摘要:
Hydrophobic treatment composition comprising one or more compounds, as a mixture, corresponding to the formula in which at least one R is a CaF2a+1 group, a being an integer, it being possible for another R to be an SiX3-bRCb1 group, b being 0, 1 or 2X being a hydrolysable group, such as alkoxy, hydroxyl or halo R1 being a hydrocarbon group, such as lower alkyl S is a hydrogen atom, an OH group, an alkyl group, in particular a lower alkyl group, such as CH3, or an OSiR2R3R4 group, R2, R3 and R4 being identical or different and consisting in particular of one of the abovementioned groups carried by an Si atom, such as (CH2)2—R, a hydrogen atom, an alkyl group or OSIR2R3R4, n is an integer≧1, the total number of Si atoms not exceeding 20. Process for treatment by this composition.Hydrophobic glass substrate thus obtained and its application, in particular as glazing.
摘要翻译:疏水性处理组合物,其包含一种或多种化合物,作为混合物,其中至少一个R为CaF 2 a + 1基团,a为整数,另外R为SiX 3-bRC b 1基团的式 0或1或2个X为可水解基团,例如烷氧基,羟基或卤素R 1为烃基,例如低级烷基S为氢原子,OH基团,烷基,特别是低级烷基, 例如CH 3或OSiR 2 R 3 R 4基团,R 2,R 3和R 4相同或不同,特别由上述基团之一由Si原子例如(CH 2)2 -R,氢原子,烷基 或OSIR2R3R4,n为整数> = 1,Si原子总数不超过20.用该组合物处理的方法。 这样得到的疏水玻璃基板及其应用,特别是玻璃。
摘要:
Hydrophobic treatment composition comprising one or more compounds, as a mixture, corresponding to the formula in which at least one R is a CaF2a+1 group, a being an integer, it being possible for another R to be an SiX3-bRC1b group, b being 0, 1 or 2 X being a hydrolysable group, such as alkoxy, hydroxyl or halo R1 being a hydrocarbon group, such as lower alkyl S is a hydrogen atom, an OH group, an alkyl group, in particular a lower alkyl group, such as CH3, or an OSiR2R3R4 group, R2, R3 and R4 being identical or different and consisting in particular of one of the abovementioned groups carried by an Si atom, such as (CH2)2—R, a hydrogen atom, an alkyl group or OSIR2R3R4, n is an integer≧1, the total number of Si atoms not exceeding 20. Process for treatment by this composition. Hydrophobic glass substrate thus obtained and its application, in particular as glazing.
摘要翻译:疏水性处理组合物,其包含一种或多种化合物,作为其中至少一个R为CaF 2 a + 1基团的化合物的混合物,a为整数,另外R可为SiX 3-bRC 1 b基团,b 0或1或2个X为可水解基团,例如烷氧基,羟基或卤素R 1为烃基,例如低级烷基S为氢原子,OH基团,烷基,特别是低级烷基, 例如CH 3或OSiR 2 R 3 R 4基团,R 2,R 3和R 4相同或不同,特别由上述基团之一由Si原子例如(CH 2)2 -R,氢原子,烷基 或OSIR2R3R4,n为1以上的整数,Si原子数不超过20个。 这样得到的疏水玻璃基板及其应用,特别是玻璃。
摘要:
A colloidal material and a process for manufacturing it and uses of the colloidal material for manufacturing optic devices. The colloidal material is of formula AnXm, wherein A is an element selected from groups II, III or IV of the periodic table; X is a metal selected from groups V or VI; and in the selection of the pair (A, X), the groups of the periodic table of A and X, respectively, are selected from the following combinations: (group II, group VI), (group III, group V) or (group IV, group VI); and n and m are such that AnXm is a neutral compound. The colloidal compound may be CdS, InP, or PbS. The process includes a step of solution phase decomposition of a mixture of X and a carboxylate of formula A(R—COO)p in the presence of a non- or weakly-coordinating solvent, and injecting an acetate salt or acetic acid in the mixture; wherein p is an integer between 1 and 2; R is a linear or branched C1-30alkyl group.
摘要:
The present invention relates to a process for manufacturing a colloidal material, to colloidal materials obtainable by this process and to uses of said colloidal material for the manufacture of optic devices. The colloidal material obtainable by the process of the present invention is of formula AnXm, wherein A is an element selected from groups II, III or IV of the periodic table, wherein X is a metal selected from groups V or VI of the periodic table, and wherein, in the selection of the pair (A, X), the groups of the periodic table of A and X, respectively, are selected from the following combinations: (group II, group VI), (group III, group V) or (group IV, group VI); and wherein n and m are such that AnXm is a neutral compound. For example, the colloidal compound obtainable by the process of the present invention may be CdS, In P, or PbS. Other examples are provided below. The process of the present invention comprises a step of solution phase decomposition of a mixture of X and a carboxylate of formula A(R—COO)p in the presence of a non- or weakly-coordinating solvent, and a step of injecting an acetate salt or acetic acid in the mixture; wherein p is an integer between 1 and 2; R is a linear or branched C1-30alkyl group. The colloidal material of the present invention may be used for example for the manufacture of a laser or an optoelectronic device.
摘要:
A process for manufacturing colloidal nanosheet, by lateral growth, on an initial colloidal nanocrystal, of a crystalline semiconductor material represented by the formula MnXy, where M is a transition metal and X a chalcogen. The process includes the following steps: The preparation of a first organic solution, non or barely coordinating used as a synthesis solvent and including at least one initial colloidal nanocrystal; The preparation of a second organic solution including precursors of M and X, and including an acetate salt. And the slow introduction over a predetermined time scale of a predetermined amount of the second solution in a predetermined amount of the first solution, at a predetermined temperature for the growth of nanosheets. The use of the obtained material is also presented.