公开(公告)号：US20240162008A1

公开(公告)日：2024-05-16

申请号：US17988083

申请日：2022-11-16

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Yang YANG ,  Nicolas John BRIGHT ,  A N M Wasekul AZAD

IPC: H01J37/32 ,  H03H11/28

CPC classification number: H01J37/32183 ,  H03H11/28 ,  H01J2237/327

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network comprises a first sensor operably connected to an input of the matching network and an RF generator operable at a first frequency and a second sensor operably connected to an output of the matching network and the plasma processing chamber. The first sensor and the second sensor are configured to measure impedance during an RF generator pulse on time. A variable capacitor is connected to the first sensor and the second sensor, and a controller is configured to tune the at least one variable capacitor of the matching network during the RF generator pulse on time based on impedance values measured during at least one of pulse on states or pulse off states of a pulse voltage waveform generator connected to the matching network or an RF signal of another RF generator operable at a second frequency different from the first frequency.

公开(公告)号：US20240152114A1

公开(公告)日：2024-05-09

申请号：US17980378

申请日：2022-11-03

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Jie YU ,  Yang YANG ,  Farhad MOGHADAM

IPC: G05B19/414 ,  G05B19/18

CPC classification number: G05B19/4145 ,  G05B19/182 ,  G05B2219/45031

Abstract: Embodiments provided herein generally include apparatus and methods, controlled by flexible tuning algorithms, for generating a plasma in a plasma processing chamber. Flexible communications between equipment of the plasma processing system allows sharing of process information and equipment settings for evaluation and refinement of the tuning algorithms used. This enhances the productivity of batch processing of a plurality of semiconductor wafers during the manufacturing process since the tuning algorithms can be modified on the fly during processing thereof. The tuning algorithms may be recorded, reused and/or modified for controlling future plasma processing.

公开(公告)号：US20240120178A1

公开(公告)日：2024-04-11

申请号：US17963146

申请日：2022-10-10

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Farhad MOGHADAM ,  Yang YANG

IPC: H01J37/32 ,  H03H7/40

CPC classification number: H01J37/32183 ,  H03H7/40 ,  H01J37/32091 ,  H01J37/321

Abstract: Embodiments provided herein generally include apparatus and methods in a plasma processing system for rapid and inexpensive repair and replacement of RF sensors necessary for the operation of radio frequency (RF) power generation and impedance matching equipment used for generating a plasma in a plasma chamber during semiconductor processing therein. Flexible communications between equipment of the plasma processing system allows sharing of process information and equipment settings for batch processing of a plurality of semiconductor wafers during the manufacturing process. Operational settings of a master plasma processing system may be used to control the operation of a plurality of slave processing systems. In addition, the operational settings of the master plasma processing system may be recorded and reused for controlling the plurality of slave processing systems.

公开(公告)号：US20240087859A1

公开(公告)日：2024-03-14

申请号：US17940513

申请日：2022-09-08

Applicant: Applied Materials, Inc.

Inventor： Kartik RAMASWAMY ,  Andrew NGUYEN ,  Yang YANG ,  Sathya GANTA ,  Fernando SILVEIRA ,  Yue GUO ,  Lu LIU

IPC: H01J37/32

CPC classification number: H01J37/32862 ,  H01J37/32082 ,  H01J2237/334

Abstract: Methods and apparatus for forming plasma in a process chamber use an annular exciter formed of a first conductive material with a first end electrically connected to an RF power source that provides RF current and a second end connected to a ground and an annular applicator, physically separated from the annular exciter, formed of a second conductive material with at least one angular split with an angle forming an upper overlap portion and a lower overlap portion separated by a high K dielectric material which is configured to provide capacitance in conjunction with an inductance of the annular applicator to form a resonant circuit that is configured to resonate when the annular exciter flows RF current that inductively excites the annular applicator to a resonant frequency which forms azimuthal plasma from the annular applicator.

公开(公告)号：US20230220551A1

公开(公告)日：2023-07-13

申请号：US18119406

申请日：2023-03-09

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOSHIZAWA ,  Abhijit B. MALLICK

IPC: C23C16/503 ,  C23C16/458 ,  H01L21/02 ,  C23C16/52 ,  C23C16/505 ,  C23C16/455

CPC classification number: C23C16/503 ,  C23C16/4586 ,  H01L21/02274 ,  C23C16/52 ,  C23C16/505 ,  C23C16/45502 ,  H01L21/02521 ,  H01L21/02115

Abstract: Embodiments of the present disclosure relate to methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a plasma-enhanced chemical vapor deposition (PECVD) process. In particular, the methods described herein utilize a combination of RF AC power and pulsed DC power to create a plasma which deposits an amorphous carbon layer with a high ratio of sp3 (diamond-like) carbon to sp2 (graphite-like) carbon. The methods also provide for lower processing pressures, lower processing temperatures, and higher processing powers, each of which, alone or in combination, may further increase the relative fraction of sp3 carbon in the deposited amorphous carbon layer. As a result of the higher sp3 carbon fraction, the methods described herein provide amorphous carbon layers having improved density, rigidity, etch selectivity, and film stress as compared to amorphous carbon layers deposited by conventional methods.

公开(公告)号：US20230145567A1

公开(公告)日：2023-05-11

申请号：US17521185

申请日：2021-11-08

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Yang YANG

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32449 ,  H01J37/32146 ,  H01J37/32935

Abstract: Methods and apparatus for plasma processing substrate are provided herein. The method comprises supplying from an RF power source RF power, measuring at the RF power source a reflected power at the first power level, comparing the measured reflected power to a first threshold, transmitting a result of the comparison to a controller, setting at least one variable capacitor to a first position based on the comparison of the measured reflected power at the first power level to the first threshold, supplying from the RF power source the RF power at a second power level for plasma processing the substrate, measuring at the RF power source the reflected power at the second power level, comparing the measured reflected power at the second power level to a second threshold different from the first threshold, transmitting a result of the comparison, setting at the matching network the at least one variable capacitor to a second position.

公开(公告)号：US20230087307A1

公开(公告)日：2023-03-23

申请号：US17475223

申请日：2021-09-14

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Yang YANG ,  Kartik RAMASWAMY

IPC: H01J37/32

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for distortion current mitigation. An example plasma processing system includes a voltage source coupled to an input node, which is coupled to an electrode disposed within a processing chamber, wherein the voltage source is configured to generate a pulsed voltage signal at the input node; a signal generator having an output, wherein the RF signal generator is configured to deliver a first RF signal at a first RF frequency to the input node; a bandpass filter coupled between the output of the signal generator and the input node, wherein the bandpass filter is configured to attenuate second RF signals that are outside a range of frequencies including the first RF frequency of the first RF signal; and an impedance matching circuit coupled between the bandpass filter and the input node.

公开(公告)号：US20230071168A1

公开(公告)日：2023-03-09

申请号：US17891044

申请日：2022-08-18

Applicant: Applied Materials, Inc.

Inventor： Kartik RAMASWAMY ,  Yang YANG ,  Yue GUO

IPC: H01J37/32

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. Embodiments of the disclosure include an apparatus and method for generating a pseudo-staircase waveform that includes coupling, during a first phase of generating a waveform, a first voltage supply to an output node; coupling, during a second phase of generating the waveform, a first capacitor between the output node and an electrical ground node; and coupling during a third phase of generating the waveform, the first capacitor and a second capacitor in a series path between the output node and the electrical ground node.

公开(公告)号：US20230067046A1

公开(公告)日：2023-03-02

申请号：US18047006

申请日：2022-10-17

Applicant: Applied Materials, Inc.

Inventor： Kartik RAMASWAMY ,  Yang YANG ,  Yue GUO

IPC: H01J37/32 ,  H03K3/57

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source circuitry, a first switch coupled between the voltage source circuitry and a first output node of the waveform generator, the first output node being configured to be coupled to a chamber, and a second switch coupled between the first output node and electrical ground node. The waveform generator also includes a third switch coupled between the voltage source circuitry and a second output node of the waveform generator, the second output node being configured to be coupled to the chamber, and a fourth switch coupled between the second output node and the electrical ground node.

公开(公告)号：US20220392750A1

公开(公告)日：2022-12-08

申请号：US17337146

申请日：2021-06-02

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Yue GUO ,  Kartik RAMASWAMY

IPC: H01J37/32 ,  H03H7/01

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source selectively coupled to an output node, where the output node is configured to be coupled to an electrode disposed within a processing chamber, and where the output node is selectively coupled to a ground node. The waveform generator may also include a radio frequency (RF) signal generator, and a first filter coupled between the RF signal generator and the output node.