公开(公告)号：US20160357107A1

公开(公告)日：2016-12-08

申请号：US14733923

申请日：2015-06-08

Applicant: Applied Materials, Inc.

Inventor： Douglas A. BUCHBERGER, JR. ,  Sang Ki NAM ,  Viachslav BABAYAN ,  Christine Y OUYANG ,  Ludovic GODET ,  Srinivas D. NEMANI

IPC: G03F7/20

CPC classification number: G03F7/0045 ,  G03F7/38 ,  G03F7/70 ,  G03F7/70866

Abstract: Methods disclosed herein provide apparatus and method for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes. In one embodiment, an apparatus includes a processing chamber comprising a substrate support having a substrate supporting surface, a heat source embedded in the substrate support configured to heat a substrate positioned on the substrate supporting surface, an electrode assembly configured to generate an electric field in a direction substantially perpendicular to the substrate supporting surface, wherein the electrode assembly is positioned opposite the substrate supporting surface having a downward surface facing the substrate supporting surface, wherein the electrode assembly is spaced apart from substrate support defining a processing volume between the electrode assembly and the substrate supporting surface, and a confinement ring disposed on an edge of the substrate support or the electrode assembly configured to retain an intermediate medium.

Abstract translation: 本文公开的方法提供了在光刻工艺期间没有气隙介入的情况下将电场和/或磁场施加到光致抗蚀剂层的装置和方法。 在一个实施例中，一种设备包括处理室，该处理室包括具有基板支撑表面的基板支撑件，嵌入在基板支撑件中的热源，该热源构造成加热位于基板支撑表面上的基板;电极组件， 基本上垂直于所述基板支撑表面的方向，其中所述电极组件与所述基板支撑表面相对定位，所述基板支撑表面具有面向所述基板支撑表面的向下表面，其中所述电极组件与限定所述电极组件和 衬底支撑表面以及设置在衬底支撑件的边缘上的限制环或被配置为保持中间介质的电极组件。

公开(公告)号：US20160299435A1

公开(公告)日：2016-10-13

申请号：US15091247

申请日：2016-04-05

Applicant: Applied Materials, Inc.

Inventor： Christine Y. OUYANG ,  Ludovic GODET ,  Sang Ki NAM

IPC: G03F7/40 ,  G03F7/20

CPC classification number: G03F7/2053 ,  G03F7/168

Abstract: A method and apparatus for exposing a photoresist in the presence of an electric field using a high power continuous wave source as a radiation source is disclosed herein. In one embodiment, a processing region includes a stage, a translation mechanism, a continuous wave electromagnetic module, and plurality of electrode assemblies. The continuous wave electromagnetic module includes a continuous wave electromagnetic radiation source in the form of a high power continuous wave electromagnetic laser. An electric field is applied to the surface of the substrate using the plurality of electrode assemblies while the continuous wave electromagnetic radiation source selectively irradiates the surface of the substrate.

Abstract translation: 本文公开了一种使用高功率连续波源作为辐射源在存在电场的情况下使光致抗蚀剂曝光的方法和装置。 在一个实施例中，处理区域包括平台，平移机构，连续波电磁模块和多个电极组件。 连续波电磁模块包括大功率连续波电磁激光器形式的连续波电磁辐射源。 使用多个电极组件将电场施加到衬底的表面，同时连续波电磁辐射源选择性地照射衬底的表面。

公开(公告)号：US20160291476A1

公开(公告)日：2016-10-06

申请号：US14677552

申请日：2015-04-02

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Sang Ki NAM ,  Christine Y. OUYANG

IPC: G03F7/40

CPC classification number: G03F7/38

Abstract: Embodiments described herein generally relate to methods for mitigating patterning defects. More specifically, embodiments described herein relate to utilizing field guided post exposure bake processes to mitigate microbridge photoresist defects. An electric field may be applied to a substrate being processed during a post exposure bake process. Photoacid generated as a result of the exposure may be moved along a direction defined by the electric field. The movement of the photoacid may contact microbridge defects and facilitate the removal of the microbridge defects from the surface of a substrate.

Abstract translation: 本文描述的实施方案一般涉及减轻图案化缺陷的方法。 更具体地，本文所述的实施例涉及利用场引导后曝光烘烤工艺来减轻微桥光刻胶缺陷。 可以在后曝光烘烤处理中将电场施加到正在处理的基板。 作为曝光结果产生的光酸可以沿着由电场限定的方向移动。 光致酸的运动可能会接触微桥缺陷，并有助于从基片的表面去除微桥缺陷。

公开(公告)号：US20180107117A1

公开(公告)日：2018-04-19

申请号：US15294348

申请日：2016-10-14

Applicant: Applied Materials, Inc.

Inventor： Christine Y. OUYANG ,  Sang Ki NAM ,  Ludovic GODET

IPC: G03F7/20 ,  G03F7/004 ,  G03F7/32

CPC classification number: G03F7/203 ,  G03F7/0045 ,  G03F7/2004 ,  G03F7/325

Abstract: Methods disclosed herein provide apparatus and methods for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes. In one embodiment, an apparatus includes a processing chamber configured to apply an electric field to a substrate via a non-gas phase intermediate medium. Methods described herein include dissociation of a photoacid generator to generate anions and cations. The anions may be moved within the photoresist layer by the electric field to more precisely control the speed and location of acid generation and regeneration processes.

公开(公告)号：US20180046085A1

公开(公告)日：2018-02-15

申请号：US15793935

申请日：2017-10-25

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Sang Ki NAM ,  Christine Y. OUYANG

IPC: G03F7/38

CPC classification number: G03F7/38

Abstract: Embodiments described herein generally relate to methods for mitigating patterning defects. More specifically, embodiments described herein relate to utilizing field guided post exposure bake processes to mitigate microbridge photoresist defects. An electric field may be applied to a substrate being processed during a post exposure bake process. Photoacid generated as a result of the exposure may be moved along a direction defined by the electric field. The movement of the photoacid may contact microbridge defects and facilitate the removal of the microbridge defects from the surface of a substrate.

公开(公告)号：US20160109813A1

公开(公告)日：2016-04-21

申请号：US14581632

申请日：2014-12-23

Applicant: APPLIED MATERIALS, INC.

Inventor： Sang Ki NAM ,  Peng XIE ,  Qiwei LIANG ,  Ludovic GODET

IPC: G03F7/20 ,  G03F7/40

CPC classification number: G03F7/70733 ,  G03F7/38 ,  G03F7/40 ,  G03F7/70325

Abstract: A method of processing a substrate is disclosed herein. The method includes applying a photoresist layer comprising a photoacid generator to a substrate, wherein a first portion of the photoresist layer has been exposed unprotected by a photomask to a radiation light in a lithographic exposure process. The method also includes applying an electric field to alter movement of photoacid generated from the photoacid generator substantially in a vertical direction, wherein the electric field is applied by a first alternating pair of a positive voltage electrode and a negative voltage electrode and a second alternating pair of a positive voltage electrode and a negative voltage electrode.

Abstract translation: 本文公开了一种处理衬底的方法。 该方法包括将包含光致酸产生剂的光致抗蚀剂层施加到基底上，其中光致抗蚀剂层的第一部分已经在光刻曝光工艺中被光掩模曝光而不被辐射光照射。 该方法还包括施加电场以改变基本上沿垂直方向从光致酸产生器产生的光酸的移动，其中电场由正电压电极和负电压电极的第一交替对和第二交替对施加 的正电压电极和负电压电极。

公开(公告)号：US20170200587A1

公开(公告)日：2017-07-13

申请号：US15399084

申请日：2017-01-05

Applicant: Applied Materials, Inc.

Inventor： Ludovic GODET ,  Jun XUE ,  Sang Ki NAM

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32082 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32559 ,  H01J37/32568 ,  H01J2237/334 ,  H01L21/3065

Abstract: Implementations described herein relate to apparatus and methods for performing atomic layer etching (ALE). Pulsed plasma generation and subsequent bias application to plasma afterglow may provide for improved ALE characteristics. Apparatus described herein provide for plasma generation from one or more plasma sources and biasing of plasma afterglow to facilitate material removal from a substrate.

公开(公告)号：US20170184976A1

公开(公告)日：2017-06-29

申请号：US15290992

申请日：2016-10-11

Applicant: Applied Materials, Inc.

Inventor： Christine Y. OUYANG ,  Sang Ki NAM ,  Ludovic GODET

IPC: G03F7/20

CPC classification number: G03F7/38 ,  G03F7/70325

Abstract: Methods disclosed herein provide apparatus and methods for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes. In one embodiment, an apparatus includes a processing chamber configured to apply an electric field to a substrate via a non-gas phase intermediate medium. Methods described herein include dissociation of a photoacid generator to generate anions and cations. The anions may be moved within the photoresist layer by the electric field to more precisely control the speed and location of acid generation and regeneration processes.

公开(公告)号：US20160053376A1

公开(公告)日：2016-02-25

申请号：US14489398

申请日：2014-09-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Sang Ki NAM ,  Tae Seung CHO ,  Ludovic GODET ,  Srinivas D. NEMANI

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/50

CPC classification number: C23C16/45565 ,  C23C16/5096 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244

Abstract: The present invention provides an apparatus having a plasma profile control plate disposed in a plasma processing chamber so as to locally alter plasma density to provide uniform plasma distribution across a substrate surface during processing. In one embodiment, a process kit includes a plate configured to be disposed in a plasma processing chamber, a plurality of apertures formed therethrough, the apertures configured to permit processing gases to flow through the plate, and an array of unit cells including at least one aperture formed in the plate, wherein each unit cell has an electrode assembly individually controllable relative to electrode assemblies disposed in at least two other unit cells.

Abstract translation: 本发明提供了一种装置，其具有设置在等离子体处理室中的等离子体轮廓控制板，从而局部地改变等离子体密度，以在处理期间在衬底表面上提供均匀的等离子体分布。 在一个实施例中，处理套件包括被配置为设置在等离子体处理室中的板，通过其形成的多个孔，所述孔被构造成允许处理气体流过板，以及包括至少一个 孔，其中每个单元电池具有相对于设置在至少两个其它单元电池中的电极组件可独立控制的电极组件。