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    SYSTEMS AND METHODS FOR IMPROVING WITHIN DIE CO-PLANARITY UNIFORMITY
    1.
    发明申请
    SYSTEMS AND METHODS FOR IMPROVING WITHIN DIE CO-PLANARITY UNIFORMITY 审中-公开

    公开(公告)号：US20200098628A1

    公开(公告)日：2020-03-26

    申请号：US16572920

    申请日：2019-09-17

    Applicant: Applied Materials, Inc.

    Inventor： Paul McHugh ,  Kwan Wook Roh ,  Gregory J. Wilson

    IPC: H01L21/768 ,  G06F17/50 ,  H01L21/288

    Abstract: Exemplary methods of producing a semiconductor substrate may include characterizing a substrate pattern to identify a zonal distribution of a plurality of vias and a height and a radius of each via of the plurality of vias. The methods may include determining a fill rate for each via within the zonal distribution of the plurality of vias. The methods may include modifying a die pattern to adjust via fill rates between two zones of vias. The methods may also include producing a substrate according to the die pattern.

    Substrate rinsing systems and methods
    2.
    发明授权
    Substrate rinsing systems and methods 有权

    公开(公告)号：US09859135B2

    公开(公告)日：2018-01-02

    申请号：US14626903

    申请日：2015-02-19

    Applicant: Applied Materials, Inc.

    Inventor： Jonathan S. Frankel ,  Brian J. Brown ,  Vincent S. Francischetti ,  Paul McHugh ,  Kyle M. Hanson ,  Ekaterina Mikhaylichenko

    IPC: B05B1/04 ,  H01L21/67 ,  H01L21/02

    CPC classification number: H01L21/67051 ,  B05B1/046 ,  H01L21/02052 ,  H01L21/67057

    Abstract: An example waterfall apparatus includes (1) a first portion of a first width having (a) a first plenum, a second plenum, and a restricted fluid path therebetween; (b) a first coupling surface; and (c) an inlet opening that creates a fluid path between the first coupling surface and the first plenum; and (2) a second portion of a second width larger than the first width and having (a) a second coupling surface; and (b) an inlet aligned with the first portion inlet opening. The first and second coupling surfaces form a slot that extends along at least a portion of a length of the waterfall apparatus and that connects to the second plenum. Fluid introduced into the second portion inlet fills the first plenum, travels through the restricted fluid path to the second plenum, and exits the slot between the first and second portions to form a rinsing fluid waterfall.

    Drying high aspect ratio features
    6.
    发明授权
    Drying high aspect ratio features 有权

    公开(公告)号：US10546762B2

    公开(公告)日：2020-01-28

    申请号：US15814252

    申请日：2017-11-15

    Applicant: Applied Materials, Inc.

    Inventor： Eric J. Bergman ,  John L. Klocke ,  Paul McHugh ,  Stuart Crane ,  Richard W. Plavidal

    IPC: H01L21/67 ,  C11D7/26 ,  H01L21/02 ,  B08B3/04

    Abstract: Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.

    DRYING HIGH ASPECT RATIO FEATURES
    8.
    发明申请
    DRYING HIGH ASPECT RATIO FEATURES 审中-公开

    公开(公告)号：US20180144954A1

    公开(公告)日：2018-05-24

    申请号：US15814252

    申请日：2017-11-15

    Applicant: Applied Materials, Inc.

    Inventor： Eric J. Bergman ,  John L. Klocke ,  Paul McHugh ,  Stuart Crane ,  Richard W. Plavidal

    IPC: H01L21/67 ,  C11D7/26 ,  H01L21/02

    Abstract: Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.

    ELECTROPLATING DYNAMIC EDGE CONTROL
    10.
    发明申请
    ELECTROPLATING DYNAMIC EDGE CONTROL 审中-公开

    公开(公告)号：US20190177869A1

    公开(公告)日：2019-06-13

    申请号：US15838009

    申请日：2017-12-11

    Applicant: Applied Materials, Inc.

    Inventor： Paul McHugh ,  Gregory J. Wilson ,  Daniel Woodruff ,  Marvin Bernt

    IPC: C25D17/00 ,  C25D7/12 ,  C25D17/12 ,  C25D21/12 ,  C25D5/04 ,  C25D17/06 ,  H01L21/288 ,  H01L21/687

    Abstract: Embodiments of the present technology may include an electroplating system. The electroplating system may include a vessel. The system may also include a wafer holder configured for holding a wafer in the vessel. The system may further include an anode in the vessel. In addition, the method may include a plurality of thief electrodes. For each thief electrode of the plurality of thief electrodes, a thief current channel may be defined by a channel wall. The channel wall for each thief electrode may define an aperture adjacent to the wafer holder. The thief current channel may extend from each thief electrode to the aperture. The system may include a current control system in electrical communication with the plurality of thief electrodes. The current control system may be configured such that an amount of current delivered to each thief electrode can be adjusted independently.

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