-
公开(公告)号：US12057329B2
公开(公告)日：2024-08-06
申请号：US15828112
申请日：2017-11-30
IPC分类号： H01L21/00 , H01J37/32 , H01L21/311 , H01L21/3115 , H01L21/67 , H01L21/683 , H01L21/687 , H01L21/3105
CPC分类号： H01L21/67069 , H01J37/32146 , H01J37/32706 , H01L21/31116 , H01L21/3115 , H01L21/6831 , H01L21/6833 , H01L21/68735 , H01J2237/334 , H01L21/3105
摘要： Semiconductor systems and methods may include methods of performing selective etches that include modifying a material on a semiconductor substrate. The substrate may have at least two exposed materials on a surface of the semiconductor substrate. The methods may include forming a low-power plasma within a processing chamber housing the semiconductor substrate. The low-power plasma may be a radio-frequency (“RF”) plasma, which may be at least partially formed by an RF bias power operating between about 10 W and about 100 W in embodiments. The RF bias power may also be pulsed at a frequency below about 5,000 Hz. The methods may also include etching one of the at least two exposed materials on the surface of the semiconductor substrate at a higher etch rate than a second of the at least two exposed materials on the surface of the semiconductor substrate.
-
公开(公告)号：US20180082861A1
公开(公告)日：2018-03-22
申请号：US15828112
申请日：2017-11-30
IPC分类号： H01L21/67 , H01L21/687 , H01L21/311 , H01L21/3115 , H01L21/683
摘要： Semiconductor systems and methods may include methods of performing selective etches that include modifying a material on a semiconductor substrate. The substrate may have at least two exposed materials on a surface of the semiconductor substrate. The methods may include forming a low-power plasma within a processing chamber housing the semiconductor substrate. The low-power plasma may be a radio-frequency (“RF”) plasma, which may be at least partially formed by an RF bias power operating between about 10 W and about 100 W in embodiments. The RF bias power may also be pulsed at a frequency below about 5,000 Hz. The methods may also include etching one of the at least two exposed materials on the surface of the semiconductor substrate at a higher etch rate than a second of the at least two exposed materials on the surface of the semiconductor substrate.
-
公开(公告)号：US09865484B1
公开(公告)日：2018-01-09
申请号：US15197060
申请日：2016-06-29
IPC分类号： H01L21/67 , H01L21/683 , H01L21/687 , H01L21/311 , H01L21/3115
CPC分类号： H01L21/67069 , H01J37/32146 , H01J37/32706 , H01J2237/334 , H01L21/3105 , H01L21/31116 , H01L21/3115 , H01L21/6831 , H01L21/6833 , H01L21/68735
摘要： Semiconductor systems and methods may include methods of performing selective etches that include modifying a material on a semiconductor substrate. The substrate may have at least two exposed materials on a surface of the semiconductor substrate. The methods may include forming a low-power plasma within a processing chamber housing the semiconductor substrate. The low-power plasma may be a radio-frequency (“RF”) plasma, which may be at least partially formed by an RF bias power operating between about 10 W and about 100 W in embodiments. The RF bias power may also be pulsed at a frequency below about 5,000 Hz. The methods may also include etching one of the at least two exposed materials on the surface of the semiconductor substrate at a higher etch rate than a second of the at least two exposed materials on the surface of the semiconductor substrate.
-
公开(公告)号：US20180005850A1
公开(公告)日：2018-01-04
申请号：US15197060
申请日：2016-06-29
IPC分类号： H01L21/67 , H01L21/683 , H01L21/3115 , H01L21/687 , H01L21/311
CPC分类号： H01L21/67069 , H01J37/32146 , H01J37/32706 , H01J2237/334 , H01L21/3105 , H01L21/31116 , H01L21/3115 , H01L21/6831 , H01L21/6833 , H01L21/68735
摘要： Semiconductor systems and methods may include methods of performing selective etches that include modifying a material on a semiconductor substrate. The substrate may have at least two exposed materials on a surface of the semiconductor substrate. The methods may include forming a low-power plasma within a processing chamber housing the semiconductor substrate. The low-power plasma may be a radio-frequency (“RF”) plasma, which may be at least partially formed by an RF bias power operating between about 10 W and about 100 W in embodiments. The RF bias power may also be pulsed at a frequency below about 5,000 Hz. The methods may also include etching one of the at least two exposed materials on the surface of the semiconductor substrate at a higher etch rate than a second of the at least two exposed materials on the surface of the semiconductor substrate.
-
公开(公告)号：US10566177B2
公开(公告)日：2020-02-18
申请号：US15349433
申请日：2016-11-11
IPC分类号： H01J37/34 , C23C14/34 , C23C14/35 , H01L21/683
摘要： Embodiments presented herein relate to a pulse control system for a substrate processing system. The pulse control system includes a power source, a system controller, and a pulse shape controller. The pulse shape controller is coupled to the power source and in communication with the system controller. The pulse shape controller includes a first switch assembly and a second switch assembly. The first switch assembly includes a first switch having a first end and a second end. The first switch is configurable between an open state and a closed state. The second switch assembly includes a second switch having a first end and a second end. The first switch is in the closed state and the second switch is in the open state. The first switch in the closed state is configured to allow a pulse supplied by the power source to transfer through the pulse shape controller.
-
-
-
-
搜索结果
5 条记录 (耗时 0.023 秒)
