPC分类号： G02B27/4233 ,  B23K26/361 ,  G02F1/153 ,  H01M4/0402 ,  H01M2010/0495 ,  H01M2220/30

    摘要： A method of fabricating an electrochemical device, comprising: depositing device layers, including electrodes and corresponding current collectors, and an electrolyte layer, on a substrate; and directly patterning at least one of said device layers by a laser light pattern generated by a laser beam incident on a diffractive optical element, the laser light pattern directly patterning at least an entire device in a single laser shot. The laser direct patterning may include, among others: die patterning of thin film electrochemical devices after all active layers have been deposited; selective ablation of cathode/anode material from corresponding current collectors; and selective ablation of electrolyte material from current collectors, Furthermore, directly patterning of the electrochemical device may be by a shaped beam generated by a laser beam incident on a diffractive optical element, and the shaped beam may be moved across the working surface of the device.

    摘要翻译： 一种制造电化学装置的方法，包括：在衬底上沉积包括电极和相应的集电器的电极层和电解质层; 并且通过由入射在衍射光学元件上的激光束产生的激光图案直接图案化所述器件层中的至少一个，所述激光图案直接在单个激光照射中构图至少整个器件。 激光直接图案化可以包括：在所有活性层已经沉积之后，薄膜电化学装置的模具图案化; 从相应的集电器选择性地消融阴极/阳极材料; 以及从集电体中选择性地消融电解质材料。此外，电化学装置的直接图案化可以是通过入射在衍射光学元件上的激光束产生的成形光束，并且成形光束可以移动穿过该装置的工作表面 。

    Mask-less fabrication of vertical thin film batteries
    3.
    发明授权
    Mask-less fabrication of vertical thin film batteries 有权

    公开(公告)号：US09768450B2

    公开(公告)日：2017-09-19

    申请号：US14653730

    申请日：2013-12-17

    申请人： APPLIED MATERIALS, INC.

    发明人： Daoying Song ,  Chong Jiang ,  Byung-Sung Leo Kwak

    IPC分类号： B44C1/22 ,  H01M6/40 ,  C23C14/08 ,  C23C14/34 ,  H01M4/04 ,  H01M10/0585 ,  H01M10/04

    CPC分类号： H01M6/40 ,  C23C14/088 ,  C23C14/34 ,  H01M4/0426 ,  H01M10/0436 ,  H01M10/0585

    摘要： A method of fabricating a thin film battery may comprise: depositing a first stack of blanket layers on a substrate, the first stack comprising a cathode current collector, a cathode, an electrolyte, an anode and an anode current collector; laser die patterning the first stack to form one or more second stacks, each second stack forming the core of a separate thin film battery; blanket depositing an encapsulation layer over the one or more second stacks; laser patterning the encapsulation layer to open up contact areas to the anode current collectors on each of the one or more second stacks; blanket depositing a metal pad layer over the encapsulation layer and the contact areas; and laser patterning the metal pad layer to electrically isolate the anode current collectors of each of the one or more thin film batteries. For electrically non-conductive substrates, cathode contact areas are opened-up through the substrate.

    CONFIGURATIONS OF SOLID STATE THIN FILM BATTERIES
    5.
    发明申请
    CONFIGURATIONS OF SOLID STATE THIN FILM BATTERIES 审中-公开

    公开(公告)号：US20170149093A1

    公开(公告)日：2017-05-25

    申请号：US15389050

    申请日：2016-12-22

    申请人： Applied Materials, Inc.

    发明人： Lizhong Sun ,  Byung-Sung Leo Kwak ,  Miaojun Wang ,  Dimitrios Argyris ,  Daoying Song

    IPC分类号： H01M10/0585 ,  H01M10/0562 ,  H01M10/42 ,  H01M10/04

    CPC分类号： H01M10/0585 ,  H01M10/0404 ,  H01M10/0436 ,  H01M10/0562

    摘要： A solid state thin film battery may comprise: an adhesion promotion and intermixing barrier layer on a substrate, the layer comprising an electrically insulating material having a thickness in the range of 50 nm to 5,000 nm; a metal adhesion layer on the adhesion promotion and intermixing barrier layer; a current collector layer on the metal adhesion layer; a cathode layer on the current collector layer; an electrolyte layer on the cathode layer; and an anode layer on the electrolyte layer; wherein the device layers form a stack on the thin substrate; and wherein the adhesion promotion layer prevents cracking of the stack and delamination from the thin substrate of the stack during fabrication of the stack, including annealing of the cathode at a temperature in the range of 500° C. to 800° C., and/or intermixing of the current collector and cathode layers during annealing of the cathode layer.