公开(公告)号：US20020101167A1

公开(公告)日：2002-08-01

申请号：US09967812

申请日：2001-09-28

申请人： Applied Materials, Inc.

发明人： Hongqing Shan ,  Mahmoud Dahimene ,  Kenny L. Doan

IPC分类号： H05B031/26

CPC分类号： H01J37/32082

摘要： A plasma reactor for processing a semiconductor workpiece, includes a vacuum chamber including a side wall and an overhead ceiling, a wafer support pedestal within the vacuum chamber, gas injection passages to the interior of the vacuum chamber coupled to a process gas supply, and a first RF power source for applying RF power to the wafer support pedestal for generating a capacitively coupled plasma. It further includes plural electromagnets near said chamber, and a time-varying current source connected to said plural electromagnets for producing a magnet field that rotates relative to said wafer pedestal. An inductive plasma source power applicator is provided near said chamber and a second RF power source is provided for applying RF power to said inductive plasma source power applicator for generating an inductively coupled plasma within said chamber.

摘要翻译： 一种用于处理半导体工件的等离子体反应器，包括：真空室，包括侧壁和顶部顶棚;真空室内的晶片支撑基座;连接至工艺气体供应的真空室内部的气体注入通道;以及 第一RF电源，用于将RF功率施加到晶片支撑基座，用于产生电容耦合等离子体。 它还包括在所述室附近的多个电磁体，以及连接到所述多个电磁体的时变电流源，用于产生相对于所述晶片基座转动的磁场。 在所述腔室附近提供感应等离子体源功率施加器，并且提供第二RF电源以将RF功率施加到所述感应等离子体源功率施加器，以在所述室内产生电感耦合等离子体。

公开(公告)号：US20040149394A1

公开(公告)日：2004-08-05

申请号：US10357652

申请日：2003-02-03

申请人： Applied Materials, Inc.

发明人： Kenny L. Doan ,  Yunsang Kim ,  Mahmoud Dahimene ,  Jingbao Liu ,  Bryan Y. Pu ,  Hongqing Shan

IPC分类号： H01L021/3065 ,  C03C015/00

CPC分类号： H01J37/32009 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/3266

摘要： Apparatus for plasma etching a layer of material upon a substrate comprising an anode having a first region protruding from a second region, wherein the second region defines a plane and the first region extends from said plane. In one embodiment, at least one solenoid is disposed near the apparatus to magnetize the plasma.

摘要翻译： 一种用于等离子体蚀刻材料层的装置，包括具有从第二区域突出的第一区域的阳极，其中所述第二区域限定平面，并且所述第一区域从所述平面延伸。 在一个实施例中，至少一个螺线管设置在设备附近以磁化等离子体。

公开(公告)号：US20030106646A1

公开(公告)日：2003-06-12

申请号：US10106008

申请日：2002-03-21

申请人： Applied Materials, Inc.

发明人： Shawming Ma ,  Mahmoud Dahimene ,  Claes Bjorkman

IPC分类号： C23C016/00 ,  C23F001/00

CPC分类号： H01J37/32623 ,  C23C16/4585 ,  H01J37/32642

摘要： Methods and apparatuses for reducing electrical arcing currents or electron emissions to a wafer or to components in a plasma chamber are provided. An insert for use in a process chamber having a wafer support is disclosed. The insert comprises a composite member formed of a first material, such as for example, silicon, and a second material, such as for example, SiO2, having a greater electrical impedance than the first material. The composite member has a surface which is adapted to be disposed adjacent to the wafer support, and which is made of the second material. In one aspect, the process chamber further has an outer member adapted to surround the wafer support. The composite member has a surface which is adapted to be disposed adjacent to the outer member and which is made of the second material. In another aspect, the composite member has a surface which is adapted to be disposed adjacent to a semiconductor wafer and which is made of the second material.

摘要翻译： 提供了用于降低电弧电流或电子发射到晶片或等离子体室中的组件的方法和装置。 公开了一种用于具有晶片支撑件的处理室中的插入件。 插入件包括由诸如硅的第一材料形成的复合构件和具有比第一材料更大的电阻抗的第二材料，例如SiO 2。 复合构件具有适于邻近晶片支撑件设置并由第二材料制成的表面。 在一个方面，处理室还具有适于包围晶片支撑件的外部构件。 复合构件具有适于邻近外部构件设置并由第二材料制成的表面。 在另一方面，复合构件具有适于邻近半导体晶片设置并由第二材料制成的表面。

公开(公告)号：US20040180556A1

公开(公告)日：2004-09-16

申请号：US10387160

申请日：2003-03-11

申请人： Applied Materials, Inc.

发明人： Kang-Lie Chiang ,  Mahmoud Dahimene ,  Xiaoye Zhao ,  Yan Ye ,  Gerardo A. Delgadino ,  Hoiman Hung ,  Li-Qun Xia ,  Giuseppina R. Conti

IPC分类号： H01L021/31 ,  H01L021/469

CPC分类号： H01L21/31138 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76831

摘要： A method of treating a dielectric layer having a low dielectric constant, where the dielectric layer has been processed in a manner that causes a change in the dielectric constant of an affected region of the layer. The treatment of the affected region may comprise etching, sputtering, annealing, or combinations thereof. The treatment returns the dielectric constant of the dielectric layer to substantially the dielectric constant that existed before processing.

摘要翻译： 一种处理具有低介电常数的电介质层的方法，其中介电层已经以导致该层的受影响区域的介电常数变化的方式被处理。 受影响区域的处理可以包括蚀刻，溅射，退火或其组合。 处理使介电层的介电常数恢复到加工前存在的介电常数。

公开(公告)号：US20030006008A1

公开(公告)日：2003-01-09

申请号：US10205870

申请日：2002-07-26

申请人： Applied Materials, Inc.

发明人： Keiji Horioka ,  Chun Yan ,  Taeho Shin ,  Roger Alan Lindley ,  Panyin Hughes ,  Douglas H. Burns ,  Evans Y. Lee ,  Bryan Y. Pu ,  Qi Li ,  Mahmoud Dahimene

IPC分类号： C23F001/00 ,  H01L021/306 ,  C23C016/00

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.

摘要翻译： 一种用于控制磁增强等离子体反应器内的磁场梯度的方法和装置。 该装置包括支撑外壳内的晶片的阴极基座，靠近外壳定位的多个电磁体，用于在外壳中产生磁场，并且磁场控制元件位于电磁体附近，用于控制靠近特定区域的磁场 的晶片。