公开(公告)号：US09659771B2

公开(公告)日：2017-05-23

申请号：US15137486

申请日：2016-04-25

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Pramit Manna ,  Li Yan Miao ,  Deenesh Padhi ,  Bok Hoen Kim ,  Christopher Dennis Bencher

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0273 ,  H01L21/31058 ,  H01L21/31138 ,  H01L2221/00

Abstract: Embodiments of the disclosure relate to deposition of a conformal organic material over a feature formed in a photoresist or a hardmask, to decrease the critical dimensions and line edge roughness. In various embodiments, an ultra-conformal carbon-based material is deposited over features formed in a high-resolution photoresist. The conformal organic layer formed over the photoresist thus reduces both the critical dimensions and the line edge roughness of the features.

公开(公告)号：US10014174B2

公开(公告)日：2018-07-03

申请号：US15602862

申请日：2017-05-23

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Pramit Manna ,  Li Yan Miao ,  Deenesh Padhi ,  Bok Hoen Kim ,  Christopher Dennis Bencher

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/027

CPC classification number: H01L21/0337 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0273 ,  H01L21/31058 ,  H01L21/31138 ,  H01L2221/00

Abstract: Embodiments of the disclosure relate to deposition of a conformal organic material over a feature formed in a photoresist or a hardmask, to decrease the critical dimensions and line edge roughness. In various embodiments, an ultra-conformal carbon-based material is deposited over features formed in a high-resolution photoresist. The conformal organic layer formed over the photoresist thus reduces both the critical dimensions and the line edge roughness of the features.

公开(公告)号：US09337051B2

公开(公告)日：2016-05-10

申请号：US14799374

申请日：2015-07-14

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Bok Hoen Kim ,  Deenesh Padhi ,  Li Yan Miao ,  Pramit Manna ,  Christopher Dennis Bencher ,  Mehul B. Naik ,  Huixiong Dai ,  Christopher S. Ngai ,  Daniel Lee Diehl

IPC: H01L21/00 ,  H01L21/308 ,  H01L21/311 ,  H01L21/02 ,  H01L21/027

CPC classification number: H01L21/3088 ,  H01L21/02115 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144

Abstract: Embodiments of the disclosure generally provide a method of forming a reduced dimension pattern in a hardmask that is optically matched to an overlying photoresist layer. The method generally comprises of application of a dimension shrinking conformal carbon layer over the field region, sidewalls, and bottom portion of the patterned photoresist and the underlying hardmask at temperatures below the decomposition temperature of the photoresist. The methods and embodiments herein further involve removal of the conformal carbon layer from the bottom portion of the patterned photoresist and the hardmask by an etch process to expose the hardmask, etching the exposed hardmask substrate at the bottom portion, followed by the simultaneous removal of the conformal carbon layer, the photoresist, and other carbonaceous components. A hardmask with reduced dimension features for further pattern transfer is thus yielded.

Abstract translation: 本公开的实施例通常提供在与上覆光致抗蚀剂层光学匹配的硬掩模中形成减小尺寸图案的方法。 该方法通常包括在低于光致抗蚀剂的分解温度的温度下，在图案化的光致抗蚀剂和下面的硬掩模的场区域，侧壁和底部上施加尺寸收缩的保形碳层。 本文的方法和实施例还涉及通过蚀刻工艺从图案化的光致抗蚀剂和硬掩模的底部部分去除保形碳层，以暴露硬掩模，在底部蚀刻暴露的硬掩模基板，随后同时去除 保形碳层，光致抗蚀剂等碳质成分。 因此产生了用于进一步模式转移的尺寸减小特征的硬掩模。