公开(公告)号：US20240055244A1

公开(公告)日：2024-02-15

申请号：US17885277

申请日：2022-08-10

Applicant: Applied Materials, Inc.

Inventor： Shreeram Jyoti DASH ,  Michael Thomas NICHOLS

IPC: H01J37/32

CPC classification number: H01J37/3299 ,  H01J2237/24564 ,  H01J2237/3341

Abstract: Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a method for waveform generation, which generally includes delivering a first waveform with an associated setpoint from an energy source; detecting at least one characteristic of the first waveform; estimating a voltage decay during a portion of a pulse during the first waveform; calculating a compensation factor; and adjusting the at least one characteristic using the compensation factor to adjust a voltage decay.

公开(公告)号：US20240162007A1

公开(公告)日：2024-05-16

申请号：US17984772

申请日：2022-11-10

Applicant: Applied Materials, Inc.

Inventor： Deyang LI ,  Sunil SRINIVASAN ,  Yi-Chuan CHOU ,  Shahid RAUF ,  Kuan-Ting LIU ,  Jason A. KENNEY ,  Chung LIU ,  Olivier P. JOUBERT ,  Shreeram Jyoti DASH ,  Aaron EPPLER ,  Michael Thomas NICHOLS

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32128 ,  H01J37/32146 ,  H01J2237/3341 ,  H01J2237/3346

Abstract: Embodiments of the present disclosure generally relate to a system used in a semiconductor device manufacturing process. More specifically, embodiments provided herein generally include apparatus and methods for synchronizing and controlling the delivery of an RF bias signal and a pulsed voltage waveform to one or more electrodes within a plasma processing chamber. The apparatus and methods disclosed herein can be useful to at least minimize or eliminate a microloading effect created while processing small dimension features that have differing densities across various regions of a substrate. The plasma processing methods and apparatus described herein are configured to improve the control of various characteristics of the generated plasma and control an ion energy distribution (IED) of the plasma generated ions that interact with a surface of a substrate during plasma processing. The ability to synchronize and control waveform characteristics of a voltage waveform bias established on a substrate during processing allows for an improved control of the generated plasma and process of forming, for example, high-aspect ratio features in the surface of the substrate by a reactive ion etching process. As a result, greater precision for plasma processing can be achieved, which is described herein in more detail.

公开(公告)号：US20180061618A1

公开(公告)日：2018-03-01

申请号：US15684230

申请日：2017-08-23

Applicant: Applied Materials, Inc.

Inventor： Michael Thomas NICHOLS ,  Imad YOUSIF ,  John Anthony O'MALLEY, III ,  Rajinder DHINDSA ,  Steven E. BABAYAN

IPC: H01J37/32

CPC classification number: H01J37/32807 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32633 ,  H01J37/32715

Abstract: Embodiments of the present disclosure relate to a plasma screen used in a plasma processing chamber with improved flow conductance and uniformity. One embodiment provides a plasma screen. The plasma screen includes a circular plate having a center opening and an outer diameter. A plurality of cut outs formed through the circular plate. The plurality of cut outs are arranged in two or more concentric circles. Each concentric circle includes equal number of cut outs.

公开(公告)号：US20180061616A1

公开(公告)日：2018-03-01

申请号：US15687737

申请日：2017-08-28

Applicant: Applied Materials, Inc.

Inventor： Michael Thomas NICHOLS ,  Imad YOUSIF ,  John Anthony O'MALLEY, III ,  Steven E. BABAYAN

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32834 ,  H01J37/32862 ,  H01J2237/006 ,  H01J2237/334

Abstract: Embodiments disclosed herein generally relate to a pumping system for a plasma processing apparatus. The pumping system includes a first pump path, a second pump path, a first valve, and a second valve. The first pump path couples an opening of a substrate support assembly of the processing chamber to an exhaust port of the processing chamber. The second pump path couples the opening of the substrate support assembly to an evacuation region of the processing chamber. The first valve is positioned in the first pump path. The first valve is configurable between a first state and a second state. The second valve is positioned in the second pump path. The second valve is configurable between the first state and the second state.