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    Method for producing silicon nitride films and silicon oxynitride films by chemical vapor deposition
    3.
    发明申请
    Method for producing silicon nitride films and silicon oxynitride films by chemical vapor deposition 审中-公开
    通过化学气相沉积法生产氮化硅膜和氧氮化硅膜的方法

    公开(公告)号：US20070160774A1

    公开(公告)日：2007-07-12

    申请号：US10587427

    申请日：2005-01-19

    申请人： Eri Tsukada ,  Christian Dussarrat ,  Jean-Marc Girard

    发明人： Eri Tsukada ,  Christian Dussarrat ,  Jean-Marc Girard

    IPC分类号： H05H1/24 ,  H01L21/31

    CPC分类号： C23C16/308 ,  C23C16/34 ,  C23C16/345 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02271

    摘要： To provide a CVD-based method for the relatively low temperature production of silicon nitride films and silicon oxynitride films that exhibit excellent film properties wherein said method is not accompanied by the production of ammonium chloride. Gaseous aminosilane such as tris(isopropylamino)silane and a gaseous hydrazine compound such as dimethylhydrazine are fed into a chemical vapor deposition reaction chamber that holds at least one substrate and silicon nitride film is formed on the substrate by reacting the two gases in said chemical vapor deposition reaction chamber.

    摘要翻译： 为了提供用于相对低温生产氮化硅膜和氧氮化硅膜的基于CVD的方法，其表现出优异的膜性质，其中所述方法不伴随氯化铵的生产。 将气态氨基硅烷如三（异丙基氨基）硅烷和气态肼化合物如二甲基肼进料到化学气相沉积反应室中，所述化学气相沉积反应室保持至少一个基底，并且通过使所述化学气体中的两种气体反应在基底上形成氮化硅膜 沉积反应室。

    METHOD OF FORMING SILICON OXIDE CONTAINING FILMS
    5.
    发明申请
    METHOD OF FORMING SILICON OXIDE CONTAINING FILMS 有权
    形成含氧化硅膜的方法

    公开(公告)号：US20090232985A1

    公开(公告)日：2009-09-17

    申请号：US11908707

    申请日：2006-03-17

    申请人： Christian Dussarrat ,  Julien Gatineau ,  Kazutaka Yanagita ,  Eri Tsukada ,  Ikuo Suzuki

    发明人： Christian Dussarrat ,  Julien Gatineau ,  Kazutaka Yanagita ,  Eri Tsukada ,  Ikuo Suzuki

    IPC分类号： C23C16/40 ,  C23C16/455

    CPC分类号： H01L21/02164 ,  C23C16/402 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/31612

    摘要： A method of forming a silicon oxide film, comprising the steps of: —providing a treatment substrate within a reaction chamber; —purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 4000 C, —adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, —purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, —at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and—repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate.

    摘要翻译： 一种形成氧化硅膜的方法，包括以下步骤： - 在反应室内提供处理衬底; 通过在50至4000℃的基板温度下在减压下将惰性气体进料到反应室中，在相同的温度和减压下，通过脉冲式在处理基板上吸收硅化合物 将气态硅化合物引入反应室中，在相同的温度和减压下，用惰性气体在相同的温度和减压下，将反应室中的未吸附的硅化合物， 含臭氧的混合气体进入反应室，并与吸附在处理基板上的硅化合物进行氧化反应而生成氧化硅; 并重复步骤1）至4），如果需要在基底上获得所需的厚度。

    Method of forming silicon oxide containing films
    6.
    发明授权
    Method of forming silicon oxide containing films 有权
    形成含氧化硅膜的方法

    公开(公告)号：US08613976B2

    公开(公告)日：2013-12-24

    申请号：US13547876

    申请日：2012-07-12

    申请人： Christian Dussarrat ,  Ikuo Suzuki ,  Kazutaka Yanagita ,  Julien Gatineau ,  Eri Tsukada

    发明人： Christian Dussarrat ,  Ikuo Suzuki ,  Kazutaka Yanagita ,  Julien Gatineau ,  Eri Tsukada

    IPC分类号： C23C16/40 ,  C23C16/455

    CPC分类号： H01L21/02164 ,  C23C16/402 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/31612

    摘要： A method of forming a silicon oxide film, comprising the steps of: providing a substrate into a reaction chamber; injecting into the reaction chamber at least one silicon containing compound where the at least one silicon containing compound is bis(diethylamino)silane; injecting Oxygen into the reaction chamber and at least one other O-containing gas selected from ozone and water; reacting in the reaction chamber by chemical vapor deposition at a temperature below 400 C the at least one silicon containing compound and the at least one oxygen containing gas in order to obtain the silicon oxide film deposited onto the substrate.

    摘要翻译： 一种形成氧化硅膜的方法，包括以下步骤：将基底提供到反应室中; 向所述反应室中注入至少一种含硅化合物，其中所述至少一种含硅化合物是双（二乙基氨基）硅烷; 将氧气注入反应室和至少一种其它选自臭氧和水的含O气体; 在反应室内通过化学气相沉积在低于400℃的温度下使至少一种含硅化合物和至少一种含氧气体反应，以获得沉积在基底上的氧化硅膜。

    METHOD OF FORMING SILICON OXIDE CONTAINING FILMS
    7.
    发明申请
    METHOD OF FORMING SILICON OXIDE CONTAINING FILMS 有权
    形成含氧化硅膜的方法

    公开(公告)号：US20120276292A1

    公开(公告)日：2012-11-01

    申请号：US13547876

    申请日：2012-07-12

    申请人： Christian DUSSARRAT ,  Julien Gatineau ,  Kazutaka Yanagita ,  Eri Tsukada ,  Ikuo Suzuki

    发明人： Christian DUSSARRAT ,  Julien Gatineau ,  Kazutaka Yanagita ,  Eri Tsukada ,  Ikuo Suzuki

    IPC分类号： C23C16/40

    CPC分类号： H01L21/02164 ,  C23C16/402 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/31612

    摘要： A method of forming a silicon oxide film, comprising the steps of: providing a substrate into a reaction chamber; injecting into the reaction chamber at least one silicon containing compound where the at least one silicon containing compound is bis(diethylamino)silane; injecting Oxygen into the reaction chamber and at least one other O-containing gas selected from ozone and water; reacting in the reaction chamber by chemical vapor deposition at a temperature below 400 C the at least one silicon containing compound and the at least one oxygen containing gas in order to obtain the silicon oxide film deposited onto the substrate.

    摘要翻译： 一种形成氧化硅膜的方法，包括以下步骤：将基底提供到反应室中; 向所述反应室中注入至少一种含硅化合物，其中所述至少一种含硅化合物是双（二乙基氨基）硅烷; 将氧气注入反应室和至少一种其它选自臭氧和水的含O气体; 在反应室内通过化学气相沉积在低于400℃的温度下使至少一种含硅化合物和至少一种含氧气体反应，以获得沉积在基底上的氧化硅膜。

    Method of forming silicon oxide containing films
    8.
    发明授权
    Method of forming silicon oxide containing films 有权
    形成含氧化硅膜的方法

    公开(公告)号：US08227032B2

    公开(公告)日：2012-07-24

    申请号：US11908707

    申请日：2006-03-17

    申请人： Christian Dussarrat ,  Julien Gatineau ,  Kazutaka Yanagita ,  Eri Tsukada ,  Ikuo Suzuki

    发明人： Christian Dussarrat ,  Julien Gatineau ,  Kazutaka Yanagita ,  Eri Tsukada ,  Ikuo Suzuki

    IPC分类号： C23C16/40 ,  C23C16/455

    CPC分类号： H01L21/02164 ,  C23C16/402 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/0228 ,  H01L21/31612

    摘要： A method of forming a silicon oxide film, comprising the steps of: —providing a treatment substrate within a reaction chamber; —purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 400 C, —adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, —purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, —at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and—repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate.

    摘要翻译： 一种形成氧化硅膜的方法，包括以下步骤： - 在反应室内提供处理衬底; 通过在50至400℃的基板温度下在减压下将惰性气体进料到反应室内，在相同的温度和减压下通过脉冲式在处理基板上吸收硅化合物 将气态硅化合物引入反应室中，在相同的温度和减压下，用惰性气体在相同的温度和减压下，将反应室中的未吸附的硅化合物， 含臭氧的混合气体进入反应室，并与吸附在处理基板上的硅化合物进行氧化反应而生成氧化硅; 并重复步骤1）至4），如果需要在基底上获得所需的厚度。

    Process for producing trifluoromethylbenzylamines
    9.
    发明授权
    Process for producing trifluoromethylbenzylamines 失效
    制备三氟甲基苄胺的方法

    公开(公告)号：US06175041B1

    公开(公告)日：2001-01-16

    申请号：US09521009

    申请日：2000-03-07

    申请人： Seiji Takasaki ,  Takahiro Koizumi ,  Takashi Kume ,  Michio Ishida ,  Satoru Narizuka ,  Eri Tsukada

    发明人： Seiji Takasaki ,  Takahiro Koizumi ,  Takashi Kume ,  Michio Ishida ,  Satoru Narizuka ,  Eri Tsukada

    IPC分类号： C07C20900

    CPC分类号： C07C209/48 ,  C07C211/29

    摘要： The invention relates to a process for producing a trifluoromethylbenzylamine represented by the following general formula (1). This process includes hydrogenating a trifliuoromethylbenzonitrile represented by the following general formula (2) by hydrogen in an organic solvent in the presence of ammonia, using a Raney catalyst, where each R independently represents a halogen selected from the group consisting of fluorine, chlorine, bromine and iodine, an alkyl group having a carbon atom number of 1-4, an alkoxy group having a carbon atom number of 1-4, an amino group, a hydroxyl group or a trifluoromethyl group, and n represents an integer from 0 to 4, where R and n are defined as above. With this process, it is possible to obtain the trifluoromethylbenzylamine easily and inexpensively at an extremely high yield.

    摘要翻译： 本发明涉及一种由以下通式（1）表示的三氟甲基苄胺的制备方法。 该方法包括使用阮内催化剂，在氨的存在下，在有机溶剂中，用氢气氢化由以下通式（2）表示的三氟甲基苄腈，其中每个R独立地表示选自氟，氯，溴的卤素 和碘，碳原子数为1-4的烷基，碳原子数为1-4的烷氧基，氨基，羟基或三氟甲基，n为0-4的整数 其中R和n如上定义。 通过该方法，可以以极高的收率容易且廉价地得到三氟甲基苄基胺。

    Process for producing trifluoromethylbenzylamines
    10.
    发明授权
    Process for producing trifluoromethylbenzylamines 失效
    制备三氟甲基苄胺的方法

    公开(公告)号：US06376712B2

    公开(公告)日：2002-04-23

    申请号：US09833211

    申请日：2001-04-12

    申请人： Satoru Narizuka ,  Eri Tsukada ,  Takashi Kume

    发明人： Satoru Narizuka ,  Eri Tsukada ,  Takashi Kume

    IPC分类号： C07C21100

    CPC分类号： C07C209/40 ,  C07C211/29

    摘要： The present invention relates to a process for producing a trifluoromethylbenzylamine represented by the general formula (1), where R1 represents hydrogen atom, a halogen atom selected from the group consisting of fluorine, chlorine, bromine and iodine, or trifluoromethyl group. This process includes the step of reducing an oxime by hydrogen in an organic solvent in the presence of a catalyst and ammonia. The oxime is represented by the general formula (2), where R1 is defined as above, and R2 represents hydrogen atom, an alkyl group or an aralkyl group. With this process, the trifluoromethylbenzylamine can be produced with high yield.

    摘要翻译： 本发明涉及由通式（1）表示的三氟甲基苄胺的制备方法，其中R1表示氢原子，选自氟，氯，溴和碘的卤素原子或三氟甲基。 该方法包括在催化剂和氨的存在下，通过有机溶剂中的氢还原肟的步骤。 肟由通式（2）表示，其中R 1如上定义，R 2表示氢原子，烷基或芳烷基。 通过该方法，可以高产率制备三氟甲基苄胺。