-
公开(公告)号：US20220127717A1
公开(公告)日：2022-04-28
申请号：US17081494
申请日：2020-10-27
Applicant: Applied Materials, Inc.
Inventor： Yong Wang , Doreen Wei Ying Yong , Bhaskar Jyoti Bhuyan , John Sudijono
Abstract: Selective deposition methods are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a head group and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.
-
公开(公告)号：US20230142926A1
公开(公告)日：2023-05-11
申请号：US18096347
申请日：2023-01-12
Applicant: Applied Materials, Inc.
Inventor： Yong Wang , Doreen Wei Ying Yong , Bhaskar Jyoti Bhuyan , John Sudijono
CPC classification number: C23C16/0227 , C23C16/04 , C23C22/82 , C23C16/56 , C23C22/77
Abstract: Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.
-
公开(公告)号：US11987875B2
公开(公告)日：2024-05-21
申请号：US18096347
申请日：2023-01-12
Applicant: Applied Materials, Inc.
Inventor： Yong Wang , Doreen Wei Ying Yong , Bhaskar Jyoti Bhuyan , John Sudijono
CPC classification number: C23C16/0227 , C23C16/04 , C23C16/56 , C23C22/77 , C23C22/82
Abstract: Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.
-
公开(公告)号：US11621161B2
公开(公告)日：2023-04-04
申请号：US17081482
申请日：2020-10-27
Applicant: Applied Materials, Inc. , National University of Singapore
Inventor： Yong Wang , Andrea Leoncini , Doreen Wei Ying Yong , Bhaskar Jyoti Bhuyan , John Sudijono
IPC: H01L21/02 , C23C16/455
Abstract: Methods of selectively depositing films on substrates are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Also described is exposing a substrate surface comprising a metal surface and a dielectric surface to a docking precursor to form a passivation film.
-
公开(公告)号：US11569088B2
公开(公告)日：2023-01-31
申请号：US17081498
申请日：2020-10-27
Applicant: Applied Materials, Inc. , National University of Singapore
Inventor： Yong Wang , Andrea Leoncini , Doreen Wei Ying Yong , John Sudijono
Abstract: Methods of enhancing selective deposition are described. In some embodiments, a passivation layer is deposited on a metal surface before deposition of a dielectric material. A block I molecule is deposited on a metal surface, and a block II molecule is reacted with the block I molecule to form a passivation layer.
-
Patent Agency Ranking
公开(公告)号：US20220130664A1
公开(公告)日：2022-04-28
申请号：US17081482
申请日：2020-10-27
Applicant: Applied Materials, Inc. , National University of Singapore
Inventor： Yong Wang , Andrea Leoncini , Doreen Wei Ying Yong , Bhaskar Jyoti Bhuyan , John Sudijono
IPC: H01L21/02 , C23C16/455
Abstract: Methods of selectively depositing films on substrates are described. A passivation film is deposited on a metal surface before deposition of a dielectric material. Also described is exposing a substrate surface comprising a metal surface and a dielectric surface to a docking precursor to form a passivation film.
-
公开(公告)号：US20220130660A1
公开(公告)日：2022-04-28
申请号：US17081506
申请日：2020-10-27
Applicant: Applied Materials, Inc. , National University of Singapore
Inventor： Andrea Leoncini , Yong Wang , Doreen Wei Ying Yong
Abstract: Selective deposition methods are described. An exemplary method comprises exposing the substrate comprising a first surface and a second surface to an anchor reactant and selectively depositing the anchor reactant on the first surface as a seed layer, wherein the anchor reactant comprises an ethynyl derivative with a headgroup that selectively targets the first surface.
-
公开(公告)号：US20220130659A1
公开(公告)日：2022-04-28
申请号：US17081498
申请日：2020-10-27
Applicant: Applied Materials, Inc. , National University of Singapore
Inventor： Yong Wang , Andrea Leoncini , Doreen Wei Ying Yong , John Sudijono
IPC: H01L21/02
Abstract: Methods of enhancing selective deposition are described. In some embodiments, a passivation layer is deposited on a metal surface before deposition of a dielectric material. A block I molecule is deposited on a metal surface, and a block II molecule is reacted with the block I molecule to form a passivation layer.
-
公开(公告)号：US20240271272A1
公开(公告)日：2024-08-15
申请号：US18635639
申请日：2024-04-15
Applicant: Applied Materials, Inc.
Inventor： Yong Wang , Doreen Wei Ying Yong , Bhaskar Jyoti Bhuyan , John Sudijono
CPC classification number: C23C16/0227 , C23C16/04 , C23C16/56 , C23C22/77 , C23C22/82
Abstract: Methods of patterning semiconductor devices comprising selective deposition methods are described. A blocking layer is deposited on a metal surface of a semiconductor device before deposition of a dielectric material on a dielectric surface. Methods include exposing a substrate surface including a metal surface and a dielectric surface to a heterocyclic reactant comprising a headgroup and a tailgroup in a processing chamber and selectively depositing the heterocyclic reactant on the metal surface to form a passivation layer, wherein the heterocyclic headgroup selectively reacts and binds to the metal surface.
-
公开(公告)号：US11515154B2
公开(公告)日：2022-11-29
申请号：US17081506
申请日：2020-10-27
Applicant: Applied Materials, Inc. , National University of Singapore
Inventor： Andrea Leoncini , Yong Wang , Doreen Wei Ying Yong
Abstract: Selective deposition methods are described. An exemplary method comprises exposing the substrate comprising a first surface and a second surface to an anchor reactant and selectively depositing the anchor reactant on the first surface as a seed layer, wherein the anchor reactant comprises an ethynyl derivative with a headgroup that selectively targets the first surface.
-
-
-
-
-
-
-
-
-
Search Results
10
records
(took 0.025 seconds)
