公开(公告)号：US20230032638A1

公开(公告)日：2023-02-02

申请号：US17967556

申请日：2022-10-17

申请人： Applied Materials, Inc.

发明人： Abhijeet Laxman Sangle ,  Vijay Bhan Sharma ,  Ankur Kadam ,  Bharatwaj Ramakrishnan ,  Visweswaren Sivaramakrishnan ,  Yuan Xue

IPC分类号： H01L41/319 ,  C23C14/54 ,  C23C14/06 ,  H01L41/08 ,  C23C14/35 ,  H01L41/187 ,  H01L41/047 ,  H01L41/316

摘要： A physical vapor deposition system includes a deposition chamber, a support to hold a substrate in the deposition chamber, a target in the chamber, a power supply configured to apply power to the target to generate a plasma in the chamber to sputter material from the target onto the substrate to form a piezoelectric layer on the substrate, and a controller configured to cause the power supply to alternate between deposition phases in which the power supply applies power to the target and cooling phases in which power supply does not apply power to the target. Each deposition phase lasts at least 30 seconds and each cooling phase lasts at least 30 seconds.

公开(公告)号：US20210143320A1

公开(公告)日：2021-05-13

申请号：US16691570

申请日：2019-11-21

申请人： Applied Materials, Inc

发明人： Abhijeet Laxman Sangle ,  Vijay Bhan Sharma ,  Yuan Xue ,  Uday Pai ,  Bharatwaj Ramakrishnan ,  Ankur Kadam

IPC分类号： H01L41/319 ,  H01L41/047 ,  H01L41/08 ,  H01L41/187 ,  H01L41/29 ,  H01L41/316

摘要： A piezoelectric device includes a substrate, a thermal oxide layer on the substrate, a metal or metal oxide adhesion layer on the thermal oxide layer, a lower electrode on the metal oxide adhesion layer, a seed layer on the lower electrode, a lead magnesium niobate-lead titanate (PMNPT) piezoelectric layer on the seed layer, and an upper electrode on the PMNPT piezoelectric layer.

公开(公告)号：US20220213590A1

公开(公告)日：2022-07-07

申请号：US17194956

申请日：2021-03-08

申请人： Applied Materials, Inc.

发明人： Uday PAI ,  Yuan XUE ,  Abhijeet Laxman SANGLE ,  Vijay Bhan SHARMA ,  Suresh Chand SETH ,  Bharatwaj Ramakrishnan ,  Soundarrajan JEMBULINGAM ,  Naveen CHANNARAYAPATNA PUTTANNA ,  Ankur KADAM ,  Yi YANG

IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  H01J37/34

摘要： Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber includes a shield comprising an inner wall with an innermost diameter configured to surround a target when disposed in the physical vapor deposition chamber, wherein a ratio of a surface area of the shield to a planar area of the inner diameter is about 3 to about 10.

公开(公告)号：US11489105B2

公开(公告)日：2022-11-01

申请号：US16691569

申请日：2019-11-21

申请人： Applied Materials, Inc

发明人： Abhijeet Laxman Sangle ,  Vijay Bhan Sharma ,  Ankur Kadam ,  Bharatwaj Ramakrishnan ,  Visweswaren Sivaramakrishnan ,  Yuan Xue

IPC分类号： C23C14/35 ,  H01L41/319 ,  H01L41/047 ,  H01L41/08 ,  H01L41/316 ,  C23C14/06 ,  C23C14/54 ,  H01L41/187

摘要： A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400° C., and thermally annealing the substrate at a temperature above 500° C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.

公开(公告)号：US20220320417A1

公开(公告)日：2022-10-06

申请号：US17220136

申请日：2021-04-01

申请人： Applied Materials, Inc.

发明人： Abhijeet Laxman Sangle ,  Suresh Chand Seth ,  Vijay Bhan Sharma ,  Bharatwaj Ramakrishnan ,  Ankur Anant Kadam

IPC分类号： H01L41/316 ,  H01L41/18 ,  H01L41/29

摘要： Doped-aluminum nitride (doped-AlN) films and methods of manufacturing doped-AlN films are disclosed. Some methods comprise forming alternating pinning layers and doped-AlN layers including a dopant selected from the group consisting of Sc, Y, Hf, Mg, Zr and Cr, wherein the pinning layers pin the doped-AlN layers to a c-axis orientation. Some methods include forming a conducting layer including a material selected from the group consisting of Mo, Pt, Ta, Ru, LaNiO3 and SrRuO3. Some methods include forming a thermal oxide layer having silicon oxide on a silicon substrate. Piezoelectric devices comprising the doped-AlN film are also disclosed.

公开(公告)号：US20210143319A1

公开(公告)日：2021-05-13

申请号：US16691569

申请日：2019-11-21

申请人： Applied Materials, Inc.

发明人： Abhijeet Laxman Sangle ,  Vijay Bhan Sharma ,  Ankur Kadam ,  Bharatwaj Ramakrishnan ,  Visweswaren Sivaramakrishnan ,  Yuan Xue

IPC分类号： H01L41/319 ,  H01L41/047 ,  H01L41/08 ,  H01L41/187 ,  H01L41/316 ,  C23C14/06 ,  C23C14/54 ,  C23C14/35

摘要： A method of fabricating a piezoelectric layer includes depositing a piezoelectric material onto a substrate in a first crystallographic phase by physical vapor deposition while the substrate remains at a temperature below 400° C., and thermally annealing the substrate at a temperature above 500° C. to convert the piezoelectric material to a second crystallographic phase. The physical vapor deposition includes sputtering from a target in a plasma deposition chamber.