公开(公告)号：US20180163317A1

公开(公告)日：2018-06-14

申请号：US15835067

申请日：2017-12-07

Applicant: Applied Materials, Inc.

Inventor： Balaji GANAPATHY ,  Ankur KADAM ,  Prerna S. GORADIA ,  Laksheswar KALITA ,  Tapash CHAKRABORTY ,  Vijay Bhan SHARMA

IPC: C25D5/44 ,  C25D3/44 ,  C25D5/18 ,  C25D7/00

CPC classification number: C25D5/44 ,  C25D3/44 ,  C25D5/022 ,  C25D5/18 ,  C25D5/48 ,  C25D5/50 ,  C25D7/00 ,  C25D9/08 ,  C25D11/04

Abstract: In one implementation, a method of depositing a material on a substrate is provided. The method comprises positioning an aluminum-containing substrate in an electroplating solution, the electroplating solution comprising a non-aqueous solvent and a deposition precursor. The method further comprises depositing a coating on the aluminum-containing substrate, the coating comprising aluminum or aluminum oxide. Depositing the coating comprises applying a first current for a first time-period to nucleate a surface of the aluminum-containing substrate and applying a second current for a second time-period, wherein the first current is greater than the second current and the first time-period is less than the second time-period to form the coating on the nucleated surface of the aluminum-containing substrate.

公开(公告)号：US20180033643A1

公开(公告)日：2018-02-01

申请号：US15552207

申请日：2016-02-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Vijay Bhan SHARMA ,  Ranga Rao ARNEPALLI ,  Prerna GORADIA ,  Robert Jan VISSER

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/683 ,  H01L21/02 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L21/32135 ,  H01L21/02244 ,  H01L21/306 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/6838

Abstract: Improved methods and apparatus for removing a metal nitride selectively with respect to exposed or underlying dielectric or metal layers are provided herein. In some embodiments, a method of etching a metal nitride layer atop a substrate, includes: (a) oxidizing a metal nitride layer to form a metal oxynitride layer (MN1-xOx) at a surface of the metal nitride layer, wherein M is one of titanium or tantalum and x is an integer from 0.05 to 0.95; and (b) exposing the metal oxynitride layer (MN1-xOx) to a process gas, wherein the metal oxynitride layer (MN1-xOx) reacts with the process gas to form a volatile compound which desorbs from the surface of the metal nitride layer.

公开(公告)号：US20220213590A1

公开(公告)日：2022-07-07

申请号：US17194956

申请日：2021-03-08

Applicant: Applied Materials, Inc.

Inventor： Uday PAI ,  Yuan XUE ,  Abhijeet Laxman SANGLE ,  Vijay Bhan SHARMA ,  Suresh Chand SETH ,  Bharatwaj Ramakrishnan ,  Soundarrajan JEMBULINGAM ,  Naveen CHANNARAYAPATNA PUTTANNA ,  Ankur KADAM ,  Yi YANG

IPC: C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  H01J37/34

Abstract: Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber includes a shield comprising an inner wall with an innermost diameter configured to surround a target when disposed in the physical vapor deposition chamber, wherein a ratio of a surface area of the shield to a planar area of the inner diameter is about 3 to about 10.

公开(公告)号：US20240016060A1

公开(公告)日：2024-01-11

申请号：US18218409

申请日：2023-07-05

Applicant: Applied Materials, Inc.

Inventor： Vijay Bhan SHARMA ,  Nilesh PATIL ,  Bharatwaj RAMAKRISHNAN ,  Suresh Chand SETH ,  Abhijeet Laxman SANGLE

IPC: H10N30/076 ,  H10N30/853 ,  H10N30/06

CPC classification number: H10N30/076 ,  H10N30/8554 ,  H10N30/06

Abstract: Examples disclosed herein relate to piezoelectric devices and methods of patterning piezoelectric layers for piezoelectric device fabrication. In certain embodiments, a piezoelectric layer disposed over a bottom electrode layer on a substrate is selectively etched via a laser etching process to expose portions of the bottom electrode layer. The laser etching process of the piezoelectric layer facilitates improvement of throughput and reduces hazardous byproduct production during fabrication of piezoelectric devices.

公开(公告)号：US20230320223A1

公开(公告)日：2023-10-05

申请号：US18022652

申请日：2020-08-24

Applicant: Applied Materials, Inc.

Inventor： Abhijeet Laxman SANGLE ,  Vijay Bhan SHARMA ,  Yuan XUE ,  Ankur KADAM ,  Bharatwaj RAMAKRISHNAN ,  Uday PAI ,  Nilesh PATIL

IPC: H10N30/50 ,  H10N30/093 ,  H10N30/00 ,  H10N30/853 ,  H10N30/87

CPC classification number: H10N30/50 ,  H10N30/093 ,  H10N30/1051 ,  H10N30/8554 ,  H10N30/877

Abstract: Disclosed are methods and apparatus for depositing uniform layers on a substrate (201) for piezoelectric applications. An ultra-thin seed layer (308) having a uniform thickness from center to edge thereof is deposited on a substrate (201). A template layer (310) closely matching the crystal structure of a subsequently formed piezoelectric material layer (312) is deposited on a substrate (201). The uniform thickness and orientation of the seed layer (308) and the template layer (310), in turn, facilitate the growth of piezoelectric materials with improved crystallinity and piezoelectric properties.