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1.发明授权公开(公告)号：US07888290B2
公开(公告)日：2011-02-15
申请号：US11530973
申请日：2006-09-12
IPC分类号： H01L39/24
CPC分类号： H01L39/125 , C01G55/00 , C01P2002/54 , C01P2004/03 , C01P2006/40 , C01P2006/42 , H01L39/249 , Y10T29/49014
摘要： The invention herein is directed towards a material exhibiting superconductivity characteristics which includes a laser processed region of a metal oxide crystal. The material has a transition temperature greater than a transition temperature of the metal oxide crystal, preferably greater than 140K. The transition temperature of the material may be considered greater than the transition temperature of the metal oxide crystal if the material has a transition temperature and the metal oxide crystal has no transition temperature. The present invention is also directed to a material which includes a laser processed strontium ruthenate crystal wherein the material has a greater oxygen content than the starting strontium ruthenate crystal. The present invention is also directed towards a method for manufacturing a material exhibiting superconductivity characteristics that includes providing a metal oxide crystal and laser ablating the metal oxide crystal and a material made by this process.
摘要翻译： 本发明涉及显示超导特性的材料，其包括金属氧化物晶体的激光加工区域。 该材料具有大于金属氧化物晶体的转变温度的转变温度，优选大于140K。 如果材料具有转变温度并且金属氧化物晶体没有转变温度，则材料的转变温度可以被认为大于金属氧化物晶体的转变温度。 本发明还涉及一种材料，其包括激光加工的钌酸锶晶体，其中该材料的氧含量比起始钌酸锶晶体大。 本发明还涉及一种用于制造显示超导特性的材料的方法，其包括提供金属氧化物晶体和激光烧蚀金属氧化物晶体以及通过该工艺制造的材料。
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公开(公告)号：US20110028329A1
公开(公告)日：2011-02-03
申请号：US12710751
申请日：2010-02-23
CPC分类号： H01L39/125 , C01G55/00 , C01P2002/54 , C01P2004/03 , C01P2006/40 , C01P2006/42 , H01L39/249 , Y10T29/49014
摘要： The invention herein is directed towards a method of making material exhibiting superconductivity characteristics which includes a laser processed region of a metal oxide crystal. The material has a transition temperature greater than a transition temperature of the metal oxide crystal, preferably greater than 140K. The transition temperature of the material may be considered greater than the transition temperature of the metal oxide crystal if the material has a transition temperature and the metal oxide crystal has no transition temperature. The present invention is also directed to a material which includes a laser processed strontium ruthenate crystal wherein the material has a greater oxygen content than the starting strontium ruthenate crystal. The present invention is also directed towards a method for manufacturing a material exhibiting superconductivity characteristics that includes providing a metal oxide crystal and laser ablating the metal oxide crystal and a material made by this process.
摘要翻译： 本发明涉及一种制造显示超导特性的材料的方法，其包括金属氧化物晶体的激光处理区域。 该材料具有大于金属氧化物晶体的转变温度的转变温度，优选大于140K。 如果材料具有转变温度并且金属氧化物晶体没有转变温度，则材料的转变温度可以被认为大于金属氧化物晶体的转变温度。 本发明还涉及一种材料，其包括激光加工的钌酸锶晶体，其中该材料的氧含量比起始钌酸锶晶体大。 本发明还涉及一种用于制造显示超导特性的材料的方法，其包括提供金属氧化物晶体和激光烧蚀金属氧化物晶体以及通过该工艺制造的材料。
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3.发明申请公开(公告)号：US20100248967A1
公开(公告)日：2010-09-30
申请号：US11530973
申请日：2006-09-12
CPC分类号： H01L39/125 , C01G55/00 , C01P2002/54 , C01P2004/03 , C01P2006/40 , C01P2006/42 , H01L39/249 , Y10T29/49014
摘要： The invention herein is directed towards a material exhibiting superconductivity characteristics which includes a laser processed region of a metal oxide crystal. The material has a transition temperature greater than a transition temperature of the metal oxide crystal, preferably greater than 140K. The transition temperature of the material may be considered greater than the transition temperature of the metal oxide crystal if the material has a transition temperature and the metal oxide crystal has no transition temperature. The present invention is also directed to a material which includes a laser processed strontium ruthenate crystal wherein the material has a greater oxygen content than the starting strontium ruthenate crystal. The present invention is also directed towards a method for manufacturing a material exhibiting superconductivity characteristics that includes providing a metal oxide crystal and laser ablating the metal oxide crystal and a material made by this process.
摘要翻译： 本发明涉及显示超导特性的材料，其包括金属氧化物晶体的激光加工区域。 该材料具有大于金属氧化物晶体的转变温度的转变温度，优选大于140K。 如果材料具有转变温度并且金属氧化物晶体没有转变温度，则材料的转变温度可以被认为大于金属氧化物晶体的转变温度。 本发明还涉及一种材料，其包括激光加工的钌酸锶晶体，其中该材料的氧含量比起始钌酸锶晶体大。 本发明还涉及一种用于制造显示超导特性的材料的方法，其包括提供金属氧化物晶体和激光烧蚀金属氧化物晶体以及通过该工艺制造的材料。
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公开(公告)号：US07884051B1
公开(公告)日：2011-02-08
申请号：US12710751
申请日：2010-02-23
IPC分类号： H01L39/24
CPC分类号： H01L39/125 , C01G55/00 , C01P2002/54 , C01P2004/03 , C01P2006/40 , C01P2006/42 , H01L39/249 , Y10T29/49014
摘要： The invention herein is directed towards a method of making material exhibiting superconductivity characteristics which includes a laser processed region of a metal oxide crystal. The material has a transition temperature greater than a transition temperature of the metal oxide crystal, preferably greater than 140K. The transition temperature of the material may be considered greater than the transition temperature of the metal oxide crystal if the material has a transition temperature and the metal oxide crystal has no transition temperature. The present invention is also directed to a material which includes a laser processed strontium ruthenate crystal wherein the material has a greater oxygen content than the starting strontium ruthenate crystal. The present invention is also directed towards a method for manufacturing a material exhibiting superconductivity characteristics that includes providing a metal oxide crystal and laser ablating the metal oxide crystal and a material made by this process.
摘要翻译： 本发明涉及一种制造显示超导特性的材料的方法，其包括金属氧化物晶体的激光处理区域。 该材料具有大于金属氧化物晶体的转变温度的转变温度，优选大于140K。 如果材料具有转变温度并且金属氧化物晶体没有转变温度，则材料的转变温度可以被认为大于金属氧化物晶体的转变温度。 本发明还涉及一种材料，其包括激光加工的钌酸锶晶体，其中该材料的氧含量比起始钌酸锶晶体大。 本发明还涉及一种用于制造显示超导特性的材料的方法，其包括提供金属氧化物晶体和激光烧蚀金属氧化物晶体以及通过该工艺制造的材料。
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公开(公告)号：US06710343B2
公开(公告)日：2004-03-23
申请号：US09813858
申请日：2001-03-22
IPC分类号： G01J500
CPC分类号： G01J5/12 , G01J1/429 , H01L31/101
摘要： A fast photon detector with high energy and position resolution, which may be used in the infrared, ultraviolet, EUV, and X-ray ranges includes an absorber, a thermoelectric sensor, a heat sink, all disposed on a dielectric substrate. An absorber receives a photon and transforms the energy of the photon into a change in temperature within the absorber. A thermoelectric sensor is thermally coupled to the absorber. When the absorber receives the photon, the energy of the photon is very quickly transformed into a time dependent temperature difference across the sensor. A heat sink is thermally coupled to the sensor, to maintain the heat flow across the sensor. The absorber, sensor, and heat sink are disposed upon a dielectric substrate, such that the heat transfer from the sensor to the dielectric substrate is much slower than the signal duration.
摘要翻译： 可用于红外，紫外，EUV和X射线范围的具有高能量和位置分辨率的快速光子检测器包括全部设置在电介质基底上的吸收体，热电传感器，散热器。 吸收器接收光子并将光子的能量转换成吸收器内的温度变化。 热电传感器热耦合到吸收器。 当吸收器接收到光子时，光子的能量非常迅速地变换成跨传感器的时间依赖的温度差。 散热器热耦合到传感器，以保持热量流过传感器。 吸收器，传感器和散热器设置在电介质基板上，使得从传感器到电介质基板的热传递比信号持续时间慢得多。
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6.发明授权Method for producing substoichiometric silicon nitride of preselected proportions 失效用于生产预选比例的亚化学计量氮化硅的方法
公开(公告)号：US5015353A
公开(公告)日：1991-05-14
申请号：US102937
申请日：1987-09-30
CPC分类号： C23C14/0652 , C23C14/22 , C23C14/548
摘要： An apparatus and method for producing films of silicon nitride whose index of refraction varies continuously with film depth by preselected amounts between n=3.9 and n=1.99. This is done by producing an amorphous film of silicon nitride, Si.sub.1-x N.sub.x, of pre-selected stoichiometry between x=0 and x=0.57. In a vacuum-chamber, a target substrate is exposed to vaporized silicon while being simultaneously bombarded with an ion beam of relatively high kinetic energy, ionized, nitrogen particles. The nitrogen embeds in the silicon film deposited on the substrate to form amorphous silicon nitride, the stoichiometry of which depends on the intensity of the ion beam. Instruments measure during the deposition the relative rate of arrival at the target for silicon and nitrogen, and, with pre-generated calibration data for the apparatus, enable an operator to selectively control the film's stoichiometry by controlling the ion beam's intensity response to the measured rate of silicon deposition.
摘要翻译： 一种用于制造氮化硅膜的装置和方法，其折射率以n = 3.9和n = 1.99之间的预选量以膜深度连续变化。 这通过在x = 0和x = 0.57之间产生预先选择的化学计量的氮化硅非晶膜Si1-xNx来实现。 在真空室中，目标衬底暴露于汽化硅，同时用相对较高的动能，电离的氮颗粒的离子束轰击。 氮沉积在沉积在衬底上的硅膜中以形成非晶氮化硅，其化学计量取决于离子束的强度。 仪器在沉积期间测量硅和氮的目标的相对速度，并且利用该装置的预先生成的校准数据使得操作者能够通过控制离子束对所测量的速率的强度响应来选择性地控制膜的化学计量 的硅沉积。
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公开(公告)号：US07280623B2
公开(公告)日：2007-10-09
申请号：US10210882
申请日：2002-08-02
CPC分类号： H04B1/001 , H04B1/0003 , H04B1/406 , H04B1/707 , H04B1/713
摘要： Digital RF correlation based signal processing arrangements allow for the development of software—controlled radio reception without the need for down-conversion to IF frequencies. Various arrangements are implemented using superconducting RSFQ logic enabling the clock and processing speeds required.
摘要翻译： 基于数字RF相关的信号处理装置允许开发软件控制的无线电接收，而不需要下变频到IF频率。 使用超导RSFQ逻辑实现各种布置，从而实现所需的时钟和处理速度。
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