公开(公告)号：US20230162354A1

公开(公告)日：2023-05-25

申请号：US17993144

申请日：2022-11-23

Applicant: Applied Materials, Inc.

Inventor： Tapashree ROY ,  Shubhayan BHATTACHARYA ,  Kiran Rangaswamy AATRE ,  Sumit Kumar JHA ,  Suraj RENGARAJAN ,  Riya DUTTA

IPC: G06T7/00 ,  G06V10/26 ,  G06V10/764 ,  G06V10/82

CPC classification number: G06T7/0012 ,  G06V10/26 ,  G06V10/764 ,  G06V10/82 ,  G06T2207/10036 ,  G06T2207/30024

Abstract: According to certain embodiments, a system for detection of anomalous cells, comprises a hyperspectral imaging system; a memory having executable instructions stored thereon; and a processor configured to execute the executable instructions to cause the system to: receive a patient hyperspectral image comprising a pixel spectral signature for each pixel of the received patient hyperspectral image; classify the patient hyperspectral image by a machine learning model trained to classify hyperspectral images based on pixel spectral signatures; and provide an indication that the patient hyperspectral image contains an anomalous cell type, responsive to the classifying.

公开(公告)号：US20180327893A1

公开(公告)日：2018-11-15

申请号：US16033166

申请日：2018-07-11

Applicant: Applied Materials, Inc.

Inventor： Peijun DING ,  Rong TAO ,  Zheng XU ,  Daniel C. LUBBEN ,  Suraj RENGARAJAN ,  Michael A. MILLER ,  Arvind SUNDARRAJAN ,  Xianmin TANG ,  John C. FORSTER ,  Jianming FU ,  Roderick C. MOSELY ,  Fusen CHEN ,  Praburam GOPALRAJA

IPC: C23C14/04 ,  C23C14/56 ,  C23C14/35 ,  H01J37/32 ,  H01J37/34 ,  H01L21/285 ,  H01L21/768 ,  C23C14/34

CPC classification number: C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

公开(公告)号：US20230408413A1

公开(公告)日：2023-12-21

申请号：US18334186

申请日：2023-06-13

Applicant: Applied Materials, Inc.

Inventor： Viswanath BAVIGADDA ,  Shubhayan BHATTACHARYA ,  Tapashree ROY ,  Ankur KADAM ,  Kiran Rangaswamy AATRE ,  Suraj RENGARAJAN

IPC: G01N21/64 ,  G01N21/39

CPC classification number: G01N21/6456 ,  G01N21/643 ,  G01N21/39 ,  G01N2021/399 ,  G01N2201/0633 ,  G01N2201/1235 ,  G01N21/94

Abstract: In one embodiment, an apparatus to identify chemical and spatial properties of nanoparticles in a semiconductor cleaning solution, comprises a broadband light source to provide an excitation beam; a focusing lens in a path of the excitation beam to form a focused excitation beam; a sample cell, the sample cell configured to hold a cleaning solution and one or more insoluble analytes-of-interest therein; a plurality of optical lens in the path of one or more fluorescence signals to focus the one or more fluorescence signals; and an imaging device, wherein the imaging device captures the one or more fluorescence signals to form a plurality of images that contain both spatial data and spectral data about the one or more insoluble analytes-of-interest.

公开(公告)号：US20140305802A1

公开(公告)日：2014-10-16

申请号：US14205260

申请日：2014-03-11

Applicant: Applied Materials, Inc.

Inventor： Peijun DING ,  Rong TAO ,  Zheng XU ,  Daniel C. LUBBEN ,  Suraj RENGARAJAN ,  Michael A. MILLER ,  Arvind SUNDARRAJAN ,  Xianmin TANG ,  John C. FORSTER ,  Jianming FU ,  Roderick C. MOSELY ,  Fusen CHEN ,  Praburam GOPALRAJA

IPC: C23C14/04 ,  C23C14/35

CPC classification number: C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

Abstract translation: 用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者 交替地，在相同或不同的室中。 此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。 组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。 此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。 在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。 磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。 辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。 辅助磁体可以是永磁体或电磁体。