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    Process for coating glass
    1.
    发明申请
    Process for coating glass 失效
    玻璃涂层工艺

    公开(公告)号：US20040028911A1

    公开(公告)日：2004-02-12

    申请号：US10362313

    申请日：2003-02-20

    发明人： Simon James Hurst ,  Kevin David Sanderson ,  Timothy Ian McKittrick ,  David Rimmer

    IPC分类号： B32B017/06 ,  C23C016/40

    CPC分类号： C03C17/3417 ,  C03C17/2453 ,  C03C17/2456 ,  C03C2217/211 ,  C03C2217/212 ,  C03C2217/23 ,  C03C2217/71 ,  C03C2217/91 ,  C03C2218/15

    摘要： A process for the production of durable photocatalytically active self-cleaning coating on glass by contacting a hot glass surface with a fluid mixture of titanium chloride, a source of oxygen and a tin precursor. The coating preferably comprises less than 10 atom % tin in the bulk of the coating and preferably there is a greater atomic percent tin in the surface of the coating than there is in the bulk of the coating. Preferably, the coating is durable to abrasion and humidity cycling.

    摘要翻译： 通过使热玻璃表面与氯化钛，氧源和锡前体的流体混合物接触来在玻璃上生产耐久的光催化活性自清洁涂层的方法。 该涂层优选包含在涂层主体中小于10原子％的锡，并且优选地，涂层表面中的原子百分比比在涂层主体中更大。 优选地，涂层耐磨损和湿度循环。

    Effluent pressure control for use in a processing system
    7.
    发明申请
    Effluent pressure control for use in a processing system 审中-公开
    用于处理系统的废水压力控制

    公开(公告)号：US20040247787A1

    公开(公告)日：2004-12-09

    申请号：US10803528

    申请日：2004-03-17

    发明人： Neil M. Mackie ,  Martin L. Zucker ,  Steven C. Selbrede

    IPC分类号： C23C016/00 ,  C23C016/40 ,  C23C016/06

    CPC分类号： C23C16/40 ,  C23C16/405 ,  C23C16/4411 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/45565 ,  C23C16/466

    摘要： At least one wafer is exposed to a treatment environment in a treatment chamber at a treatment pressure. The backside of the wafer is exposed to a heat transfer gas for thermally coupling the wafer to the support arrangement. Control of the heat transfer gas provides a fixed flow to the support arrangement enabling thermal coupling with the support arrangement. A first portion of the heat transfer gas leaks between the support arrangement and the wafer. Responsive to a backside pressure signal, a second portion of the fixed flow is released in a way which maintains the backside pressure at a selected value. In one feature, effluent flow control is used for controllably releasing the second portion of heat transfer gas. In another feature, the second portion of heat transfer gas is released into the treatment chamber. Dilution control and multi-wafer configurations are described.

    摘要翻译： 至少一个晶片在处理压力下暴露于处理室中的处理环境。 将晶片的背面暴露于用于将晶片热耦合到支撑装置的传热气体。 传热气体的控制为支撑装置提供固定的流动，使得能够与支撑装置进行热耦合。 传热气体的第一部分在支撑装置和晶片之间泄漏。 响应于背侧压力信号，固定流的第二部分以将背侧压力保持在选定值的方式被释放。 在一个特征中，流出物流控制用于可控地释放第二部分传热气体。 在另一特征中，传热气体的第二部分被释放到处理室中。 描述了稀释控制和多晶圆配置。

    Methods of forming fluorine doped insulating materials
    8.
    发明申请
    Methods of forming fluorine doped insulating materials 失效
    形成氟掺杂绝缘材料的方法

    公开(公告)号：US20040185183A1

    公开(公告)日：2004-09-23

    申请号：US10769430

    申请日：2004-01-30

    发明人： Anand Srinivasan ,  Gurtej Sandhu ,  Ravi Iyer

    IPC分类号： C23C016/40

    CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02271 ,  H01L21/31629

    摘要： In one aspect, the invention includes a method of forming an insulating material comprising: a) providing a substrate within a reaction chamber; b) providing reactants comprising a Si, F and ozone within the reaction chamber; and c) depositing an insulating material comprising fluorine, silicon and oxygen onto the substrate from the reactants. In another aspect, the invention includes a method of forming a boron-doped silicon oxide having Si-F bonds, comprising: a) providing a substrate within a reaction chamber; b) providing reactants comprising Triethoxy fluorosilane, a boron-containing precursor, and ozone within the reaction chamber; and c) depositing a boron-doped silicon oxide having SinullF bonds onto the substrate from the reactants. In yet another aspect, the invention includes a method of forming a phosphorus-doped silicon oxide having SinullF bonds, comprising: a) providing a substrate within a reaction chamber; b) providing reactants comprising triethoxy fluorosilane, a phosphorus-containing precursor, and ozone within the reaction chamber; and c) depositing a phosphorus-doped silicon oxide having SinullF bonds onto the substrate from the reactants.

    摘要翻译： 一方面，本发明包括一种形成绝缘材料的方法，包括：a）在反应室内提供衬底; b）在反应室内提供包含Si，F和臭氧的反应物; 以及c）从所述反应物沉积包含氟，硅和氧的绝缘材料到所述衬底上。 另一方面，本发明包括形成具有Si-F键的掺硼氧化硅的方法，包括：a）在反应室内提供衬底; b）在反应室内提供包含三乙氧基氟硅烷，含硼前体和臭氧的反应物; 以及c）从所述反应物沉积具有Si-F键的掺硼氧化硅到所述衬底上。 另一方面，本发明包括形成具有Si-F键的磷掺杂氧化硅的方法，包括：a）在反应室内提供衬底; b）在反应室内提供包含三乙氧基氟硅烷，含磷前体和臭氧的反应物; 以及c）从所述反应物沉积具有Si-F键的磷掺杂的氧化硅到所述衬底上。

    Antireflection film made of a CVD SiO2 film containing a fluoro and/or alkyl modifier
    9.
    发明申请
    Antireflection film made of a CVD SiO2 film containing a fluoro and/or alkyl modifier 有权
    由含有氟和/或烷基改性剂的CVD SiO 2膜制成的防反射膜

    公开(公告)号：US20040157061A1

    公开(公告)日：2004-08-12

    申请号：US10470580

    申请日：2003-04-09

    申请人： Dai Nippon Printing Co., Ltd.

    发明人： Koji Ichimura

    IPC分类号： B32B009/00 ,  C23C016/40

    CPC分类号： G02B1/111 ,  C23C16/401 ,  Y10T428/31663 ,  Y10T428/31667

    摘要： A low refractive index SiO2 film is provided which uses a starting material for forming an SiO2 film and has a lower refractive index than the conventional SiO2 film. A starting material gas comprising a gas containing a fluorine atom, a gas containing a silicon atom and an alkyl group having 1 to 4 carbon atoms or an alkyl group having 1 to 4 carbon atoms with a part or the whole of hydrogen atoms substituted by a fluorine atom, and a gas containing an oxygen atom is subjected to plasma CVD in a vacuum chamber 1 to form an SiO2 film on a web 2 in a plasma zone 5. The SiO2 film thus formed has, introduced thereinto, at least one low refractive index element selected from a fluorine atom, an alkyl group having 1 to 4 carbon atoms, and an alkyl group having 1 to 4 carbon atoms with a part or the whole of hydrogen atoms substituted by a fluorine atom, and the SiO2 film with the low refractive index element introduced thereinto has a lower refractive index than an SiO2 film with the low refractive index element not introduced thereinto.

    摘要翻译： 提供了一种低折射率SiO 2膜，其使用用于形成SiO 2膜的起始材料并且具有比常规SiO 2膜更低的折射率。 包含含有氟原子的气体的原料气体，含有硅原子的碳原子数为1〜4的烷基或碳原子数为1〜4的烷基，一部分或全部氢原子被 氟原子和含有氧原子的气体在真空室1中进行等离子体CVD，以在等离子体区域5中的幅材2上形成SiO 2膜。由此形成的SiO 2膜具有至少一个低折射率 选自氟原子，具有1〜4个碳原子的烷基和具有1〜4个碳原子的烷基，部分或全部氢原子被氟原子取代的元素，SiO 2膜的含量低 导入其中的折射率元素具有比不引入低折射率元素的SiO 2膜更低的折射率。

    Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
    10.
    发明申请
    Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants 有权
    孔原子，孔隙前体和使用它们的方法提供具有低介电常数的多孔有机硅玻璃膜

    公开(公告)号：US20030232137A1

    公开(公告)日：2003-12-18

    申请号：US10409468

    申请日：2003-04-07

    发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

    IPC分类号： C23C016/40 ,  B32B009/00

    CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02343 ,  H01L21/02351 ,  H01L21/31695 ,  Y10T428/31504

    摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where vnullwnullxnullynullznull100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.

    摘要翻译： 多孔有机硅玻璃（OSG）膜由式SivOwCxHyFz表示的材料的单相组成，其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜 65原子％，x为5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。 该薄膜通过化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其可以与前体无关或与之结合。 随后除去致孔剂以提供多孔膜。 用于形成膜的组合物，例如试剂盒包括致孔剂和前体。 致孔前体也可用于提供薄膜。