公开(公告)号：US20220246787A1

公开(公告)日：2022-08-04

申请号：US17162909

申请日：2021-01-29

Applicant: Applied Materials, Inc.

Inventor： Abhijeet Laxman SANGLE

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  G06N10/00

Abstract: A quantum device includes a substrate including a first material and including an upper surface thereof, a first layer comprising a compound of the first material disposed on the upper surface of the substrate, a second layer, comprising a metal oxide, disposed on the first layer, a third layer, comprising a noble metal, disposed on the second layer, a fourth layer, comprising a metal oxide, disposed on the third layer, a fifth layer, comprising a piezoelectric material, disposed on the fourth layer, a sixth layer, comprising a noble metal, disposed on the fifth layer, a seventh layer, comprising a material capable of quantum emission, disposed on the sixth layer, and an eighth layer, comprising a noble metal, disposed on the seventh layer, and at least one of the eighth layer and the seventh layer are sized to enable quantum emission from the seventh layer.

公开(公告)号：US20220213590A1

公开(公告)日：2022-07-07

申请号：US17194956

申请日：2021-03-08

Applicant: Applied Materials, Inc.

Inventor： Uday PAI ,  Yuan XUE ,  Abhijeet Laxman SANGLE ,  Vijay Bhan SHARMA ,  Suresh Chand SETH ,  Bharatwaj Ramakrishnan ,  Soundarrajan JEMBULINGAM ,  Naveen CHANNARAYAPATNA PUTTANNA ,  Ankur KADAM ,  Yi YANG

IPC: C23C14/34 ,  C23C14/35 ,  C23C14/50 ,  H01J37/34

Abstract: Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber includes a shield comprising an inner wall with an innermost diameter configured to surround a target when disposed in the physical vapor deposition chamber, wherein a ratio of a surface area of the shield to a planar area of the inner diameter is about 3 to about 10.

公开(公告)号：US20240016060A1

公开(公告)日：2024-01-11

申请号：US18218409

申请日：2023-07-05

Applicant: Applied Materials, Inc.

Inventor： Vijay Bhan SHARMA ,  Nilesh PATIL ,  Bharatwaj RAMAKRISHNAN ,  Suresh Chand SETH ,  Abhijeet Laxman SANGLE

IPC: H10N30/076 ,  H10N30/853 ,  H10N30/06

CPC classification number: H10N30/076 ,  H10N30/8554 ,  H10N30/06

Abstract: Examples disclosed herein relate to piezoelectric devices and methods of patterning piezoelectric layers for piezoelectric device fabrication. In certain embodiments, a piezoelectric layer disposed over a bottom electrode layer on a substrate is selectively etched via a laser etching process to expose portions of the bottom electrode layer. The laser etching process of the piezoelectric layer facilitates improvement of throughput and reduces hazardous byproduct production during fabrication of piezoelectric devices.

公开(公告)号：US20230320223A1

公开(公告)日：2023-10-05

申请号：US18022652

申请日：2020-08-24

Applicant: Applied Materials, Inc.

Inventor： Abhijeet Laxman SANGLE ,  Vijay Bhan SHARMA ,  Yuan XUE ,  Ankur KADAM ,  Bharatwaj RAMAKRISHNAN ,  Uday PAI ,  Nilesh PATIL

IPC: H10N30/50 ,  H10N30/093 ,  H10N30/00 ,  H10N30/853 ,  H10N30/87

CPC classification number: H10N30/50 ,  H10N30/093 ,  H10N30/1051 ,  H10N30/8554 ,  H10N30/877

Abstract: Disclosed are methods and apparatus for depositing uniform layers on a substrate (201) for piezoelectric applications. An ultra-thin seed layer (308) having a uniform thickness from center to edge thereof is deposited on a substrate (201). A template layer (310) closely matching the crystal structure of a subsequently formed piezoelectric material layer (312) is deposited on a substrate (201). The uniform thickness and orientation of the seed layer (308) and the template layer (310), in turn, facilitate the growth of piezoelectric materials with improved crystallinity and piezoelectric properties.