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公开(公告)号：US20090017635A1
公开(公告)日：2009-01-15
申请号：US12171708
申请日：2008-07-11
申请人： Ashish Shah , Ganesh Balasubramanian , Dale R. Du Bois , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
发明人： Ashish Shah , Ganesh Balasubramanian , Dale R. Du Bois , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
IPC分类号： H01L21/302 , C23F1/00
CPC分类号： H01L21/68 , Y10S414/136
摘要： The present invention comprises an apparatus and method for etching at a substrate edge region. In one embodiment, the apparatus comprises a chamber having a process volume, a substrate support arranged inside the process volume and having a substrate support surface, a plasma generator coupled to the chamber and configured to supply an etching agent in a plasma phase to a peripheral region of the substrate support surface, and a gas delivery assembly coupled to a gas source for generating a radial gas flow over the substrate support surface from an approximately central region of the substrate support surface toward the peripheral region of the substrate support surface.
摘要翻译： 本发明包括用于在衬底边缘区域刻蚀的设备和方法。 在一个实施例中，该装置包括具有处理体积的腔室，布置在处理体积内的衬底支撑件并且具有衬底支撑表面，等离子体发生器，耦合到腔室并且被配置为将等离子体相中的蚀刻剂供应到外围 基板支撑表面的区域以及耦合到气体源的气体输送组件，用于从衬底支撑表面的大致中心区域朝向衬底支撑表面的周边区域产生在衬底支撑表面上的径向气流。
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2.发明申请SYSTEMS FOR PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION AND BEVEL EDGE ETCHING 审中-公开等离子体增强化学气相沉积和水平蚀刻系统公开(公告)号：US20120211164A1
公开(公告)日：2012-08-23
申请号：US13456080
申请日：2012-04-25
申请人： Ashish Shah , Dale R. DuBois , Ganesh Balasubramanian , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
发明人： Ashish Shah , Dale R. DuBois , Ganesh Balasubramanian , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
IPC分类号： H01L21/3065 , C23C16/458 , C23C16/50 , H01L21/306
CPC分类号： H01L21/6719 , H01J37/32366 , H01J2237/3321 , H01L21/67201 , H01L21/67207
摘要： Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.
摘要翻译： 本文所述的实施例涉及集成衬底边缘处理能力的衬底处理系统。 处理系统的说明性示例包括但不限于工厂接口，负载锁定室，传送室和具有两个或更多个处理区域的一个或多个双处理室，其可彼此隔离并且共享公共气体供应和 普通排气泵。 每个双处理室中的处理区域包括单独的气体分配组件和RF功率源，以在每个处理区域的衬底表面上的选择性区域提供等离子体。 因此，每个双处理室被配置为允许在处理区域中的至少两个基板上同时执行多个隔离过程。
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3.发明授权公开(公告)号：US08197636B2
公开(公告)日：2012-06-12
申请号：US12106881
申请日：2008-04-21
申请人： Ashish Shah , Dale R. DuBois , Ganesh Balasubramanian , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
发明人： Ashish Shah , Dale R. DuBois , Ganesh Balasubramanian , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
IPC分类号： C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H01L21/6719 , H01J37/32366 , H01J2237/3321 , H01L21/67201 , H01L21/67207
摘要： Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.
摘要翻译： 本文所述的实施例涉及集成衬底边缘处理能力的衬底处理系统。 处理系统的说明性示例包括但不限于工厂接口，负载锁定室，传送室和具有两个或更多个处理区域的一个或多个双处理室，其可彼此隔离并且共享公共气体供应和 普通排气泵。 每个双处理室中的处理区域包括单独的气体分配组件和RF功率源，以在每个处理区域的衬底表面上的选择性区域提供等离子体。 因此，每个双处理室被配置为允许在处理区域中的至少两个基板上同时执行多个隔离过程。
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4.发明申请公开(公告)号：US20090014127A1
公开(公告)日：2009-01-15
申请号：US12106881
申请日：2008-04-21
申请人： Ashish Shah , Dale R. DuBois , Ganesh Balasubramanian , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
发明人： Ashish Shah , Dale R. DuBois , Ganesh Balasubramanian , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
IPC分类号： C23F1/02
CPC分类号： H01L21/6719 , H01J37/32366 , H01J2237/3321 , H01L21/67201 , H01L21/67207
摘要： Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.
摘要翻译： 本文所述的实施例涉及集成衬底边缘处理能力的衬底处理系统。 处理系统的说明性示例包括但不限于工厂接口，负载锁定室，传送室和具有两个或更多个处理区域的一个或多个双处理室，其可彼此隔离并且共享公共气体供应和 普通排气泵。 每个双处理室中的处理区域包括单独的气体分配组件和RF功率源，以在每个处理区域的衬底表面上的选择性区域提供等离子体。 因此，每个双处理室被配置为允许在处理区域中的至少两个基板上同时执行多个隔离过程。
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公开(公告)号：US09337072B2
公开(公告)日：2016-05-10
申请号：US12950105
申请日：2010-11-19
申请人： Ganesh Balasubramanian , Amit Bansal , Eller Y. Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
发明人： Ganesh Balasubramanian , Amit Bansal , Eller Y. Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
IPC分类号： H02N13/00 , H01L21/683 , C23C16/52 , H01J37/32 , H01L21/67
CPC分类号： H01L21/6831 , C23C16/52 , H01J37/32431 , H01L21/67069 , H01L21/67253
摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
摘要翻译： 本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。 本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到 静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。
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公开(公告)号：US20080084650A1
公开(公告)日：2008-04-10
申请号：US11866646
申请日：2007-10-03
申请人： Ganesh Balasubramanian , Amit Bansal , Eller Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Seamons , Visweswaren Sivaramakrishnan , Bok Kim , Amir Al-Bayati , Derek Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
发明人： Ganesh Balasubramanian , Amit Bansal , Eller Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Seamons , Visweswaren Sivaramakrishnan , Bok Kim , Amir Al-Bayati , Derek Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , C23C16/52 , H01J37/32431 , H01L21/67069 , H01L21/67253
摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
摘要翻译： 本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。 本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到 静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。
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公开(公告)号：US20110090613A1
公开(公告)日：2011-04-21
申请号：US12950105
申请日：2010-11-19
申请人： Ganesh Balasubramanian , Amit Bansal , Eller Y. Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
发明人： Ganesh Balasubramanian , Amit Bansal , Eller Y. Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
IPC分类号： H01L21/683 , H01L21/66 , G01R27/02
CPC分类号： H01L21/6831 , C23C16/52 , H01J37/32431 , H01L21/67069 , H01L21/67253
摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
摘要翻译： 本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。 本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到 静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的虚拟阻抗。
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公开(公告)号：US07922440B2
公开(公告)日：2011-04-12
申请号：US12171594
申请日：2008-07-11
CPC分类号： H01L21/68 , Y10S414/136
摘要： The present invention comprises an apparatus and method for centering a substrate in a process chamber. In one embodiment, the apparatus comprises a substrate support having a support surface adapted to receive the placement of a substrate and a reference axis substantially perpendicular to the support surface, and a plurality of centering members extending above the support surface. Each centering member is biased into a first position and is movable to a second position by interacting with an opposing member. A movement between the first position and the second position thereby causes each centering member to releasably engage with a peripheral edge of the substrate to push the substrate in a direction toward the reference axis.
摘要翻译： 本发明包括用于使处理室中的衬底居中的装置和方法。 在一个实施例中，该装置包括具有适于接收基板的放置和基本上垂直于支撑表面的参考轴的支撑表面的基板支撑件，以及在支撑表面上方延伸的多个定心构件。 每个定心构件被偏压到第一位置，并且通过与相对构件相互作用而可移动到第二位置。 第一位置和第二位置之间的运动使得每个定心构件可释放地与基板的周缘接合，以沿着基准轴线的方向推动基板。
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公开(公告)号：US20090017228A1
公开(公告)日：2009-01-15
申请号：US12171594
申请日：2008-07-11
IPC分类号： B01J19/08 , C23C16/54 , C23C16/458
CPC分类号： H01L21/68 , Y10S414/136
摘要： The present invention comprises an apparatus and method for centering a substrate in a process chamber. In one embodiment, the apparatus comprises a substrate support having a support surface adapted to receive the placement of a substrate and a reference axis substantially perpendicular to the support surface, and a plurality of centering members extending above the support surface. Each centering member is biased into a first position and is movable to a second position by interacting with an opposing member. A movement between the first position and the second position thereby causes each centering member to releasably engage with a peripheral edge of the substrate to push the substrate in a direction toward the reference axis.
摘要翻译： 本发明包括用于使处理室中的衬底居中的装置和方法。 在一个实施例中，该装置包括具有适于接收基板的放置和基本上垂直于支撑表面的参考轴的支撑表面的基板支撑件，以及在支撑表面上方延伸的多个定心构件。 每个定心构件被偏压到第一位置，并且通过与相对构件相互作用而可移动到第二位置。 第一位置和第二位置之间的运动使得每个定心构件可释放地与基板的周缘接合，以沿着基准轴线的方向推动基板。
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10.发明申请公开(公告)号：US20090044753A1
公开(公告)日：2009-02-19
申请号：US12255638
申请日：2008-10-21
申请人： Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
发明人： Deenesh Padhi , Chiu Chan , Sudha Rathi , Ganesh Balasubramanian , Jianhua Zhou , Karthik Janakiraman , Martin J. Seamons , Visweswaren Sivaramakrishnan , Derek R. Witty , Hichem M'Saad
IPC分类号： H01L21/30
CPC分类号： C23C16/45565 , C23C16/0254 , C23C16/26 , C23C16/4404
摘要： An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.
摘要翻译： 提供了具有用于半导体应用的保护涂层的制品及其制造方法。 在某些实施例中，提供了在半导体处理室中使用的制品的铝表面的涂覆方法。 该方法包括提供处理室; 将物品放入处理室; 将包含碳源的第一气体流入所述处理室; 将包含氮源的第二气体流入所述处理室; 在室内形成等离子体; 以及在铝表面上沉积涂层材料。 在某些实施方案中，涂层材料包含无定形含碳氮层。 在某些实施例中，制品包括构造成将气体输送到处理室的喷头。
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