公开(公告)号：US20080143981A1

公开(公告)日：2008-06-19

申请号：US11854621

申请日：2007-09-13

申请人： Dirk Heinrich EHM ,  Annemieke van de Runstraat ,  Bastiaan Theodoor Wolschrijn ,  Arnoldus Jan Storm ,  Thomas Stein ,  Marco G. H. Meijerink ,  A. G. Ton M. Bastein ,  Esther L. J. van Soest-Vercammen ,  Norbertus Benedictus Koster ,  Frits G. H. M. Gubbels ,  Peter J. Oprel ,  Michiel Nienoord ,  Michel Riepen ,  Johannes Hubertus Josephina Moors

发明人： Dirk Heinrich EHM ,  Annemieke van de Runstraat ,  Bastiaan Theodoor Wolschrijn ,  Arnoldus Jan Storm ,  Thomas Stein ,  Marco G. H. Meijerink ,  A. G. Ton M. Bastein ,  Esther L. J. van Soest-Vercammen ,  Norbertus Benedictus Koster ,  Frits G. H. M. Gubbels ,  Peter J. Oprel ,  Michiel Nienoord ,  Michel Riepen ,  Johannes Hubertus Josephina Moors

IPC分类号： G03B27/52 ,  G21K5/00

CPC分类号： G03F7/70958 ,  B82Y10/00 ,  G03F7/70316 ,  G03F7/70891 ,  G03F7/70925 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/067

摘要： An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30° C. or more, preferably of approximately 100° C. or more, particularly preferably of approximately 150° C. or more, and even more preferably of approximately 250° C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.

摘要翻译： 一种用于EUV光刻的光学装置，特别是投影系统，照明系统或光束整形系统，包括布置在光学装置的光束路径中并且反射软X射线或EUV中的辐射的至少一个光学元件 波长范围，其中至少在所述光学装置的操作期间，所述光束路径中至少在所述光学表面处的所述反射光学元件中的至少一个优选地各自具有大约30℃或更高的工作温度， 优选为约100℃以上，特别优选为约150℃以上，甚至更优选为约250℃以上，并且其中选择所述至少一个反射型光学元件的光学设计 其光学特性被优化以在操作温度下操作。 还提出了一种用于提供具有这种光学设计的反射光学元件的方法。

公开(公告)号：US07959310B2

公开(公告)日：2011-06-14

申请号：US11854621

申请日：2007-09-13

申请人： Dirk Heinrich Ehm ,  Annemieke Van De Runstraat ,  Bastiaan Theodoor Wolschrijn ,  Arnoldus Jan Storm ,  Thomas Stein ,  Marco G. H. Meijerink ,  A. G. Ton M. Bastein ,  Esther L. J. Van Soest-Vercammen ,  Norbertus Benedictus Koster ,  Frits G. H. M. Gubbels ,  Peter J. Oprel ,  Michiel Nienoord ,  Michel Riepen ,  Johannes Hubertus Josephina Moors

发明人： Dirk Heinrich Ehm ,  Annemieke Van De Runstraat ,  Bastiaan Theodoor Wolschrijn ,  Arnoldus Jan Storm ,  Thomas Stein ,  Marco G. H. Meijerink ,  A. G. Ton M. Bastein ,  Esther L. J. Van Soest-Vercammen ,  Norbertus Benedictus Koster ,  Frits G. H. M. Gubbels ,  Peter J. Oprel ,  Michiel Nienoord ,  Michel Riepen ,  Johannes Hubertus Josephina Moors

IPC分类号： G02B5/08 ,  G02B7/182 ,  G06K7/10

CPC分类号： G03F7/70958 ,  B82Y10/00 ,  G03F7/70316 ,  G03F7/70891 ,  G03F7/70925 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/067

摘要： An optical arrangement, in particular a projection system, illumination system or beam shaping system for EUV lithography, including at least one optical element that is arranged in a beam path of the optical arrangement and that reflects radiation in the soft X-ray- or EUV wavelength range, wherein at least during operation of the optical arrangement at least one of, preferably each of, the reflective optical elements in the beam path, at least at the optical surface, has an operating temperature of approximately 30° C. or more, preferably of approximately 100° C. or more, particularly preferably of approximately 150° C. or more, and even more preferably of approximately 250° C. or more, and wherein the optical design of the at least one reflective optical element is selected such that its optical characteristics are optimised for operation at the operating temperature. Also presented is a method for providing a reflective optical element with such an optical design.

摘要翻译： 一种用于EUV光刻的光学装置，特别是投影系统，照明系统或光束整形系统，包括布置在光学装置的光束路径中并且反射软X射线或EUV中的辐射的至少一个光学元件 波长范围，其中至少在所述光学装置的操作期间，所述光束路径中至少在所述光学表面处的所述反射光学元件中的至少一个优选地各自具有大约30℃或更高的工作温度， 优选为约100℃以上，特别优选为约150℃以上，甚至更优选为约250℃以上，并且其中选择所述至少一个反射型光学元件的光学设计 其光学特性被优化以在操作温度下操作。 还提出了一种用于提供具有这种光学设计的反射光学元件的方法。

公开(公告)号：US20080151201A1

公开(公告)日：2008-06-26

申请号：US11643776

申请日：2006-12-22

申请人： Arnoldus Jan Storm ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Dirk Heinrich Ehm

发明人： Arnoldus Jan Storm ,  Johannes Hubertus Josephina Moors ,  Bastiaan Theodoor Wolschrijn ,  Dirk Heinrich Ehm

IPC分类号： G03B27/52

CPC分类号： G03F7/70925 ,  G03F7/70058 ,  G03F7/70916

摘要： A lithographic apparatus that includes an illumination system configured to condition a radiation beam. The illumination system includes a plurality of optical components. The apparatus also includes a support constructed to support a patterning device. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The apparatus further includes a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. The projection system includes a plurality of optical components. The apparatus also includes a contamination measurement unit for measuring contamination of a surface of at least one of the optical components. The contamination measurement unit is provided with a radiation sensor constructed and arranged to measure an optical characteristic of radiation received from the surface.

摘要翻译： 一种光刻设备，包括配置成调节辐射束的照明系统。 照明系统包括多个光学部件。 该装置还包括构造成支撑图案形成装置的支撑件。 图案形成装置能够在其横截面中赋予辐射束图案以形成图案化的辐射束。 该装置还包括被构造成保持基板的基板台，以及配置成将图案化的辐射束投影到基板的目标部分上的投影系统。 投影系统包括多个光学部件。 该装置还包括用于测量至少一个光学部件的表面的污染物的污染测量单元。 污染测量单元设置有辐射传感器，其被构造和布置成测量从表面接收的辐射的光学特性。

公开(公告)号：US20110188011A1

公开(公告)日：2011-08-04

申请号：US12973844

申请日：2010-12-20

申请人： Dirk Heinrich EHM ,  Arnoldus Jan Storm ,  Johannes Hubertus Josephina Moors ,  Almut Czap ,  Mona Nagel ,  Jacques Cor Johan van der Donck ,  Jetske Karina Stortelder ,  Marijn Sandtke ,  Maria Isabel Catalina Caballero ,  Luigi Scaccabarozzi

发明人： Dirk Heinrich EHM ,  Arnoldus Jan Storm ,  Johannes Hubertus Josephina Moors ,  Almut Czap ,  Mona Nagel ,  Jacques Cor Johan van der Donck ,  Jetske Karina Stortelder ,  Marijn Sandtke ,  Maria Isabel Catalina Caballero ,  Luigi Scaccabarozzi

IPC分类号： G03F7/20 ,  G03B27/52 ,  B08B5/04

CPC分类号： G03F7/70925 ,  B82Y10/00 ,  G03F7/7085 ,  G03F7/70916 ,  G03F7/70975 ,  G03F7/70983 ,  G21K1/062

摘要： An optical assembly is mounted in a projection exposure apparatus (101) for EUV microlithography and includes at least one vacuum chamber (70, 71, 68a), at least one optical element (6, 7; 65, 66; 63) arranged in the vacuum chamber (70, 71, 68a), the optical element (6, 7; 65, 66; 63) having an optical surface (18) arranged to be impinged upon by a useful beam bundle (3) of the projection exposure apparatus (101), and a cleaning device (72) configured to clean the optical surface (18). The cleaning device (72) is configured to perform particle cleaning of the optical surface (18) at a gas pressure within the vacuum chamber (70,71, 68a) which is higher than a vacuum pressure (po) for performing an exposure operation with the projection exposure apparatus (101). As a result, optical elements having respective optical surfaces arranged to be impinged upon by a useful beam bundle can be cleaned reliably of foreign particles.

摘要翻译： 光学组件安装在用于EUV微光刻的投影曝光设备（101）中，并且包括至少一个真空室（70,71,68a），至少一个光学元件（6,7; 65,66,63） 所述光学元件（6,7; 65,66,63）具有光学表面（18），所述光学表面被布置成被所述投影曝光设备的有用束束（3）撞击 101）和被构造成清洁光学表面（18）的清洁装置（72）。 清洁装置（72）构造成在真空室（70,71,68a）内的气体压力下进行光学表面（18）的粒子清洁，该气体压力高于用于进行曝光操作的真空压力（po） 投影曝光装置（101）。 结果，可以可靠地清洁具有布置成被有用的束束撞击的各个光学表面的光学元件的外来颗粒。

公开(公告)号：US08477285B2

公开(公告)日：2013-07-02

申请号：US12973844

申请日：2010-12-20

申请人： Dirk Heinrich Ehm ,  Arnoldus Jan Storm ,  Johannes Hubertus Josephina Moors ,  Almut Czap ,  Mona Nagel ,  Jacques Cor Johan van der Donck ,  Jetske Karina Stortelder ,  Marijn Sandtke ,  Maria Isabel Catalina Caballero ,  Luigi Scaccabarozzi

发明人： Dirk Heinrich Ehm ,  Arnoldus Jan Storm ,  Johannes Hubertus Josephina Moors ,  Almut Czap ,  Mona Nagel ,  Jacques Cor Johan van der Donck ,  Jetske Karina Stortelder ,  Marijn Sandtke ,  Maria Isabel Catalina Caballero ,  Luigi Scaccabarozzi

IPC分类号： G03B27/52 ,  G03B27/42

CPC分类号： G03F7/70925 ,  B82Y10/00 ,  G03F7/7085 ,  G03F7/70916 ,  G03F7/70975 ,  G03F7/70983 ,  G21K1/062

摘要： An optical assembly is mounted in a projection exposure apparatus (101) for EUV microlithography and includes at least one vacuum chamber (70, 71, 68a), at least one optical element (6, 7; 65, 66; 63) arranged in the vacuum chamber (70, 71, 68a), the optical element (6, 7; 65, 66; 63) having an optical surface (18) arranged to be impinged upon by a useful beam bundle (3) of the projection exposure apparatus (101), and a cleaning device (72) configured to clean the optical surface (18). The cleaning device (72) is configured to perform particle cleaning of the optical surface (18) at a gas pressure within the vacuum chamber (70,71, 68a) which is higher than a vacuum pressure (po) for performing an exposure operation with the projection exposure apparatus (101). As a result, optical elements having respective optical surfaces arranged to be impinged upon by a useful beam bundle can be cleaned reliably of foreign particles.

摘要翻译： 光学组件安装在用于EUV微光刻的投影曝光设备（101）中，并且包括至少一个真空室（70,71,68a），至少一个光学元件（6,7; 65,66,63） 所述光学元件（6,7; 65,66,63）具有光学表面（18），所述光学表面被布置成被所述投影曝光设备的有用束束（3）撞击 101）和被构造成清洁光学表面（18）的清洁装置（72）。 清洁装置（72）构造成在真空室（70,71,68a）内的气体压力下进行光学表面（18）的粒子清洁，该气体压力高于用于进行曝光操作的真空压力（po） 投影曝光装置（101）。 结果，可以可靠地清洁具有布置成被有用的束束撞击的各个光学表面的光学元件的外来颗粒。

公开(公告)号：US20120006258A1

公开(公告)日：2012-01-12

申请号：US13156960

申请日：2011-06-09

申请人： Gerard Frans Jozef Schasfoort ,  Jeroen Marcel Huijbregtse ,  Roeland Nicolaas Maria Vanneer ,  Arnoldus Jan Storm ,  Edwin Te Sligte ,  Antonius Theodorus Wilhelmus Kempen ,  Wouter Andries Jonker ,  Timo Huijser

发明人： Gerard Frans Jozef Schasfoort ,  Jeroen Marcel Huijbregtse ,  Roeland Nicolaas Maria Vanneer ,  Arnoldus Jan Storm ,  Edwin Te Sligte ,  Antonius Theodorus Wilhelmus Kempen ,  Wouter Andries Jonker ,  Timo Huijser

IPC分类号： B05C11/00 ,  B08B7/00

CPC分类号： G03F7/70925

摘要： A method of reducing contamination generated by a hydrogen radical generator and deposited on an optical element of a lithographic apparatus includes passing molecular hydrogen over a first part of a metal filament of the hydrogen radical generator, the first part including a metal-oxide, when the temperature of the first part of the metal filament is at a reduction temperature less than or equal to an evaporation temperature of the metal-oxide.

摘要翻译： 减少由氢自由基发生剂产生并沉积在光刻设备的光学元件上的污染物的方法包括使分子氢通过氢自由基发生器的金属丝的第一部分，第一部分包括金属氧化物，当第 金属丝的第一部分的温度处于小于或等于金属氧化物的蒸发温度的还原温度。