公开(公告)号：US20080084650A1

公开(公告)日：2008-04-10

申请号：US11866646

申请日：2007-10-03

申请人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Kim ,  Amir Al-Bayati ,  Derek Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

发明人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Kim ,  Amir Al-Bayati ,  Derek Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

IPC分类号： H01L21/683

CPC分类号： H01L21/6831 ,  C23C16/52 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/67253

摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

摘要翻译： 本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。 本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到 静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。

公开(公告)号：US20110090613A1

公开(公告)日：2011-04-21

申请号：US12950105

申请日：2010-11-19

申请人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

发明人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

IPC分类号： H01L21/683 ,  H01L21/66 ,  G01R27/02

CPC分类号： H01L21/6831 ,  C23C16/52 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/67253

摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

摘要翻译： 本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。 本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到 静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的虚拟阻抗。

公开(公告)号：US09337072B2

公开(公告)日：2016-05-10

申请号：US12950105

申请日：2010-11-19

申请人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

发明人： Ganesh Balasubramanian ,  Amit Bansal ,  Eller Y. Juco ,  Mohamad Ayoub ,  Hyung-Joon Kim ,  Karthik Janakiraman ,  Sudha Rathi ,  Deenesh Padhi ,  Martin Jay Seamons ,  Visweswaren Sivaramakrishnan ,  Bok Hoen Kim ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad ,  Anton Baryshnikov ,  Chiu Chan ,  Shuang Liu

IPC分类号： H02N13/00 ,  H01L21/683 ,  C23C16/52 ,  H01J37/32 ,  H01L21/67

CPC分类号： H01L21/6831 ,  C23C16/52 ,  H01J37/32431 ,  H01L21/67069 ,  H01L21/67253

摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

摘要翻译： 本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。 本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到 静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。

公开(公告)号：US08197636B2

公开(公告)日：2012-06-12

申请号：US12106881

申请日：2008-04-21

申请人： Ashish Shah ,  Dale R. DuBois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

发明人： Ashish Shah ,  Dale R. DuBois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01L21/6719 ,  H01J37/32366 ,  H01J2237/3321 ,  H01L21/67201 ,  H01L21/67207

摘要： Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.

摘要翻译： 本文所述的实施例涉及集成衬底边缘处理能力的衬底处理系统。 处理系统的说明性示例包括但不限于工厂接口，负载锁定室，传送室和具有两个或更多个处理区域的一个或多个双处理室，其可彼此隔离并且共享公共气体供应和 普通排气泵。 每个双处理室中的处理区域包括单独的气体分配组件和RF功率源，以在每个处理区域的衬底表面上的选择性区域提供等离子体。 因此，每个双处理室被配置为允许在处理区域中的至少两个基板上同时执行多个隔离过程。

公开(公告)号：US20120211164A1

公开(公告)日：2012-08-23

申请号：US13456080

申请日：2012-04-25

申请人： Ashish Shah ,  Dale R. DuBois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

发明人： Ashish Shah ,  Dale R. DuBois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

IPC分类号： H01L21/3065 ,  C23C16/458 ,  C23C16/50 ,  H01L21/306

CPC分类号： H01L21/6719 ,  H01J37/32366 ,  H01J2237/3321 ,  H01L21/67201 ,  H01L21/67207

摘要： Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.

摘要翻译： 本文所述的实施例涉及集成衬底边缘处理能力的衬底处理系统。 处理系统的说明性示例包括但不限于工厂接口，负载锁定室，传送室和具有两个或更多个处理区域的一个或多个双处理室，其可彼此隔离并且共享公共气体供应和 普通排气泵。 每个双处理室中的处理区域包括单独的气体分配组件和RF功率源，以在每个处理区域的衬底表面上的选择性区域提供等离子体。 因此，每个双处理室被配置为允许在处理区域中的至少两个基板上同时执行多个隔离过程。

公开(公告)号：US20090017635A1

公开(公告)日：2009-01-15

申请号：US12171708

申请日：2008-07-11

申请人： Ashish Shah ,  Ganesh Balasubramanian ,  Dale R. Du Bois ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

发明人： Ashish Shah ,  Ganesh Balasubramanian ,  Dale R. Du Bois ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

IPC分类号： H01L21/302 ,  C23F1/00

CPC分类号： H01L21/68 ,  Y10S414/136

摘要： The present invention comprises an apparatus and method for etching at a substrate edge region. In one embodiment, the apparatus comprises a chamber having a process volume, a substrate support arranged inside the process volume and having a substrate support surface, a plasma generator coupled to the chamber and configured to supply an etching agent in a plasma phase to a peripheral region of the substrate support surface, and a gas delivery assembly coupled to a gas source for generating a radial gas flow over the substrate support surface from an approximately central region of the substrate support surface toward the peripheral region of the substrate support surface.

摘要翻译： 本发明包括用于在衬底边缘区域刻蚀的设备和方法。 在一个实施例中，该装置包括具有处理体积的腔室，布置在处理体积内的衬底支撑件并且具有衬底支撑表面，等离子体发生器，耦合到腔室并且被配置为将等离子体相中的蚀刻剂供应到外围 基板支撑表面的区域以及耦合到气体源的气体输送组件，用于从衬底支撑表面的大致中心区域朝向衬底支撑表面的周边区域产生在衬底支撑表面上的径向气流。

公开(公告)号：US20090014127A1

公开(公告)日：2009-01-15

申请号：US12106881

申请日：2008-04-21

申请人： Ashish Shah ,  Dale R. DuBois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

发明人： Ashish Shah ,  Dale R. DuBois ,  Ganesh Balasubramanian ,  Mark A. Fodor ,  Eui Kyoon Kim ,  Chiu Chan ,  Karthik Janakiraman ,  Thomas Nowak ,  Joseph C. Werner ,  Visweswaren Sivaramakrishnan ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Jianhua Zhou

IPC分类号： C23F1/02

CPC分类号： H01L21/6719 ,  H01J37/32366 ,  H01J2237/3321 ,  H01L21/67201 ,  H01L21/67207

摘要： Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.

摘要翻译： 本文所述的实施例涉及集成衬底边缘处理能力的衬底处理系统。 处理系统的说明性示例包括但不限于工厂接口，负载锁定室，传送室和具有两个或更多个处理区域的一个或多个双处理室，其可彼此隔离并且共享公共气体供应和 普通排气泵。 每个双处理室中的处理区域包括单独的气体分配组件和RF功率源，以在每个处理区域的衬底表面上的选择性区域提供等离子体。 因此，每个双处理室被配置为允许在处理区域中的至少两个基板上同时执行多个隔离过程。

公开(公告)号：US20090093128A1

公开(公告)日：2009-04-09

申请号：US11868859

申请日：2007-10-08

申请人： MARTIN JAY SEAMONS ,  Yoganand N. Saripalli ,  Kwangduk Douglas Lee ,  Bok Hoen Kim ,  Visweswaren Sivaramakrishnan ,  Wendy H. Yeh ,  Josephine Ju-Hwei Chang Liu ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad

发明人： MARTIN JAY SEAMONS ,  Yoganand N. Saripalli ,  Kwangduk Douglas Lee ,  Bok Hoen Kim ,  Visweswaren Sivaramakrishnan ,  Wendy H. Yeh ,  Josephine Ju-Hwei Chang Liu ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H01L21/47

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/3146 ,  H01L21/76829

摘要： Methods for high temperature deposition an amorphous carbon film with improved step coverage are provided. In one embodiment, a method for of depositing an amorphous carbon film includes providing a substrate in a process chamber, heating the substrate at a temperature greater than 500 degrees Celsius, supplying a gas mixture comprising a hydrocarbon compound and an inert gas into the process chamber containing the heated substrate, and depositing an amorphous carbon film on the heated substrate having a stress of between 100 mega-pascal (MPa) tensile and about 100 mega-pascal (MPa) compressive.

摘要翻译： 提供了高温沉积方法，提供了具有改进的台阶覆盖率的无定形碳膜。 在一个实施方案中，沉积非晶碳膜的方法包括在处理室中提供衬底，在大于500摄氏度的温度下加热衬底，将包含烃化合物和惰性气体的气体混合物供应到处理室 包含加热的基底，以及在具有100兆帕（拉伸）拉伸和约100兆帕斯卡（MPa）压应力之间的应力的加热基底上沉积无定形碳膜。

公开(公告)号：US20080254233A1

公开(公告)日：2008-10-16

申请号：US11733531

申请日：2007-04-10

申请人： KWANGDUK DOUGLAS LEE ,  Matthew Spuller ,  Martin Jay Seamons ,  Wendy H. Yeh ,  Bok Hoen Kim ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad

发明人： KWANGDUK DOUGLAS LEE ,  Matthew Spuller ,  Martin Jay Seamons ,  Wendy H. Yeh ,  Bok Hoen Kim ,  Mohamad Ayoub ,  Amir Al-Bayati ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： C23C14/28

CPC分类号： C23C16/26 ,  C23C16/52

摘要： Methods of depositing amorphous carbon films on substrates are provided herein. The methods reduce or prevent plasma-induced charge damage to the substrates from the deposition of the amorphous carbon films. In one aspect, an initiation layer of amorphous carbon is deposited at a low RF power level and/or at a low hydrocarbon compound/inert gas flow rate ratio before a bulk layer of amorphous carbon is deposited. After the deposition of the initiation layer, the RF power, hydrocarbon flow rate, and inert gas flow rate may be ramped to final values for the deposition of the bulk layer, wherein the RF power ramp rate is typically greater than the ramp rates of the hydrocarbon compound and of the inert gas. In another aspect, a method of minimizing plasma-induced charge damage includes depositing a seasoning layer on one or more interior surfaces of a chamber before the deposition of the amorphous carbon film on a substrate therein or coating the interior surfaces with an oxide or dielectric layer during manufacturing.

摘要翻译： 本文提供了在基片上沉积非晶碳膜的方法。 该方法从无定形碳膜的沉积中减少或防止等离子体对基板的电荷损伤。 在一个方面，在堆积无定形碳沉积层之前，以低RF功率水平和/或低烃化合物/惰性气体流速比沉积无定形碳的起始层。 在起始层的沉积之后，RF功率，烃流速和惰性气体流速可以斜坡化到用于沉积体层的最终值，其中RF功率斜坡率通常大于 烃化合物和惰性气体。 在另一方面，一种使等离子体感应的电荷损伤最小化的方法包括在将非晶碳膜沉积在基底上之前，在腔室的一个或多个内表面上沉积调味层，或者用氧化物或介电层涂覆内表面 在制造过程中。

公开(公告)号：US08445075B2

公开(公告)日：2013-05-21

申请号：US12975833

申请日：2010-12-22

申请人： Huiwen Xu ,  Mei-Yee Shek ,  Li-Qun Xia ,  Amir Al-Bayati ,  Derek Witty ,  Hichem M'Saad

发明人： Huiwen Xu ,  Mei-Yee Shek ,  Li-Qun Xia ,  Amir Al-Bayati ,  Derek Witty ,  Hichem M'Saad

IPC分类号： B05D3/10

CPC分类号： C23C16/308 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

摘要： Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed from the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and/or nitrogen on the film. The thin layer provides a carbon-rich, hydrophobic surface for the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors for layers that are subsequently deposited on the low dielectric constant film.

摘要翻译： 提供了在基板上处理膜的方法。 在一个方面，所述方法包括在通过在膜上沉积包含硅，碳和任选的氧和/或氮的薄层来从膜去除光致抗蚀剂之后处理图案化的低介电常数膜。 薄层为图案化的低介电常数膜提供了富含碳的疏水性表面。 薄层还保护低介电常数膜免于随后的湿法清洗工艺和前体渗透，随后沉积在低介电常数膜上。