公开(公告)号：US20220213590A1

公开(公告)日：2022-07-07

申请号：US17194956

申请日：2021-03-08

Applicant: Applied Materials, Inc.

Inventor： Uday PAI ,  Yuan XUE ,  Abhijeet Laxman SANGLE ,  Vijay Bhan SHARMA ,  Suresh Chand SETH ,  Bharatwaj Ramakrishnan ,  Soundarrajan JEMBULINGAM ,  Naveen CHANNARAYAPATNA PUTTANNA ,  Ankur KADAM ,  Yi YANG

IPC: C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  H01J37/34

Abstract: Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber includes a shield comprising an inner wall with an innermost diameter configured to surround a target when disposed in the physical vapor deposition chamber, wherein a ratio of a surface area of the shield to a planar area of the inner diameter is about 3 to about 10.

公开(公告)号：US20220406565A1

公开(公告)日：2022-12-22

申请号：US17554645

申请日：2021-12-17

Applicant: Applied Materials, Inc.

Inventor： Jian Janson CHEN ,  Yi YANG ,  Chong MA ,  Yuan XUE

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/505

Abstract: Methods and apparatus for controlling plasma in a process chamber leverage an RF termination filter which provides an RF path to ground. In some embodiments, an apparatus may include a DC filter configured to be electrically connected between a DC power supply and electrodes embedded in an electrostatic chuck where the DC filter is configured to block DC current from the DC power supply from flowing through the DC filter and an RF termination filter configured to be electrically connected between the DC filter and an RF ground of the process chamber where the RF termination filter is configured to adjust an impedance of the electrodes relative to the RF ground.

公开(公告)号：US20230320223A1

公开(公告)日：2023-10-05

申请号：US18022652

申请日：2020-08-24

Applicant: Applied Materials, Inc.

Inventor： Abhijeet Laxman SANGLE ,  Vijay Bhan SHARMA ,  Yuan XUE ,  Ankur KADAM ,  Bharatwaj RAMAKRISHNAN ,  Uday PAI ,  Nilesh PATIL

IPC: H10N30/50 ,  H10N30/093 ,  H10N30/00 ,  H10N30/853 ,  H10N30/87

CPC classification number: H10N30/50 ,  H10N30/093 ,  H10N30/1051 ,  H10N30/8554 ,  H10N30/877

Abstract: Disclosed are methods and apparatus for depositing uniform layers on a substrate (201) for piezoelectric applications. An ultra-thin seed layer (308) having a uniform thickness from center to edge thereof is deposited on a substrate (201). A template layer (310) closely matching the crystal structure of a subsequently formed piezoelectric material layer (312) is deposited on a substrate (201). The uniform thickness and orientation of the seed layer (308) and the template layer (310), in turn, facilitate the growth of piezoelectric materials with improved crystallinity and piezoelectric properties.