公开(公告)号：US07770448B2

公开(公告)日：2010-08-10

申请号：US11458565

申请日：2006-07-19

申请人： Ashutosh Misra ,  Benjamin J. Jurcik, Jr. ,  Ravi Laxman

发明人： Ashutosh Misra ,  Benjamin J. Jurcik, Jr. ,  Ravi Laxman

IPC分类号： G01F23/20 ,  G01G19/00

CPC分类号： G01G23/3728 ,  G01G17/04

摘要： A chemical storage device and a method for monitoring chemical usage are described herein. The device and disclosed method utilize a chemical storage canister and a load cell integrated into one transportable unit. The load cell is capable of compensating for the added weight of attached dispensing devices used in the semiconductor industry. Additionally, the load cell continuously displays the weight of the chemicals as they are withdrawn from the chemical storage device. These functionalities are included in the control logic of the load cell which is incorporated into the load cell itself.

摘要翻译： 本文描述了一种用于监测化学品用途的化学储存装置和方法。 该装置和公开的方法利用集成到一个可运输单元中的化学储存罐和负载单元。 称重传感器能够补偿在半导体工业中使用的附加分配装置的附加重量。 此外，当从化学品存储装置中取出化学品时，称重传感器连续地显示化学品的重量。 这些功能包括在负载传感器本身中的负载传感器的控制逻辑中。

公开(公告)号：US20070131252A1

公开(公告)日：2007-06-14

申请号：US11456259

申请日：2006-07-10

申请人： Ravi Laxman ,  Ashutosh Misra

发明人： Ravi Laxman ,  Ashutosh Misra

IPC分类号： B08B9/00 ,  B08B9/027 ,  B08B3/00

CPC分类号： C23G5/02 ,  C11D7/5009 ,  C11D11/0041 ,  C11D11/0047 ,  C23C16/4402 ,  C23C16/4407 ,  Y10S134/902

摘要： Compositions and methods for cleaning deposition systems utilizing alkylsilanes are described herein. In an embodiment, a method of cleaning a semiconductor fabrication system comprises flushing the system with a solvent comprising at least one alkylsilane. In another embodiment, a method of removing at least one chemical precursor from a semiconductor fabrication system comprises forcing a solvent containing at least one alkylsilane through the semiconductor fabrication system and dissolving the at least one chemical precursor in the solvent. The solvent may also contain mixtures of different alkylsilanes and other organic solvents.

摘要翻译： 用于清洁使用烷基硅烷的沉积系统的组合物和方法在本文中描述。 在一个实施例中，清洁半导体制造系统的方法包括用包含至少一种烷基硅烷的溶剂冲洗该系统。 在另一个实施方案中，从半导体制造系统中去除至少一种化学前体的方法包括通过半导体制造系统强制含有至少一种烷基硅烷的溶剂并将至少一种化学前体溶解在溶剂中。 溶剂也可以含有不同烷基硅烷和其它有机溶剂的混合物。

公开(公告)号：US07293569B2

公开(公告)日：2007-11-13

申请号：US11456259

申请日：2006-07-10

申请人： Ravi Laxman ,  Ashutosh Misra ,  Jean-Marc Girard

发明人： Ravi Laxman ,  Ashutosh Misra ,  Jean-Marc Girard

IPC分类号： B08B9/00

CPC分类号： C23G5/02 ,  C11D7/5009 ,  C11D11/0041 ,  C11D11/0047 ,  C23C16/4402 ,  C23C16/4407 ,  Y10S134/902

摘要： Compositions and methods for cleaning deposition systems utilizing alkylsilanes are described herein. In an embodiment, a method of cleaning a semiconductor fabrication system comprises flushing the system with a solvent comprising at least one alkylsilane. In another embodiment, a method of removing at least one chemical precursor from a semiconductor fabrication system comprises forcing a solvent containing at least one alkylsilane through the semiconductor fabrication system and dissolving the at least one chemical precursor in the solvent. The solvent may also contain mixtures of different alkylsilanes and other organic solvents.

摘要翻译： 用于清洁使用烷基硅烷的沉积系统的组合物和方法在本文中描述。 在一个实施例中，清洁半导体制造系统的方法包括用包含至少一种烷基硅烷的溶剂冲洗该系统。 在另一个实施方案中，从半导体制造系统中去除至少一种化学前体的方法包括通过半导体制造系统强制含有至少一种烷基硅烷的溶剂并将至少一种化学前体溶解在溶剂中。 溶剂也可以含有不同烷基硅烷和其它有机溶剂的混合物。

公开(公告)号：US20070062270A1

公开(公告)日：2007-03-22

申请号：US11458565

申请日：2006-07-19

申请人： Ashutosh Misra ,  Benjamin Jurcik ,  Ravi Laxman

发明人： Ashutosh Misra ,  Benjamin Jurcik ,  Ravi Laxman

IPC分类号： G01F17/00

CPC分类号： G01G23/3728 ,  G01G17/04

摘要： A chemical storage device and a method for monitoring chemical usage are described herein. The device and disclosed method utilize a chemical storage canister and a load cell integrated into one transportable unit. The load cell is capable of compensating for the added weight of attached dispensing devices used in the semiconductor industry. Additionally, the load cell continuously displays the weight of the chemicals as they are withdrawn from the chemical storage device. These functionalities are included in the control logic of the load cell which is incorporated into the load cell itself.

摘要翻译： 本文描述了一种用于监测化学品用途的化学储存装置和方法。 该装置和公开的方法利用集成到一个可运输单元中的化学储存罐和负载单元。 称重传感器能够补偿在半导体工业中使用的附加分配装置的附加重量。 此外，当从化学品存储装置中取出化学品时，称重传感器连续地显示化学品的重量。 这些功能包括在负载传感器本身中的负载传感器的控制逻辑中。

公开(公告)号：US08227358B2

公开(公告)日：2012-07-24

申请号：US13073112

申请日：2011-03-28

申请人： Ziyun Wang ,  Ashutosh Misra ,  Ravi Laxman

发明人： Ziyun Wang ,  Ashutosh Misra ,  Ravi Laxman

IPC分类号： H01L21/31 ,  H01L21/469 ,  C23C10/06

CPC分类号： C07F7/10 ,  C07F7/0838

摘要： Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazine group, wherein X1, X2, X3, and X4 may be the same or different from one another.

摘要翻译： 本文描述了用于低温沉积硅膜的新型硅前体。 所公开的前体具有低的汽化温度，优选小于约500℃。此外，硅前体的实施方案包含-Si-Y-Si-键，其中Y可以包含氨基，取代或未取代的烃基， 或氧气。 在一个实施方案中，硅前体具有下式：其中Y是烃基，取代的烃基，氧或氨基; R 1，R 2，R 3和R 4各自独立地为氢基，烃基，取代的烃基，杂烃基，其中R 1，R 2，R 3和R 4可以彼此相同或不同; X 1，X 2，X 3和X 4各自独立地为氢，烃基，取代的烃基或肼基，其中X 1，X 2，X 3和X 4可以彼此相同或不同。

公开(公告)号：US08101788B2

公开(公告)日：2012-01-24

申请号：US11695379

申请日：2007-04-02

申请人： Ziyun Wang ,  Ashutosh Misra ,  Ravi Laxman

发明人： Ziyun Wang ,  Ashutosh Misra ,  Ravi Laxman

IPC分类号： C07F7/04 ,  C07F7/08 ,  C07F7/10

CPC分类号： C07F7/10 ,  C07F7/0838

摘要： Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazino group, wherein X1, X2, X3, and X4 may be the same or different from one another.

摘要翻译： 本文描述了用于低温沉积硅膜的新型硅前体。 所公开的前体具有低的汽化温度，优选小于约500℃。此外，硅前体的实施方案包含-Si-Y-Si-键，其中Y可以包含氨基，取代或未取代的烃基， 或氧气。 在一个实施方案中，硅前体具有下式：其中Y是烃基，取代的烃基，氧或氨基; R 1，R 2，R 3和R 4各自独立地为氢基，烃基，取代的烃基，杂烃基，其中R 1，R 2，R 3和R 4可以彼此相同或不同; X 1，X 2，X 3和X 4各自独立地为氢原子，烃基，取代烃基或肼基，其中X 1，X 2，X 3和X 4可以彼此相同或不同。

公开(公告)号：US20110171381A1

公开(公告)日：2011-07-14

申请号：US13073112

申请日：2011-03-28

申请人： Ziyun WANG ,  Ashutosh Misra ,  Ravi Laxman

发明人： Ziyun WANG ,  Ashutosh Misra ,  Ravi Laxman

IPC分类号： C23C16/448 ,  C23C16/34 ,  C23C16/40

CPC分类号： C07F7/10 ,  C07F7/0838

摘要： Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazine group, wherein X1, X2, X3, and X4 may be the same or different from one another.

摘要翻译： 本文描述了用于低温沉积硅膜的新型硅前体。 所公开的前体具有低的汽化温度，优选小于约500℃。此外，硅前体的实施方案包含-Si-Y-Si-键，其中Y可以包含氨基，取代或未取代的烃基， 或氧气。 在一个实施方案中，硅前体具有下式：其中Y是烃基，取代的烃基，氧或氨基; R 1，R 2，R 3和R 4各自独立地为氢基，烃基，取代的烃基，杂烃基，其中R 1，R 2，R 3和R 4可以彼此相同或不同; X 1，X 2，X 3和X 4各自独立地为氢，烃基，取代的烃基或肼基，其中X 1，X 2，X 3和X 4可以彼此相同或不同。

公开(公告)号：US20080081106A1

公开(公告)日：2008-04-03

申请号：US11695379

申请日：2007-04-02

申请人： Ziyun Wang ,  Ashutosh Misra ,  Ravi Laxman

发明人： Ziyun Wang ,  Ashutosh Misra ,  Ravi Laxman

IPC分类号： B05D5/12 ,  C07F7/02

CPC分类号： C07F7/10 ,  C07F7/0838

摘要： Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazino group, wherein X1, X2, X3, and X4 may be the same or different from one another.

摘要翻译： 本文描述了用于低温沉积硅膜的新型硅前体。 所公开的前体具有低的汽化温度，优选小于约500℃。此外，硅前体的实施方案包含-Si-Y-Si-键，其中Y可以包含氨基，取代或未取代的烃基， 或氧气。 在一个实施方案中，硅前体具有下式：其中Y是烃基，取代的烃基，氧或氨基; R 1，R 2，R 3和R 4各自独立地为氢基团，烃基基团 ，取代的烃基，杂烃基，其中R 1，R 2，R 3和R 4都是 >可以相同或不同; X 1，X 2，X 3和X 4各自独立地为氢，烃基 基团，取代的烃基或肼基，其中X 1，X 2，X 3和X 4， / SUB>可以相同或不同。

公开(公告)号：US20120153048A1

公开(公告)日：2012-06-21

申请号：US13398814

申请日：2012-02-16

申请人： John N. Gregg ,  Scott L. Battle ,  Jeffrey I. Banton ,  Donn K. Naito ,  Ravi Laxman

发明人： John N. Gregg ,  Scott L. Battle ,  Jeffrey I. Banton ,  Donn K. Naito ,  Ravi Laxman

IPC分类号： B05B7/26

CPC分类号： C23C16/4483 ,  C23C16/4408 ,  C23C16/4481 ,  C23C16/45544 ,  C23C16/50 ,  F17C3/00 ,  F17C3/02 ,  F17C11/00 ,  F17C2203/03 ,  Y02E60/321 ,  Y10S261/65

摘要： Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an ampoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer.

摘要翻译： 可汽化材料支撑在容器内以促进引入的气体与可蒸发材料的接触，并产生包括蒸发材料的产物气体。 加热元件向容器的壁提供热量以加热设置在其中的可蒸发材料。 容器可以包括具有可移除顶部的安瓿。 限定多个材料支撑表面的多个容器可以堆放在与容器热连通的容器内。 管可以设置在容器内并且联接到气体入口。 可以进一步提供过滤器，流量计和液位传感器。 由引入的气体与汽化材料的接触产生的产物气体可以被输送到原子层沉积（ALD）或类似的工艺设备。 包含固体的源材料的至少一部分可以溶解在溶剂中，然后除去溶剂以产生设置在蒸发器内的源材料（例如，金属络合物）。

公开(公告)号：US20090136668A1

公开(公告)日：2009-05-28

申请号：US12358723

申请日：2009-01-23

申请人： John N. Gregg ,  Scott L. Battle ,  Jeffrey I. Banton ,  Donn K. Naito ,  Ravi Laxman

发明人： John N. Gregg ,  Scott L. Battle ,  Jeffrey I. Banton ,  Donn K. Naito ,  Ravi Laxman

IPC分类号： C23C16/44 ,  C23C16/54

CPC分类号： C23C16/4483 ,  C23C16/4408 ,  C23C16/4481 ,  C23C16/45544 ,  C23C16/50 ,  F17C3/00 ,  F17C3/02 ,  F17C11/00 ,  F17C2203/03 ,  Y02E60/321 ,  Y10S261/65

摘要： Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may comprise an amoule having a removable top. Multiple containers defining multiple material support surfaces may be stacked disposed within a vessel in thermal communication with the vessel. A tube may be disposed within the vessel and coupled to a gas inlet. Filters, flow meters, and level sensors may be further provided. Product gas resulting from contact of introduced gas with vaporized material may be delivered to atomic layer deposition (ALD) or similar process equipment. At least a portion of source material including a solid may be dissolved in a solvent, followed by removal of solvent to yield source material (e.g., a metal complex) disposed within the vaporizer.

摘要翻译： 可汽化材料支撑在容器内以促进引入的气体与可蒸发材料的接触，并产生包括蒸发材料的产物气体。 加热元件向容器的壁提供热量以加热设置在其中的可蒸发材料。 容器可以包括具有可移除顶部的阿姆空。 限定多个材料支撑表面的多个容器可以堆放在与容器热连通的容器内。 管可以设置在容器内并且联接到气体入口。 可以进一步提供过滤器，流量计和液位传感器。 由引入的气体与汽化材料的接触产生的产物气体可以被输送到原子层沉积（ALD）或类似的工艺设备。 包含固体的源材料的至少一部分可以溶解在溶剂中，然后除去溶剂以产生设置在蒸发器内的源材料（例如，金属络合物）。